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A kind of method of dry cleaning germanium wafer

A dry cleaning, wafer technology, applied in cleaning methods and utensils, chemical instruments and methods, sustainable manufacturing/processing, etc., can solve the problems of difficult surface state of germanium, application limitations, etc.

Active Publication Date: 2022-05-20
BEIJING TONGMEI XTAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, because germanium oxide is very soluble in water, the surface state of germanium is extremely difficult to control, which limits its application in electronic devices.

Method used

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  • A kind of method of dry cleaning germanium wafer
  • A kind of method of dry cleaning germanium wafer
  • A kind of method of dry cleaning germanium wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～3 and comparative example 1～2

[0050] Example 1 provides a method of dry cleaning germanium wafers, comprising the following steps:

[0051] (1) The degree of vacuum is 2×10 -3 The vacuum mixing chamber of Pa is respectively injected into the nitrogen plasma and helium plasma to obtain the mixed plasma; wherein the penetration rate of the nitrogen plasma into the vacuum mixing chamber is 40mL / min, the passage rate of helium plasma into the vacuum mixing chamber is 4.0mL / min, and the ratio of the penetration volume of the nitrogen plasma into the vacuum mixing chamber and the volume of the helium plasma into the vacuum mixing chamber is 1:0.1;

[0052] (2) Place the germanium wafer in a vacuum of 2×10 -3 Pa in the vacuum cleaning chamber and heated up to 300 ° C; after that, to the vacuum cleaning chamber into the mixed plasma, the mixed plasma to clean the germanium wafer and passivate the surface of the germanium wafer; the mixed plasma into the vacuum cleaning chamber penetration rate of 75mL / min, the acces...

Embodiment 4～5 and comparative example 3～5

[0063] Compared with Example 2, the difference between Examples 4 to 5 and the proportional ratio 3 to 5 is that the temperature of the vacuum cleaning chamber in step (2) is different. Wherein, the specific parameters of step (2) in the proportion of 3 to 5 and the polishing surface of the germanium wafer are shown in Table 2.

[0064] Table 2 Embodiment 4 to 5 and the specific parameters of the proportional step (2) of the ratio 3 to 5 and the detection results of the polished surface of the germanium wafer

[0065]

[0066] Combined with Table 1 and Table 2, it can be seen that the present application by controlling the temperature of the vacuum cleaning chamber in step (2) to affect the cleaning effect of the polishing surface of the germanium wafer, and the temperature of the vacuum cleaning chamber is controlled in the range of 280 ~ 320 ° C, the cleaning effect of the polishing surface of the germanium wafer can be improved; wherein the temperature of the vacuum cleaning ...

Embodiment 6～10

[0068] Compared with Example 2, the difference between Examples 6 to 10 is that the mixed plasma is passed into the vacuum cleaning chamber in step (2) at a different rate. Wherein, the specific parameters of step (2) in Example 6 to 10 and the detection results of the polishing surface of the germanium wafer are shown in Table 3.

[0069] Table 3 The specific parameters of step (2) in Example 6 to 10 and the detection results of the polishing surface of the germanium wafer

[0070]

[0071] As can be seen from the combination of Table 1 and Table 3, the present application by mixing plasma into the vacuum cleaning chamber in step (2) to affect the cleaning effect of the polishing surface of the germanium wafer; wherein the mixed plasma into the vacuum cleaning chamber in step (2) is controlled at a rate of 70 to 80 mL / min, the cleaning effect of the polishing surface of the germanium wafer is better.

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Abstract

The present application relates to the technical field of processing semiconductor materials, and specifically discloses a method for dry-cleaning germanium wafers. The method includes the following steps: (1) feeding nitrogen plasma and helium plasma respectively into a vacuum mixing chamber, Obtain mixed plasma; Wherein, the ratio of the feed volume of the nitrogen plasma into the vacuum mixing chamber and the helium plasma into the vacuum mixing chamber is 1:(0.1~0.2 ); (2) placing the germanium wafer in a vacuum cleaning chamber and heating it up to 280-320° C.; after that, introducing the mixed plasma into the vacuum cleaning chamber, and the mixed plasma performs a process on the germanium wafer cleaning and passivating the surface of the germanium wafer; (3) cooling down to 20-30°C. The application can effectively remove the pollution on the surface of the germanium wafer and passivate the surface of the germanium wafer.

Description

Technical field [0001] The present application relates to the field of semiconductor material processing technology, more specifically, it relates to a dry cleaning of germanium wafers. Background [0002] Germanium (Ge) is an important indirect transition semiconductor material that is widely used in the aerospace field. Compared with the traditional silicon and gallium arsenide substrate epitaxial solar cells, germanium monocrystalline substrate epitaxy gallium arsenide solar cells have the advantages of high temperature resistance, strong resistance to space radiation, high photoelectric conversion efficiency, strong reliability and long life. [0003] The crystal structure of germanium single crystal is a cubic structure, and the germanium atoms located inside the germanium single crystal are bound by four covalent bonds, and the chemical properties are relatively stable; however, the germanium atoms located on the surface of the germanium single crystal are in an unsaturated...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L21/02B08B7/00
CPCY02P70/50
Inventor 史铎鹏任殿胜
Owner BEIJING TONGMEI XTAL TECH CO LTD
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