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Electron transport material, preparation method and photoelectric device

A technology for electron transport materials and optoelectronic devices, which can be used in electric solid devices, electrical components, semiconductor devices, etc., and can solve the problems of poor electrical conductivity and electron transport properties of nano-ZnO semiconductor materials.

Pending Publication Date: 2022-04-22
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of this application is to provide an electron transport material, its preparation method and optoelectronic device, aiming to solve the problem of poor electrical conductivity and electron transport property of the existing nano-ZnO semiconductor material to a certain extent

Method used

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  • Electron transport material, preparation method and photoelectric device
  • Electron transport material, preparation method and photoelectric device
  • Electron transport material, preparation method and photoelectric device

Examples

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preparation example Construction

[0029] as attached figure 1 As shown, the second aspect of the embodiment of the present application provides a method for preparing an electron transport material, comprising the following steps:

[0030] S10. Obtain zinc oxide nanomaterials;

[0031] S20. Obtain the first zirconium salt, dissolve the first zirconium salt and the zinc oxide nanomaterial in the first organic solvent, add the first basic substance to react, and obtain the electron transport material.

[0032] The preparation method of the electron transport material provided by the second aspect of the application comprises dissolving the first zirconium salt and the zinc oxide nanomaterial in the first organic solvent, adding the first basic substance to react, and passing the first zirconium salt in the basic solution The reaction produces zirconium hydroxide (Zr(OH) 4 ), then Zr(OH) 4 Polycondensation reaction occurs, dehydration generates ZrO on the surface of zinc oxide nanoparticles 2The shell layer, ...

Embodiment 1

[0088] An electron transport thin film, comprising the following preparation steps:

[0089] ① First, add an appropriate amount of zinc acetate to 50ml of ethanol to form a solution with a total concentration of 0.5M. Then stir and dissolve at 70°C, add potassium hydroxide dissolved in 10ml ethanol lye (molar ratio, OH - : Zn 2+ =1.8:1, pH=12). Stirring was continued at 70 °C for 3 h to obtain a homogeneous clear solution. Subsequently, after the solution was cooled, it was precipitated with ethyl acetate, and after centrifugation, it was dissolved with a small amount of ethanol (repeated operation, washing 3 times) to obtain ZnO nanoparticles.

[0090] ② Add ZnO nanoparticles and appropriate amount of zirconium sulfate to 30ml ethanol to form a solution with a total concentration of 0.5M, in which the molar ratio of zinc:zirconium is 1:0.1. Then stir and dissolve at 70°C, add potassium hydroxide dissolved in 5ml ethanol lye (molar ratio, OH - : Zr 4+ =3.8:1, pH=12). Co...

Embodiment 2

[0093] An electron transport thin film, the difference between it and Example 1 is that the molar ratio of zinc: zirconium in step ② is 1:0.3, and the obtained ZnO / ZrO 2 ZrO in core-shell nanomaterials 2 The thickness of the core shell is 3 nm.

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Abstract

The invention belongs to the technical field of photoelectric devices, and particularly relates to an electron transport material which is of a core-shell structure and comprises a ZnO core and a ZrO2 shell layer coating the ZnO core. The electron transport material has the core-shell structure and the wide-band gap semiconductor ZrO2 shell layer, so that the stability of the core-shell structure nanocrystalline composite material can be improved, and electron transport is facilitated. Meanwhile, when the electron transport material is applied to a photoelectric device, a wide band gap of ZrO2 can effectively prevent holes from being transmitted to an anode from a light-emitting layer, so that electrons and the holes have higher recombination efficiency in the light-emitting layer. Moreover, the ZrO2 shell layer can fill up oxygen vacancies on the surface of ZnO and reduce the oxygen vacancies on the surface of ZnO, so that formation of oxygen vacancies on the surface of ZnO is reduced, radiation combination of electron hole pairs is reduced, the electron transmission performance is improved, and the luminous efficiency of the device is enhanced.

Description

technical field [0001] The application belongs to the technical field of optoelectronic devices, and in particular relates to electron transport materials, their preparation methods and optoelectronic devices. Background technique [0002] Semiconductor quantum dots have a quantum size effect, and people can achieve the required specific wavelength of light by adjusting the size of the quantum dots. In traditional inorganic electroluminescent devices, electrons and holes are injected from the cathode and anode respectively, and then recombine in the light-emitting layer to form excitons to emit light. [0003] In recent years, the use of inorganic semiconductors as electron transport layers has become a relatively hot research topic. Nano ZnO, TiO 2 , ZrO 2 It is a wide-bandgap semiconductor material. Due to its advantages such as quantum confinement effect, size effect and superior fluorescence characteristics, it has shown great promise in the fields of photocatalysis, ...

Claims

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Application Information

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IPC IPC(8): H01L51/54H01L51/56H01L51/50B82Y30/00
CPCB82Y30/00H10K50/115H10K50/16H10K2102/00H10K71/00
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION
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