Method for rapidly preparing (100) single crystal copper

A single crystal copper, rapid technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of complexity, large thermal damage, low quality of single crystal, etc., to reduce process temperature, thermal damage Small, the effect of reducing process time
CN114411233AActive Publication Date: 2022-04-29DALIAN UNIV OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
DALIAN UNIV OF TECH
Publication Date
2022-04-29

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Abstract

The invention provides a method for rapidly preparing (100) single crystal copper, which comprises the following steps of: annealing a (111) preferred orientation nano twin crystal Cu film, applying an electric field to the (111) preferred orientation nano twin crystal Cu film and keeping for a certain time, so that crystal grains of the (111) preferred orientation nano twin crystal Cu film grow rapidly, and finally converting the (111) preferred orientation nano twin crystal Cu into (100) preferred orientation single crystal Cu. According to the method, the production efficiency of the single crystal Cu is remarkably improved, the large-grain-size single crystal Cu with (100) preferred orientation is prepared, and the large-grain-size single crystal Cu has the advantages of being excellent in mechanical property, oxidation resistance, electromigration resistance, thermal stability and the like. The preparation method of the (100) single crystal copper is simple, efficient, low in cost, good in compatibility with an existing microelectronic packaging process and very suitable for large-scale industrial production.
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Description

technical field

[0001] The invention relates to the technical field of microelectronics manufacturing, in particular to a method for rapidly preparing (100) single crystal copper. Background technique

[0002] Copper (Cu) is currently the most widely used conductor material in microelectronic packaging technology. It is used in Under Bump Metallization (UBM), Redistribution Layer (RDL), on-chip wiring and wires. Wait. With the development of semiconductor technology, microelectronic packaging technology continues to develop in the direction of miniaturization, and advanced three-dimensional system-in-package puts forward new requirements for the Cu interconnect materials used. As the size shrinks and the density increases, the current density in the microelectronic packaging structure increases, the heat dissipation capacity is weakened, and electromigration failure and high temperature failure are more likely to occur; at the same time, as the size of the bump shrinks, the...

Claims

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