Method for rapidly preparing (100) single crystal copper

A single crystal copper, rapid technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of complexity, large thermal damage, low quality of single crystal, etc., to reduce process temperature, thermal damage Small, the effect of reducing process time

Active Publication Date: 2022-04-29
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] According to the above-mentioned technical problems such as the complexity of the single crystal Cu preparation method in the existing microelectronic packaging technology, the low quality of the manufactured single crystal, and the large thermal damage, a method for rapidly preparing (100) single crystal copper is provided.

Method used

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  • Method for rapidly preparing (100) single crystal copper
  • Method for rapidly preparing (100) single crystal copper
  • Method for rapidly preparing (100) single crystal copper

Examples

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Embodiment 1

[0050] like image 3 Shown, a kind of fast preparation method of (100) single-crystal copper of the present invention can be realized by following specific processing steps:

[0051] Step 1: provide a nano-twinned Cu 20 (such as figure 1 and figure 2 As shown), it has a high-density twin boundary, the grains are columnar and have a (111) preferred orientation, and the average diameter of the columnar grains is 8 μm. The nano-twinned Cu is prepared on the substrate 10 by direct current or pulse electroplating, and the substrate is rolled polycrystalline Cu. The thickness of the nano-twinned Cu is 30 μm.

[0052] Step 2: Using the nano-twinned Cu described in Step 1 as a UBM to form a metallurgical connection with the UBM 40 on the other side with the solder 30 to form an assembly, and then connect the assembly to a current source to form a complete path.

[0053] Step 3: heating the assembly described in step 2 to 225° C., and applying a direct current to the nano-twinned ...

Embodiment 2

[0056] like Figure 4 Shown, a kind of fast preparation method of (100) single-crystal copper of the present invention can be realized by following specific processing steps:

[0057] Step 1: Provide a nano-twinned Cu 20, which has a high-density twin boundary, the crystal grains are columnar and have a preferred orientation of (111), and the average diameter of the columnar crystals is 8 μm. The nano-twinned Cu is prepared on the substrate 10 by direct current or pulse electroplating, and its shape is strip. The thickness of the nano-twinned Cu is 30 μm.

[0058] Step 2: Connecting the nano-twinned Cu described in Step 1 with a current source to form a complete path.

[0059] Step 3: heating the nano-twinned Cu connected with the wires in step 2 to 160° C., and applying a pulse current to the nano-twinned Cu at the same time, T on / T off is 1, and the frequency is 200 Hz, so that the current density passing through the nano-twinned Cu is 1×10 5 A / cm 2 , and the current ...

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Abstract

The invention provides a method for rapidly preparing (100) single crystal copper, which comprises the following steps of: annealing a (111) preferred orientation nano twin crystal Cu film, applying an electric field to the (111) preferred orientation nano twin crystal Cu film and keeping for a certain time, so that crystal grains of the (111) preferred orientation nano twin crystal Cu film grow rapidly, and finally converting the (111) preferred orientation nano twin crystal Cu into (100) preferred orientation single crystal Cu. According to the method, the production efficiency of the single crystal Cu is remarkably improved, the large-grain-size single crystal Cu with (100) preferred orientation is prepared, and the large-grain-size single crystal Cu has the advantages of being excellent in mechanical property, oxidation resistance, electromigration resistance, thermal stability and the like. The preparation method of the (100) single crystal copper is simple, efficient, low in cost, good in compatibility with an existing microelectronic packaging process and very suitable for large-scale industrial production.

Description

technical field [0001] The invention relates to the technical field of microelectronics manufacturing, in particular to a method for rapidly preparing (100) single crystal copper. Background technique [0002] Copper (Cu) is currently the most widely used conductor material in microelectronic packaging technology. It is used in Under Bump Metallization (UBM), Redistribution Layer (RDL), on-chip wiring and wires. Wait. With the development of semiconductor technology, microelectronic packaging technology continues to develop in the direction of miniaturization, and advanced three-dimensional system-in-package puts forward new requirements for the Cu interconnect materials used. As the size shrinks and the density increases, the current density in the microelectronic packaging structure increases, the heat dissipation capacity is weakened, and electromigration failure and high temperature failure are more likely to occur; at the same time, as the size of the bump shrinks, the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B1/02C30B30/02C30B29/02
CPCC30B1/02C30B30/02C30B29/02
Inventor 黄明亮张诗楠武洋詹莉昕黄斐斐任婧
Owner DALIAN UNIV OF TECH
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