Large-size ultra-pure vanadium sputtering target material for integrated circuit chip and preparation process thereof

Abstract

The invention belongs to the technical field of refractory metal vanadium sputtering target materials, and particularly relates to a large-size ultra-high-purity vanadium sputtering target material for an integrated circuit chip and a preparation technology thereof.The preparation technology comprises the following steps that S1, vanadium reacts with fluorine gas under the high-temperature condition, and a crude product vanadium pentafluoride is prepared; s2, purifying the crude product vanadium pentafluoride through a vacuum distillation method, an adsorption method and a metal reduction method to obtain high-purity vanadium pentafluoride; s3, reducing the high-purity vanadium pentafluoride into ultra-high-purity metal vanadium by adopting a chemical vapor deposition method; and S4, ultra-pure metal vanadium is deposited on the base material, and the large-size ultra-pure vanadium sputtering target material is produced through a one-step method. According to the ultra-high-purity vanadium sputtering target material manufactured through the method, fluorine gas diluted by high-purity nitrogen, high-purity vanadium powder and hydrogen reduction gas serve as raw materials and are completed in one step in specially-made chemical vapor deposition (CVD) equipment, the reaction process is continuous gas phase reaction, the consistency in all directions and the consistency between batches of products are far superior to those of a traditional vanadium target material, and therefore the ultra-high-purity vanadium sputtering target material is obtained. The purity of the prepared vanadium target material reaches 99.9999%.

Description

technical field [0001] The invention belongs to the technical field of refractory metal vanadium sputtering targets, and in particular relates to a large-size ultra-high-purity vanadium sputtering target for integrated circuit chips and a preparation process thereof. Background technique [0002] Vanadium metal targets are widely used in electronics and semiconductor fields, such as integrated circuits, semiconductor chips and other applications. Pure gold is generally used as the surface conductive layer in the production of integrated circuits, but gold and silicon wafers are prone to generate AuSi low-melting point compounds, resulting in weak bonding between gold and silicon interfaces. Adhesive layer, pure nickel is commonly used as the adhesive layer, but diffusion will also form between the nickel layer and the gold conductive layer, so a barrier layer is needed to prevent the diffusion between the gold conductive layer and the nickel adhesive layer. The barrier laye...

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Problems solved by technology

The size of the high-purity vanadium target is small, and its purity cannot meet the use of electronic-grade products, and smelting requires repeated operations, which is time-consuming, laborious and inefficient, and is difficult to use in industrial production

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