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Organic-inorganic tin/lead narrow-band-gap perovskite thin film and preparation method thereof

A narrow bandgap, perovskite technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as poor crystal quality, inconsistent film orientation, and decreased photocurrent, achieving fewer holes and good optoelectronic properties. , Improve the effect of photoelectric performance

Pending Publication Date: 2022-05-24
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When organic-inorganic tin / lead perovskite crystals are grown by conventional methods such as spin coating, scraping coating and vapor deposition, various ions in them self-assemble and crystallize through free movement, and the obtained organic-inorganic tin / lead perovskite crystals The orientation of the crystal cannot be precisely controlled, resulting in poor crystal quality, hole defects on the surface, smaller grains, more grain boundaries, and inconsistent film orientation, resulting in an increase in dark current, a decrease in photocurrent, and easier degradation, seriously affecting calcium Photoelectric Properties of TiO Thin Films

Method used

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  • Organic-inorganic tin/lead narrow-band-gap perovskite thin film and preparation method thereof
  • Organic-inorganic tin/lead narrow-band-gap perovskite thin film and preparation method thereof
  • Organic-inorganic tin/lead narrow-band-gap perovskite thin film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0037] 1. Take methylamine bromide (MABr, 0.475mmol), lead bromide (PbBr 2 , 0.675 mmol), dissolved in DMF / DMSO (400 μL / 50 μL) mixture, stirred at room temperature for 3 hours to give solution 1. Take formamidine hydroiodate (FAI, 0.73 mmol), methylamine chloride (MACl, 0.45 mmol), lead iodide (PbI 2 1.37 mmol), dissolved in DMF / DMSO (800 μL / 100 μL) mixture, stirred at room temperature for 3 hours to give solution 2. Solution 1 was added to solution 2, stirred at room temperature for 0.5 hours to give the precursor solution.

[0038] 2. The precursor solution is rotated to the substrate by spin coating method, and the rotation condition of the substrate during spin coating is: 1000 rpm in the first stage, the time is 10 seconds; the second stage is 5000 rpm, the time is 30 seconds. Add 40 μL of precursor solution dropwise during spin coating, and add 200 μL of chlorobenzene to the substrate coated with precursor solution dropwise at the 10th second of the second stage of rotation....

Embodiment 2

[0042] The organic - inorganic tin / lead perovskite crystallization method of Example 2 is substantially the same as That of Example 1, the difference is that the annealing temperature employed is 130 ° C, and the annealing time is 15 minutes.

[0043] From scanning electron microscopy Figure 3-4 It can be seen that the narrow band gap perovskite film cavity obtained after applying the magnetic field is reduced, and the grain size in the perovskite crystal becomes larger. There is still no crystallization of PbI in the unreformed perovskite film 2 ( Figure 3 circled out), while applying a magnetic field to the perovskite film ( Figure 4 PbI that was not involved in crystallization was not seen 2 。

Embodiment 3

[0045] 1. Take formamidine hydroiodate (FAI, 0.72 mmol) and lead iodide (PbI 2 , 1.25mmol), dissolved in DMF / DMSO (1mL, DMF:DMSO volume ratio of 4:1) mixed solution, stirred at room temperature for 3 hours to give precursor solution 1.

[0046] 2. Take methylamine iodide (MAI, 1mmol) and lead iodide (PbI 2 1mmol), dissolved in DMF / DMSO (0.8mL, volume specific to DMF:DMSO=4:1) mixed solution, stirred at room temperature for 3 hours to obtain precursor solution 2.

[0047] 3. Take methylamine bromide (MABr, 1 mmol) and lead bromide (PbBr 2 1mmol), dissolved in DMF / DMSO (0.8mL, volume specific to DMF: DMSO= 4:1) mixed solution, stirred at room temperature for 3 hours to obtain precursor solution 3.

[0048] 4. Take the precursor solution 1 (857 μL), the precursor solution 2 (143 μL) and the precursor solution 3 (200 μL), mix at room temperature and stir for 0.5 hours to give the precursor solution 4.

[0049] 5. The method of spin coating is used to spin coating the precursor solution...

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Abstract

The invention discloses an organic-inorganic tin / lead narrow-band-gap perovskite thin film and a preparation method thereof. The preparation method comprises the following steps: (1) depositing or attaching a lead source and / or a tin source, a methylamine source and / or a formamidine source to a substrate; and (2) applying an electric field or a magnetic field above the substrate, and simultaneously performing annealing treatment to obtain the organic-inorganic tin / lead narrow-band-gap perovskite thin film. The organic-inorganic tin / lead narrow-band-gap perovskite thin film prepared by the method provided by the invention has few holes, has an ordered perovskite crystal structure and a large grain size, has good photoelectric properties, and can further improve the photoelectric properties of devices.

Description

Technical field [0001] The present invention relates to the field of perovskite semiconductor crystallization technology, in particular to an organic - inorganic tin / lead narrow band gap perovskite film and preparation method thereof. Background [0002] Photodetectors are devices made based on the principle of photoelectric effect that convert incident light signals into electrical signals, and can intuitively analyze incident optical signals by reading and processing electrical signals. Fast and wide spectral response of light detectors in health monitoring, autonomous driving, machine vision and other fields have a wide range of applications, and the performance of the photoactive layer in the device plays a key role in the performance of the device. The active layer in the traditional light detector mostly uses inorganic semiconductor materials, such as Si, InGaAs, etc., and its preparation process requires a harsh high temperature and high vacuum environment, and the prepa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/46
CPCH10K71/12H10K71/40H10K85/30Y02E10/549
Inventor 朱璐梅路遥
Owner SUN YAT SEN UNIV