Thermal evaporation coating ceramic target material and preparation method thereof

A ceramic target and thermal evaporation technology, which is applied in the field of materials, can solve problems such as cracking, ceramic target cracking, and large thermal shock stress

Inactive Publication Date: 2022-05-31
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a technical solution to solve the problem of ceramic target cracking caused by excessive thermal shock stress during thermal evaporation
In the present invention, by adding ceramic fiber, ceramic sheet or a combination of the same material to the target raw material, the ceramic target body forms a heterogeneous structure after sintering, and solves the problem of ceramics without affecting the quality of the coating film. Excessive thermal shock stress during thermal evaporation of the target can easily cause cracking

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Indium tin oxide (ITO, In 2 O 3 / SnO 2 =90 / 10) powder as raw material to obtain mixed ITO powder (in which nano powder accounts for 15wt%). Nano ITO powder is prepared by electrospinning ITO ceramic fibers, cooled with liquid nitrogen and then crushed by mechanical vibration, and sieved with a 40-mesh sieve to obtain ceramic fibers with a length of 5-100 μm and a diameter of 0.2-2 μm. Weigh 50g of ceramic fiber and 450g of mixed ITO powder according to the addition amount of 10%, add 5% polyvinyl alcohol aqueous solution of pure substance to the mixed ITO powder, mix in a V-shaped mixer for 1 hour, and then add ceramic fiber to continue mixing 1h. 50g of the mixture was pressed into a green body with a diameter of 30mm and a relative density of 40%. The green body was first degreasing and degumming at 550 °C for 5 hours, and then sintered at a high temperature of 1500 °C for 2 hours. The sintering atmosphere was oxygen to obtain a porous ceramic target with a relati...

Embodiment 2

[0024] Indium tin oxide (ITO, In 2 O 3 / SnO 2 =90 / 10) powder as raw material to obtain mixed ITO powder (in which nano powder accounts for 30wt%). Nano ITO powder is prepared by wet spinning to prepare ITO ceramic fibers, which are cooled with liquid nitrogen and then mechanically vibrated and pulverized, and sieved with a 40-mesh sieve to obtain ceramic fibers with a length of 5-100 μm and a diameter of 0.5-6 μm. Weigh 50g ceramic fiber and 200g mixed ITO powder according to the addition amount of 20%, add 5% polyvinyl alcohol aqueous solution as pure substance to the mixed ITO powder, mix in a V-shaped mixer for 1 hour, and then add ceramic fiber to continue mixing 1h. 50g of the mixture was pressed into a green body with a diameter of 30mm and a relative density of 40%. The green body was first degreasing and degumming at 550 °C for 5 hours, and then sintered at a high temperature of 1480 °C for 3 hours. The sintering atmosphere was oxygen to obtain a porous ceramic tar...

Embodiment 3

[0027] Indium tin oxide (ITO, In 2 O 3 / SnO 2 =90 / 10) powder as raw material to obtain mixed ITO powder (in which nano powder accounts for 30wt%). Nano ITO powder is prepared by laser spinning to prepare ITO ceramic fiber, which is cooled with liquid nitrogen and then mechanically vibrated and crushed, and sieved with a 40-mesh sieve to obtain ceramic fiber with a length of 5-100 μm and a diameter of 0.5-4 μm. Weigh 50g ceramic fiber and 142.9g mixed ITO powder according to the addition amount of 35%, mix the ITO powder and add 5% polyvinyl alcohol aqueous solution as pure substance, mix in a V-shaped mixer for 1 hour, and then add the ceramic fiber to continue mixing For 1 h, 50 g of the mixture was pressed into a green body with a diameter of 30 mm and a relative density of 50%. The green body was first degreasing and degumming at 550 °C for 5 hours, and then sintered at a high temperature of 1460 °C for 6 hours. The sintering atmosphere was oxygen to obtain a porous cera...

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Abstract

The invention discloses a thermal evaporation coating ceramic target material and a preparation method thereof, the ceramic target material comprises a structural material which forms a heterostructure with raw material powder, the structural material is ceramic fibers and/or ceramic chips with the same chemical components as the raw material powder, the length of the ceramic fibers is 5-100 [mu] m, and the diameter of the ceramic fibers is 0.2-6 [mu] m; the thickness of the ceramic chip is 2-10 [mu] m, and the width of the ceramic chip is 20-60 [mu] m; the proportion of the structural material in the ceramic target material is 10-35 wt%. According to the preparation method, the ceramic fibers, the ceramic chips or the combination of the ceramic fibers and the ceramic chips which are made of the same material are added into the target raw materials, so that the ceramic target blank forms a heterostructure after being sintered, and the problem that cracking is easily caused by overlarge thermal shock stress during thermal evaporation of the ceramic target is solved on the premise that the coating quality is not influenced.

Description

technical field [0001] The invention belongs to the technical field of materials, and particularly relates to a ceramic target for thermal evaporation coating and a preparation method. Background technique [0002] Film materials with both visible light transparency and conductivity include ultra-thin metals, oxide ceramics, and conductive polymers. Among them, transparent conductive oxide (TCO) films of oxide systems have excellent conductivity and light transmission properties, and are widely used in various optoelectronics. Devices such as flat panel displays, touch screens, thin film solar cells. The widely used material of oxide transparent conductive film is In 2 O 3 and ZnO, such as Sn-doped In 2 O 3 (ITO), Al, Ga, In doped ZnO (AZO, GZO, IZO). The industrial methods for preparing these thin films mainly include magnetron sputtering, electron beam evaporation, and Reactive Plasma Deposition (RPD) evolved from electron beam evaporation. [0003] Magnetron sputter...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/80C04B35/453C04B35/622C04B35/64C23C14/08C23C14/30D01F9/08
CPCC04B35/80C04B35/622C04B35/64C04B35/453C04B35/62231C23C14/30C23C14/086C23C14/08D01F9/08C04B2235/77C04B2235/96C04B2235/522C04B2235/5436C04B2235/5445C04B2235/6583C04B2235/3286Y02P70/50
Inventor 许积文余晨旭杨玲王华
Owner GUILIN UNIV OF ELECTRONIC TECH
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