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Cr < 3 + >/Ni < 2 + > co-doped broadband near-infrared fluorescent powder, preparation method thereof and conversion type LED light-emitting device

A light-emitting device, near-infrared technology, applied in the direction of light-emitting materials, chemical instruments and methods, semiconductor devices, etc., can solve the problems of low quantum efficiency, hindering research, weak absorption of blue light, etc., and achieve high luminous efficiency, low synthesis cost and low cost low effect

Pending Publication Date: 2022-06-24
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, Ni 2+ in ATiO 3 :Ni 2+ (A=Sr, Ca, Mg, Ba) and fluorosilicate glass systems show ultra-broadband emission, and the emission is in the spectral range of 1000-2000nm, but its further research is hindered by low quantum efficiency and weak blue light absorption.

Method used

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  • Cr &lt; 3 + &gt;/Ni &lt; 2 + &gt; co-doped broadband near-infrared fluorescent powder, preparation method thereof and conversion type LED light-emitting device
  • Cr &lt; 3 + &gt;/Ni &lt; 2 + &gt; co-doped broadband near-infrared fluorescent powder, preparation method thereof and conversion type LED light-emitting device
  • Cr &lt; 3 + &gt;/Ni &lt; 2 + &gt; co-doped broadband near-infrared fluorescent powder, preparation method thereof and conversion type LED light-emitting device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] This embodiment provides a Cr 3+ / Ni 2+ Co-doped broadband near-infrared phosphor material Mg 0.99 Ni 0.005 Cr 0.005 O, namely MgO: 0.5% Ni, 0.5% Cr, its preparation method is as follows: according to the above material composition design, the matrix is ​​MgO, and ion Cr is doped 3+ and Ni 2+ The doping amount is 0.5mol%, accurately weigh magnesium oxide (MgO), nickel oxide (NiO) and chromium oxide (Cr 2 O 3 ), according to the stoichiometric ratio of each constituent element, weigh the above compound raw materials respectively, and the molar ratio of each element is Mg:Ni:Cr:O=0.99:0.005:0.005:1.

[0053] Put the above raw materials in an agate mortar and then add a small amount of ethanol (raw material 1g, ethanol 3mL) and grind for about 1 hour, make the raw materials fully mixed and then move it to a corundum crucible, cover it and place it in a high temperature reaction furnace for 2 hours at 1600 °C , and then naturally cooled to room temperature, and the s...

Embodiment 2

[0055] This embodiment provides a Cr 3+ / Ni 2+ Co-doped broadband near-infrared phosphor material Mg 0.985 Ni 0.01 Cr 0.005 O, that is, MgO: 1% Ni, 0.5% Cr, and its preparation method is as follows: according to the above material composition design, the matrix is ​​MgO, and ion Cr is doped. 3+ and Ni 2+ The doping amounts of MgO were 0.5 mol% and 1 mol%, respectively, and accurately weighed magnesium oxide (MgO), nickel oxide (NiO) and chromium oxide (Cr 2 O 3 ), according to the stoichiometric ratio of each constituent element, weigh the above compound raw materials respectively, and the molar ratio of each element is Mg:Ni:Cr:O=0.985:0.01:0.005:1.

[0056] Put the above raw materials in an agate mortar and then add a small amount of ethanol (raw material 1g, ethanol 3mL) and grind for about 1 hour, make the raw materials fully mixed, then move it to a corundum crucible, cover it and place it in a high temperature reaction furnace and burn it at a high temperature of 1...

Embodiment 3

[0058] This embodiment provides a Cr 3+ / Ni 2+ Co-doped broadband near-infrared phosphor material Mg 0.985 Ni 0.005 Cr 0.01 O, namely MgO: 0.5% Ni, 1% Cr, and its preparation method is as follows: according to the above material composition design, the matrix is ​​MgO, and ion Cr is doped. 3+ and Ni 2+ The doping amounts were 1 mol% and 0.5 mol%, respectively, and accurately weighed magnesium oxide (MgO), nickel oxide (NiO) and chromium oxide (Cr 2 O 3 ), according to the stoichiometric ratio of each constituent element, weigh the above compound raw materials respectively, and the molar ratio of each element is Mg:Ni:Cr:O=0.985:0.005:0.01:1.

[0059] Put the above raw materials in an agate mortar and then add a small amount of ethanol (raw material 1g, ethanol 3mL) and grind for about 1 hour, make the raw materials fully mixed, then move to a corundum crucible, cover and place in a high temperature reaction furnace and burn at 1350 ℃ for 20 hours , and then naturally co...

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Abstract

The invention relates to Cr < 3 + > / Ni < 2 + > co-doped broadband near-infrared fluorescent powder, a preparation method thereof and a conversion type LED light-emitting device. The chemical composition of the broadband near-infrared fluorescent powder is Mg < 1-x-y > Ni < x > CryO, x is less than or equal to 0.03, 0lt; and y < = 0.03. The near-infrared fluorescent powder provided by the invention is high in luminous intensity, good in temperature quenching characteristic, stable in chemical property and wide in excitation and emission range, an excitation band covers a spectral region from 250 nm to 850 nm, and an emission band covers a near-infrared region from 1000 nm to 1700 nm. The fluorescent powder can be used as a light conversion material of a blue light LED chip, and a broadband near-infrared light-emitting light source is realized. The preparation method is simple, easy to operate, low in equipment cost, free of pollution and suitable for being widely popularized and used.

Description

technical field [0001] The invention belongs to the technical field of luminescent materials, in particular to a Cr 3+ / Ni 2+ A co-doped broadband near-infrared phosphor, a preparation method thereof, and a conversion-type LED light-emitting device. Background technique [0002] Near-infrared (NIR) spectroscopy and imaging technology with fast, non-destructive detection characteristics have gained extensive attention in the fields of food safety, healthy eating, and early cancer diagnosis. At this stage, tiny NIR light-emitting diode (LED) chips have allowed them to be integrated in wearable devices such as mobile phones, and with the help of NIR spectroscopy and imaging technology, heart rate blood pressure monitoring or biometric identification can be realized. However, the research and development of broadband NIR luminescent materials is still in its infancy. At present, one of the main technical bottlenecks in this field is the lack of NIR light sources and correspond...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/60H01L33/50
CPCC09K11/602H01L33/504
Inventor 王静刘伯梅
Owner SUN YAT SEN UNIV