Flexible sensor preparation process

Abstract

The invention discloses a flexible sensor preparation process, which comprises the following steps of: printing a wire layer and an organic semiconductor film layer on the surfaces of an upper flexible substrate material and a lower flexible substrate material, and forming a latticed measurement loop; insulating layers perpendicular to the wire direction of the two layers of grids are printed at the intersection points of the two layers of grids respectively, and silica gel layers cover the outer sides of the insulating layers; on the basis of the insulating layer, a strain temperature-sensitive resistance material layer perpendicular to the line direction of the insulating layer is printed, and a conductor is connected with the organic semiconductor film layer; the lower circuit is printed with a silk-screen glue layer which is strip-shaped and is parallel to the lead of the lead layer; an upper circuit and a lower circuit are bonded through a silk-screen glue layer, a flexible array sensor sensing unit is formed at the intersection position of the upper circuit and the lower circuit, a graphene oxide film is provided, the flexible sensor unit is achieved through a nanometer printing method, the pattern structure is accurate, the integrity is high, and therefore the flexible sensor unit works stably, is convenient to use and is good in adaptability.

Description

technical field [0001] The invention relates to the field of sensors, in particular to a process for preparing a flexible sensor. Background technique [0002] Flexible sensor is a device that uses visible light as the detection object and converts the intensity change of visible light into voltage or voltage change. It is widely used in portable consumer products (such as smart phones, desktop computers and portable music players), consumer TV products ( Including LCD, plasma, rear projection and CRT TV, etc.), medical, industrial and automotive fields. [0003] In the prior art, flexible sensors mostly use silicon photodiodes or silicon phototransistors as detectors, and their structures usually include optical filters or polymer packaging materials to filter out infrared light and ultraviolet light. In silicon photodiodes or triodes, inorganic substances (such as cadmium sulfide) that have a strong photoelectric effect on visible light are mostly used for the photoactive...

AI Technical Summary

Problems solved by technology

The existing problems are: 1) The device prepared with silicon wafer as the substrate and inorganic material as the active layer is inflexible, which limits its application in wearable aspects; 2) With the development of microstructuring of sensor devices, the traditional process Electrodes are prepared by sputtering, mask photolithography / etching or evaporation processes. Due to the complexity of the mask preparation process, the preparation of microstructured devices is more difficult, and the evaporation process is not suitable for the preparation of microstructured devices. And it is difficult to achieve rapid and large-scale preparation, and at the same time, the process is difficult to control, resulting in poor sensitivity of the sensor; 3) The photoactive layer is made of inorganic materials, and the photoelectric properties of cadmium sulfide and silicon are in the range of visible light to near-infrared acceptance, so it is necessary to Additional layers of infrared-absorbing materials, such as ceramics / metal shells / blue glass, increase the cost and complicate the process. In addition, photolithography, implantation or evaporation processes are usually used to form photoactive layers with inorganic substances, and the equipment is expensive and the process is difficult. Complicated, the cost of device preparation is rising, and it is difficult to prepare products quickly and in large areas

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