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Low-resistance high-reflection ohmic contact electrode and preparation method thereof

A technology of ohmic contact electrodes and high reflection, which is applied in the manufacture of circuits, electrical components, and final products. It can solve the problems of less research on p-type ohmic contacts and achieve high light transmittance, low resistivity, and high conductivity.

Pending Publication Date: 2022-07-08
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Judging from the current research reports, most metals have not formed ideal ohmic contacts in the p-type layer of nitrides with high Al composition, and there are relatively few studies on p-type ohmic contacts.

Method used

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  • Low-resistance high-reflection ohmic contact electrode and preparation method thereof
  • Low-resistance high-reflection ohmic contact electrode and preparation method thereof
  • Low-resistance high-reflection ohmic contact electrode and preparation method thereof

Examples

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Embodiment 1

[0048] like figure 1As shown, this embodiment discloses a method for preparing a low-resistance and high-reflection ohmic contact electrode. The ohmic contact electrode is prepared on a p-type semiconductor wafer, and the p-type semiconductor wafer is a p-type group III nitride. The p-type III-nitride is AlGaN, specifically, the p-type III-nitride is p-Al 0.4 Ga 0.6 N, its preparation method comprises the following steps:

[0049] S1: cleaning the surface of the p-type semiconductor wafer; the specific steps are:

[0050] S11: Use electronic grade acetone and isoacetone to clean the surface of the p-type semiconductor wafer in turn, and then clean with deionized water;

[0051] S12: use pure hydrochloric acid or hydrofluoric acid to soak the p-type semiconductor wafer, and the soaking time is 20-90s;

[0052] S13: Then use deionized water to clean the p-type semiconductor wafer;

[0053] S14: Dry the p-type semiconductor wafer with high-purity ammonia gas;

[0054] S2: u...

Embodiment 2

[0064] In this example, the electrical characteristic test of the ohmic contact electrode obtained in Example 1 was carried out.

[0065] The line segment 1 is a comparative example. The main difference between the comparative example and this embodiment is that in step S3 of the comparative example, only one layer of metallic silver and one layer of metallic nickel are deposited, namely Ni / Ag and p-Al 0.4 Ga 0.6 Ohmic contact electrodes formed by N;

[0066] Line segment 2 is the ohmic contact electrode obtained in Example 1, namely Ag / Ni / Ag and p-Al 0.4 Ga 0.6 Ohmic contact electrodes formed by N.

[0067] Test results such as figure 2 shown, from figure 2 It can be seen that both line segment 1 and line segment 2 exhibit linear behavior, indicating that both can interact with p-Al 0.4 Ga 0.6 N forms a good ohmic contact, but the slope of line segment 2 is larger, indicating that Ag / Ni / Ag and p-Al 0.4 Ga 0.6 The ohmic contact electrode formed by N has lower resist...

Embodiment 3

[0069] In this example, the optical characteristic test of the ohmic contact electrode obtained in Example 1 was carried out.

[0070] Wherein, line segment 1 is the ultraviolet light reflectance curve spectrum of the ohmic contact electrode obtained in Example 1 after annealing at 350°C;

[0071] Line segment 2 is the ultraviolet light reflectance curve spectrum of the ohmic contact electrode obtained in Example 1 after annealing at 450°C.

[0072] image 3 Optical properties of Ag / Ni / Ag / Al of the ohmic contact electrode obtained in Example 1 on a sapphire substrate. from image 3 It can be seen that the overall reflectivity of annealing at 350°C (line segment 1) is significantly higher than that of annealing at 450°C (line segment 2), indicating that the ohmic contact electrode of this embodiment is more favorable for obtaining high reflectivity at low temperatures, that is, 350 The samples annealed at ℃ (line 1) have higher light reflectance.

[0073] from image 3 It ...

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Abstract

The invention discloses a low-resistance high-reflection ohmic contact electrode which comprises a p-type semiconductor wafer, and a metal electrode layer is deposited on the p-type semiconductor wafer. The first metal silver layer, the metal nickel layer, the second metal silver layer and the metal aluminum layer are sequentially deposited on the surface of the p-type semiconductor wafer, and the first metal silver layer is in contact with the metal electrode layer on the p-type semiconductor wafer. The invention further discloses a preparation method of the low-resistance high-reflection ohmic contact electrode. The low-resistance and high-light-transmission ohmic contact is formed by adopting the metal silver-metal nickel-metal silver film lamination and is combined with the aluminum film to prepare the ohmic contact electrode, and the ohmic contact electrode has the advantages of being simple in preparation method, high in conductivity, low in ohmic contact resistivity and high in reflectivity.

Description

technical field [0001] The present invention relates to the technical field of semiconductor electronics and optoelectronics, and more particularly, to a low-resistance and high-reflection ohmic contact electrode and a preparation method thereof. Background technique [0002] In the preparation of UV optoelectronic devices based on group III nitrides, the development of n-type ohmic contacts has been relatively complete, while the preparation of p-type ohmic contacts still faces great challenges, and p-type ohmic contact electrodes with low contact resistance are the key preparation. One of the technology. For example, for ultraviolet avalanche photodetectors (APDs), high-performance p-type ohmic contacts have smaller contact resistances and smaller partial voltages, enabling APDs to achieve high gain at lower operating voltages. [0003] For ultraviolet light-emitting devices, such as light-emitting diodes (LEDs), p-type ohmic contact electrodes with low contact resistance...

Claims

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Application Information

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IPC IPC(8): H01L33/40
CPCH01L33/405H01L2933/0016Y02P70/50
Inventor 江灏孙悦卢家冰吕泽升
Owner SUN YAT SEN UNIV
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