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High-integration patterning printing method and application

A patterned, high-energy technology, applied in printing, replication/marking methods, gaseous chemical plating, etc., can solve the problems of difficult to achieve high-integration pattern construction, limited line spacing, etc., to achieve pattern refinement and integration. High, low cost, the effect of improving the resolution

Pending Publication Date: 2022-07-15
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the line spacing is limited by the template, and it is difficult to realize the construction of highly integrated patterns

Method used

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  • High-integration patterning printing method and application
  • High-integration patterning printing method and application
  • High-integration patterning printing method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0064] (1) Preparation of flexible first substrate

[0065] Weigh an appropriate amount of polyurethane masterbatch (TPU) and dissolve it in N,N-dimethylformamide (DMF) solvent to prepare a solution with a mass concentration of 25%, and add octylphenol polyoxyethylene with a mass concentration of 2.0%. Ether, the polyurethane film is prepared by blade coating, so that the contact angle value is in the range of 35°-50°;

[0066] (2) Preparation of solution containing functional material

[0067] Use silver nanoparticles with a particle size of about 30-50nm, sodium dodecyl sulfate (SDS) and deionized water to prepare a solution containing silver nanoparticles, wherein the mass concentration of silver nanoparticles is 3%, and the mass concentration of SDS is 0.2%;

[0068] (3) Preparation of high-precision and high-integration patterned arrays

[0069] The TPU film was cut into splines of 8 cm in length and 3 cm in width, and the splines were stressed using a stretching devic...

Embodiment 2

[0071] (1) Preparation of flexible first substrate

[0072] Weigh an appropriate amount of TPU masterbatch and dissolve it in DMF solvent, prepare a solution with a mass concentration of 25%, add octylphenol polyoxyethylene ether with a mass concentration of 2.0%, and prepare a polyurethane film by scraping to make the contact angle. The value is in the range of 35°-50°;

[0073] (2) Preparation of solution containing functional material

[0074] An aqueous solution of the conductive polymer PEDOT:PSS was prepared. Among them, the mass concentration of PEDOT:PSS is 1.0%, and the mass concentration of SDS is 0.2%;

[0075] (3) Preparation of high-precision and high-integration patterned arrays

[0076] The TPU film was cut into splines with a length of 8 cm and a width of 2 cm, and the splines were stretched to 100% with stress and fixed. The second substrate silicon stencil is subjected to plasma treatment, the power is 60W, and the time is 50S-70S, wherein the microstructur...

Embodiment 3

[0078] (1) Preparation of flexible first substrate

[0079] Weigh an appropriate amount of TPU masterbatch and dissolve it in DMF solvent, prepare a solution with a mass concentration of 25%, add octylphenol polyoxyethylene ether with a mass concentration of 2.0%, and prepare a polyurethane film by scraping to make the contact angle. The value is in the range of 35°-50°;

[0080] (2) Preparation of solution containing functional material

[0081] A solution of sodium alginate-coated liquid metal gallium was prepared. Among them, the mass concentration of gallium is 5%, and the mass concentration of SDS is 0.2%;

[0082] (3) Preparation of high-precision and high-integration patterned arrays

[0083] The TPU film was cut into splines with a length of 8 cm and a width of 2 cm, and the splines were stretched to 100% with stress and fixed. The second base material silicon wafer stencil is subjected to plasma treatment, the power is 60W, and the time is 50S-70S, wherein the mic...

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Abstract

The invention discloses a high-integration patterning printing method and application, and the method comprises the steps: 1) preparing a second base material containing a microstructure array, and carrying out high-energy radiation treatment; 2) dissolving a first base material raw material in an organic solvent to prepare a first base material with a hydrophilic group on the surface; (3) stress is applied to the first base material in the step (2), so that the first base material is kept in a stretching state; (4) adding a solution containing a functional material to the surface of the first base material which is kept in the stretched state in the step (3); 5) superposing the second base material subjected to radiation treatment with the first base material, so that the second base material, the solution containing the functional material and the first base material form a'sandwich 'structure; and 6) after the solvent in the sandwich structure is volatilized, separating the first base material from the second base material, and releasing the first base material to prepare the patterned array. The preparation method is simple, and has the advantages of being environmentally friendly, low in cost and high in pattern refinement degree and integration degree.

Description

technical field [0001] The present invention relates to the printing field of functional materials, in particular, to a highly integrated patterned printing method and application, in particular to an elastomer substrate-assisted highly integrated stencil printing method and application of patterned arrays. Background technique [0002] Advanced patterned micro- and nanofabrication techniques are essential to facilitate the miniaturization and integrated fabrication of functional devices, such as field-effect transistors, sensors, and display devices. As a typical micro-nano fabrication technology, photolithography is widely used to fabricate electronic devices with high-resolution circuits. However, photolithography has the disadvantages of cumbersome processing steps, high energy consumption, high cost and limited material applicability. Over the past few decades, some alternative micro-nanofabrication manufacturing processes, such as nanoimprinting, nanotransfer printing...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B81B7/04B41M5/00
CPCB81C1/00214B81B7/04B41M5/0023B41M5/0041
Inventor 吕文坤乔雅丽宋延林
Owner INST OF CHEM CHINESE ACAD OF SCI
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