Cr3Te4 non-layered two-dimensional material and preparation and application thereof

A two-dimensional material, non-layered technology, applied in the field of nanomaterials, can solve the problems of limited performance exploration and inability to obtain two-dimensionality, and achieve the effects of good crystallinity, good shape, and excellent air

Pending Publication Date: 2022-07-22
HUNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Researchers have grown Cr on graphene substrates using MBE 3 Te 4 single layer 24 , and tested the Curie temperature and easy magnetization axis of monolayer and about 7nm film, but because MBE is restricted by lattice matching, it can only grow Cr on graphene substrate 3 Te 4 Molecular layer, unable to obtain pure phase two-dimensional Cr 3 Te 4 material, limited to Cr 3 Te 4 Exploration of Intrinsic Performance

Method used

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  • Cr3Te4 non-layered two-dimensional material and preparation and application thereof
  • Cr3Te4 non-layered two-dimensional material and preparation and application thereof
  • Cr3Te4 non-layered two-dimensional material and preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0106] Cr 3 Te 4 Preparation of nanosheets:

[0107] Put the porcelain boat filled with Te powder in the constant temperature zone upstream of the tube furnace (the temperature is 630℃, which is the volatilization temperature of Te powder), and it is filled with CrCl 3 and the deposition surface faces CrCl 3 placed silicon wafers (285nm SiO 2 / Si substrate) the porcelain boat is placed in the center of the downstream constant temperature zone (temperature is 680℃; CrCl 3 volatilization and deposition temperature). CrCl 3 The mass ratio of powder and Te powder was 1:1 (0.05g / 0.05g). Before heating, purge the air in the quartz tube with a large flow of argon. Then, the constant temperature zones 2 and 3 are heated to 630°C (Te powder volatilization temperature) and 680°C (CrCl 3 volatilization and deposition temperature), and the flow rate of the argon-hydrogen mixture was 40 / 15 sccm, and the temperature was kept constant for 5 min. There will be single crystal Cr on th...

Embodiment 2

[0110] Compared with Example 1, the difference is only that the weight ratio of chromium trichloride and Te is adjusted, respectively: (A): the weight ratio of chromium trichloride and Te is 3:1; (B): trichloride The weight ratio of chromium and Te is 2:1; other preparation processes such as raw material volatilization temperature, deposition temperature, carrier gas and the consumption of Te are the same as in Example 1. The optical image of the prepared product is shown in Image 6 (Scale bar is 10 μm).

[0111] The experimental results of group A can be found in Image 6 a, The product is a nanosheet with a large thickness (about 30-40nm), and there is a certain amount of chromium trichloride deposition on the surface of the substrate (blue substance on the substrate), which makes the material prone to deliquescence and affects the crystal quality. The experimental results of group B can be found in Image 6 b, Cr 3 Te 4 Growth has improved significantly, Cr 3 Te 4 T...

Embodiment 3

[0113] Compared with Example 1, the only difference is that the temperature at which Te volatilizes is adjusted, which are: (A): 600°C; (B): 640°C; (C): 670°C; (D): 570°C; (E) ): 700°C (F): 720°C; other steps and parameters are the same as in Example 1. For optical pictures under each condition see Figure 7 .

[0114] Figure 7 a-c are Cr grown in the preferred range (600-670°C range) by controlling the volatilization temperature of Te 3 Te 4 The optical picture of the nanosheets shows that the thickness of the nanosheets basically increases with the increase of the volatilization temperature of Te, and the synthesized nanosheets have regular shapes, clean surfaces and high crystal quality. Figure 7 d-f is the volatilization temperature of other Te. It is found that when the volatilization temperature of Te is low, due to insufficient supply of Te, the nanosheets will generate more lattice defects of Te during the growth process, resulting in poor crystal quality. high ...

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Abstract

The invention belongs to the field of preparation of two-dimensional non-layered materials, and particularly relates to a preparation method of a Cr3Te4 non-layered two-dimensional material, which comprises the following steps: heating CrCl3 and Te powder to volatilize, and carrying out chemical deposition on the surface of a substrate in a hydrogen-containing carrier gas at the deposition temperature of 650-780 DEG C to obtain the Cr3Te4 non-layered two-dimensional material; the mass ratio of the CrCl3 to the Te powder is (1-3): 1; the volatilization temperature of the Te powder is 590-700 DEG C; the volatilization temperature of the CrCl3 is 650 to 780 DEG C; the volume content of hydrogen in the hydrogen-containing carrier gas is greater than 20%; the flow rate of hydrogen in the hydrogen-containing carrier gas is 10-60 sccm. The invention also discloses the material prepared by the preparation method and application thereof. According to the preparation method disclosed by the invention, a new material with high phase purity, high crystallinity and excellent air stability and solution stability can be obtained, and the material has an excellent photo-electromagnetic application prospect.

Description

technical field [0001] The invention belongs to the field of nanomaterials, and specifically relates to Cr 3 Te 4 Preparation of non-layered two-dimensional materials. [0002] technical background [0003] Two-dimensional (2D) materials in electronic and optoelectronic devices, energy storage, electrocatalysis 1-5 It has broad application prospects in other fields. In recent years, two-dimensional magnetic materials (such as Cr 2 Ge 2 Te 6 6 , CrI 3 7 , Fe 3 GeTe 2 8 , CrSe 2 9 and MnBi 2 Te 4 10 ) are magnetically tunable under the action of electric field, strain and substrate, exhibiting rich physical phenomena such as the magnetic proximity effect 11 ,Anomalous quantum Hall effect 12 and chiral spin structure 13 ). It shows that the two-dimensional magnetic materials have great application potential in the fields of next-generation information storage, quantum computing and spintronics. However, the currently discovered magnetic two-dimensional mater...

Claims

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Application Information

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IPC IPC(8): C30B25/16C30B25/18C30B29/46C30B29/64H01L43/06H01L43/10B82Y30/00B82Y40/00
CPCC30B25/16C30B25/18C30B29/46C30B29/64B82Y30/00B82Y40/00H10N52/00H10N50/85
Inventor 段曦东黎博李百灵
Owner HUNAN UNIV
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