Preparation method of solar cell, solar cell and power generation device

Abstract

The invention provides a preparation method of a solar cell, the solar cell and a power generation device. The preparation method of the solar cell comprises the following steps: placing a P-type doped silicon wafer in a reaction chamber, and forming an N-type doped layer on the surface of the P-type doped silicon wafer; introducing a phosphorus source into the reaction chamber, controlling the flow velocity of the phosphorus source to be 1200-1500 sccm, and heating the silicon wafer to form a phosphorosilicate glass layer on the surface of the N-type doped layer; the silicon wafer is doped by laser, so that phosphorus atoms in the phosphorosilicate glass layer are diffused into the N-type doped layer; and removing the phosphorosilicate glass layer, forming a grid line electrode on the laser-doped part on the surface layer of the silicon wafer, and sintering. According to the preparation method of the solar cell, a specific diffusion process is adopted, so that the phosphorus content of the phosphorosilicate glass layer on the surface of the silicon wafer is improved, and the problem that the efficiency and the yield of the solar cell are limited by screen printing sintering in the traditional technology is solved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a preparation method of a solar cell, a solar cell and a power generation device. Background technique [0002] A solar cell is a semiconductor component that uses the photovoltaic effect to convert light energy into electrical energy. Solar energy is an inexhaustible clean energy, so it has received extensive attention. [0003] PERC (Passivated Emitter and Rear Cell), that is, passivated emitter and back cell technology, is considered to be a cost-effective technology for preparing solar cells. PERC technology refers to the addition of a dielectric passivation layer on the back of the solar cell. The passivation layer can reduce the recombination of surface carriers and thus improve the conversion efficiency. [0004] Screen sintering is an indispensable link in the preparation process of PERC cells. Specifically, the surface of the solar cell is usually provided with a ...

AI Technical Summary

Problems solved by technology

[0005] In the actual production process, when the sintering temperature is low, there is an under-firing situation. When under-firing, the metal paste cannot fully penetrate the silicon nitride dielectric film into the silicon wafer, and cannot form a good ohmic contact, resulting in poor solar cell yield. and reduced efficiency

When the sintering temperature is high, over-burning will occur. When over-burning, the metal component of the grid line is likely to enter the junction area, which will cause a partial short circuit; and the aluminum metal will also melt into the silicon and form an aluminum-silicon alloy layer, causing battery damage. If the wafer fails, the hydrogen in the silicon nitride thin layer will also escape from the silicon, weakening the passivation effect of hydrogen on the silicon wafer, and also leading to a decrease in the yield and efficiency of solar cells

The above two situations contradict each other, and it is difficult to solve the above two problems at the same time in the actual preparation process, which limits the improvement of the efficiency of solar cell products

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