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Method and apparatus for in-situ monitoring of plasma etch and deposition processes using pulsed broadband light source

A plasma, broadband light technology, applied in the direction of using optical devices, measuring devices, ion implantation plating, etc., can solve the problems of low intensity, difficult to detect interferometric signals, etc.

Inactive Publication Date: 2004-05-05
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Finally, these light sources are often of relatively low intensity, making it more difficult to detect the interferometric signal above the plasma emission background

Method used

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  • Method and apparatus for in-situ monitoring of plasma etch and deposition processes using pulsed broadband light source
  • Method and apparatus for in-situ monitoring of plasma etch and deposition processes using pulsed broadband light source
  • Method and apparatus for in-situ monitoring of plasma etch and deposition processes using pulsed broadband light source

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Embodiment Construction

[0026] figure 2 Components of a system (designated 30 ) using multiple wavelengths of illumination are shown. System 30 includes an illumination assembly 33 that includes a flash 35 and a power supply 37 with a trigger. System 30 also includes a multi-channel spectrograph 40 , an analog-to-digital converter 43 , a synchronizer and bus interface 45 , first and second data files 47 and 49 , and a data processing and algorithm development block 50 . Fiber optics 60 optically connect flashlamp 35 and spectrograph 40 to a beam forming assembly 70 disposed outside a plasma chamber. As described below, the system 30 is used to calculate the thickness of a film on a wafer disposed within a plasma chamber.

[0027] Flash lamp 35 produces broadband light in the range of about 200 nm to 2 microns. Optical fiber 60 conveys broadband light from flashlamp 35 to beam forming assembly 70 disposed outside the plasma chamber. Beam forming assembly 70 includes a collimator 72 ( image 3 ), ...

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Abstract

An interferometric method and apparatus for in-situ monitoring of a thin film thickness and of etch and deposition rates using a pulsed flash lamp providing a high instantaneous power pulse and having a wide spectral width. The optical path between the flash lamp and a spectrograph used for detecting light reflected from a wafer is substantially transmissive to the ultraviolet range of the spectrum. Film thickness and etch and deposition rates are calculated by software algorithms.

Description

technical field [0001] The present invention relates to the field of semiconductor substrate processing, in particular to monitoring material thickness and etching and deposition rates during plasma etching and deposition processes of semiconductor substrates. Background technique [0002] The production of integrated circuit devices requires the formation of various layers (conductive, semiconductive, and nonconductive) on a base substrate to form the desired components and interconnections. During the production process, a specific layer or specific portions of these layers must be removed in order to form various components and interconnections. This is usually done using an etch process. The etching techniques used include wet or chemical etching and dry or plasma etching. The latter technique typically relies on reactive species produced by process gases that flood the surface of the material to be etched. A chemical reaction occurs between the material and these act...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/54C23C16/52G01B11/06H01L21/205H01L21/3065
CPCG01B11/0683H01L22/00
Inventor 安德鲁·佩里兰德尔·S·蒙特
Owner LAM RES CORP