Prepn process of efficient cheap large-area silicon crystal solar cell

A solar cell and crystalline silicon technology, applied in the field of solar energy applications, can solve the problems of not realizing compensation, not taking into account the impact, not taking into account, etc., to achieve the effect of improving efficiency, improving performance, and simplifying the process

Inactive Publication Date: 2005-06-15
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This technology does not take into account the impact on the aluminum back field caused by printing pure silver paste at the small window of the aluminum paste
The compensation effect of trivalent aluminum on the back to pentavalent phosphorus has not been realized at the small window of aluminum paste
In addition, this technology does not take into account that in the process of burning through the silicon nitride film, the front PN junction needs to be redesigned

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Use the above steps to carry out the front chemical pretreatment on the silicon wafer; the process of making the semiconductor PN junction on the silicon wafer is: the temperature of the constant temperature zone for the PN junction of the monocrystalline silicon solar cell is 900 ° C, and the PN junction of the polycrystalline silicon solar cell is made. The temperature in the constant temperature zone is 850°C. First, the silicon wafer is preheated for 5 minutes. During preheating, nitrogen and oxygen are introduced into the diffusion furnace. The nitrogen flow rate is 300ml / min, and the oxygen flow rate is 85ml / min; The constant source diffusion, when constant source diffusion, feed nitrogen and oxygen into the diffusion furnace, the flow rate of oxygen is 85ml / min, the flow rate of nitrogen gas is 70ml / min; At the same time, feed nitrogen and oxygen into the diffusion furnace, the flow rate of nitrogen gas is 300ml / min, and the flow rate of oxygen gas is 85ml / min.

...

Embodiment 2

[0032] Use the above step 1 to carry out the front chemical pretreatment of the silicon wafer; the process of making the semiconductor PN junction on the silicon wafer is: the temperature of the constant temperature zone for the PN junction of the monocrystalline silicon solar cell is 950 ° C, and the PN junction of the polycrystalline silicon solar cell is made The temperature in the constant temperature zone is 900°C. First, the silicon wafer is preheated for 5 minutes. During preheating, nitrogen and oxygen are introduced into the diffusion furnace. The nitrogen flow rate is 300ml / min, and the oxygen flow rate is 85ml / min. One-minute constant source diffusion, during constant source diffusion, feed nitrogen and oxygen into the diffusion furnace, the flow rate of oxygen is 85ml / min, and the flow rate of nitrogen gas is 70ml / min; When propelling, feed nitrogen and oxygen into the diffusion furnace, the nitrogen flow rate is 300ml / min, and the oxygen flow rate is 85ml / min.

[...

Embodiment 3

[0036] The above-mentioned steps are used for the front-end chemical pretreatment of silicon wafers. The semiconductor PN junction manufacturing process is: the temperature in the constant temperature zone is 930°C, and the temperature in the constant temperature zone for the PN junction of polycrystalline silicon solar cells is slightly lower than that of monocrystalline silicon solar cells. The junction fabrication temperature is 880°C. First, preheat the silicon wafer for 5 minutes. During preheating, feed nitrogen and oxygen into the diffusion furnace. The nitrogen flow rate is 300ml / min, and the oxygen flow rate is 85ml / min. Constant source diffusion, during constant source diffusion, feed nitrogen and oxygen into the diffusion furnace, the flow rate of oxygen is 85ml / min, and the flow rate of nitrogen gas is 70ml / min; At the same time, feed nitrogen and oxygen into the diffusion furnace, the flow rate of nitrogen gas is 300ml / min, and the flow rate of oxygen gas is 85ml / m...

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Abstract

This invented technology for preparing crystal silicon solar battery is divided into six steps according to production procedurs: chemical pretreatment, p-n junction process, inductance couple plasmaetching edges, depositing silicon nitride film, silk-screen printing front and back electrodes to be metalized and silicon nitride film burnt through. This invention simplifies the solar battery processing technique reducing the electrode sinter procedure to once from two or three times which increases solar battery effect by 15.7% for commercial large area 103X103mm2 of monocrystal silicon battery and over 14.0% for polysilicon battery.

Description

technical field [0001] The invention relates to a solar cell preparation method, in particular to a high-efficiency and low-cost large-area crystalline silicon solar cell preparation process and method, belonging to the field of solar energy applications. Background technique [0002] The basis for the exponential growth of crystalline silicon solar cell production and sales in the past 20 years is the improvement and development of crystalline silicon solar cell production technology and the continuous reduction of production costs. In the existing technical magazines and patent documents of various countries in the world, there are many reports on the process of crystalline silicon solar cells. After careful analysis, they are not the same. Each specialized process has its own characteristics and the background of technical equipment that can be supported. Scope of application, most of the reports are studies on a single process. After literature search, it was found that...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/022425Y02E10/547
Inventor 周之斌崔容强程平芳于化丛孟凡英蔡燕晖赵春江徐秀琴陈东
Owner SHANGHAI JIAO TONG UNIV
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