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Photoresist pattern thickness-increasing material, photoresist pattern containing it and its use

A technology of photoresist pattern and thick photoresist, which is applied in the direction of photosensitive material processing, application of radioactive source radiation, photosensitive material for optomechanical equipment, etc.

Inactive Publication Date: 2007-04-18
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the current status is that there is no technology that can use light as a light source for exposure equipment when forming patterns and that can form uniform, fine hollow patterns in high detail ("hollow A "space pattern" is defined herein as a hole, groove, depression, or any other empty area formed by the developed (removed) photoresist)

Method used

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  • Photoresist pattern thickness-increasing material, photoresist pattern containing it and its use
  • Photoresist pattern thickness-increasing material, photoresist pattern containing it and its use
  • Photoresist pattern thickness-increasing material, photoresist pattern containing it and its use

Examples

Experimental program
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Effect test

example 1

[0161] Preparation of photoresist pattern thickening material

[0162] The photoresist pattern thickening material A to the photoresist pattern thickening material F of the present invention were prepared, and their compositions are shown in Table 1. Note that in Table 1, the units of values ​​in parentheses are mass fractions. In the "Resin" column, "KW-3" is a polyvinyl acetal resin (manufactured by Sekisui Chemical Co. Ltd.). In the "crosslinking agent" column, "biurea" is tetramethoxymethylglycol uril, and "urea" is N,N'-dimethoxymethyldimethoxy ethyl urea. In the "Surfactant" column, "TN-80" is a nonionic surfactant (polyoxyethylene monoalkyl ether surfactant manufactured by Asahi Denka Co. Ltd.). In addition, a mixed liquid of pure water (deionized water) and isopropanol (mass ratio of pure water (deionized water): isopropanol is 82.6:0.4) is used as a resin, crosslinking agent and nitrogen-containing compound other main solvent components.

[0163]

[016...

example 2

[0176] As shown in FIG. 3A , an interlayer insulating film 12 is formed on a silicon substrate 11 . As shown in FIG. 3B, a titanium film 13 is formed on the interlayer insulating film 12 by a sputtering method. Then, as shown in FIG. 3C, a photoresist pattern 14 is formed. The opening 15a is formed by patterning the titanium film 13 by reactive ion etching by using the photoresist pattern 14 as a mask. Next, as shown in FIG. 3D, the photoresist pattern 14 is removed by reactive ion etching, and an opening 15b is formed in the interlayer insulating film 12 by using the titanium film 13 as a mask.

[0177] Then, the titanium film 13 is removed by a wet process, and as shown in FIG. 4E, a TiN film 16 is formed on the interlayer insulating film 12 by a sputtering method. Next, a Cu thin film 17 is grown on the TiN film 16 by electrolytic plating. Then, as shown in FIG. 4F, planarization (leveling) is carried out by CMP, so that the isolation metal and the Cu thin film (the firs...

example 3

[0182] Flash memory and process for manufacturing same

[0183] Example 3 is an example of a semiconductor device applying the photoresist pattern thickening material of the present invention and a process for manufacturing the semiconductor device. Note that in Example 3, the photoresist films 26, 27, 29, 32, and 34 to be described hereinafter are those that have been thickened by using the photoresist pattern thickening material of the present invention by the same process as in Example 1 and Example 2. thick photoresist films.

[0184] 6A and 6B are top views (top views) of a FLASH EPROM called a FLOTOX type or ETOX type. Note that FIGS. 7A to 7C , 8D to 8F , and 9G to 9I are schematic cross-sectional views for explaining an example of a process of manufacturing a FLASH EPROM. In FIGS. 7A to 9I , the diagram on the left is the memory cell portion (first element region), which is the direction of the gate width of the portion where the MOS transistor with the floating gate i...

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Abstract

The present invention provides a resist pattern thickening material which can thicken a resist pattern to be thickened regardless of a material or a size thereof so as to form a fine space pattern, exceeding an exposure limit of exposure light. The resist pattern thickening material comprises: a resin; a crosslinking agent; and a nitrogen-containing compound. In a process for forming a resist pattern of the present invention, the resist pattern thickening material is applied on a surface of a resist pattern to be thickened, thereby forming a resist pattern. A process for manufacturing a semiconductor device of the present invention includes: applying the thickening material on a surface of a resist pattern to be thickened which is formed on an underlying layer, so as to thicken the resist pattern to be thickened and form a resist pattern; and patterning the underlying layer by etching using the resist pattern.

Description

technical field [0001] The invention relates to a photoresist pattern thickening material, the material is applied to the photoresist pattern to be thickened, the photoresist pattern to be thickened is thickened, and the material can be exposed by exceeding the light source of the existing exposure equipment The limit forms a fine hollow pattern. The present invention also relates to a process for forming a photoresist pattern and a process for fabricating a semiconductor device using a photoresist pattern thickening material. Background technique [0002] Semiconductor integrated circuits are becoming more highly integrated, and LSI and VLSI are being put into practical use. Along with this trend, wiring patterns extend to areas of 0.2 μm or less, and the smallest patterns extend to areas of 0.2 μm or less. Photolithography is extremely important in forming fine wiring patterns. In photolithography, a substrate on which a thin film is to be formed is covered with a photo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/40H01L21/027G03F7/004G03F7/00G11B5/17G11B5/31H01L21/3065H01L21/311H01L21/3213H01L21/8247H10B69/00
CPCY10S430/11G11B5/3163H01L27/105G03F7/0035H01L21/32139H01L27/11543G11B5/17H01L21/0273H01L27/11526G03F7/40H01L21/31144G11B5/313H10B41/48H10B41/40G03F7/004
Inventor 小泽美和野崎耕司並木崇久今纯一
Owner FUJITSU LTD
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