Preparation method of high temperature resistant multi crystal silicon carbide fiber
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- NAT UNIV OF DEFENSE TECH
- Publication Date
- 2003-04-16
- Estimated Expiration
- Not applicable · inactive patent
Abstract
Description
technical field
[0001] The invention relates to a preparation method of high temperature resistant polycrystalline silicon carbide fiber above 1500°C. Background technique
[0002] At present, SiC fibers are mostly prepared by melt-spinning, non-melting treatment and high-temperature firing with organosilicon polymer-polycarbosilane (PCS) as the precursor. However, since the air oxidation method is usually used to cross-link the fibers in the process of non-melting treatment, a large amount of oxygen is introduced into the fibers, and because PCS is a carbon-rich precursor, the final obtained Ceramic fiber is a carbon-rich, oxygen-rich non-stoichiometric SiC fiber. When the operating temperature exceeds 1200°C, impurity oxygen will escape in the form of gaseous CO or SiO, resulting in a large number of holes in the fiber due to weightlessness, rapid growth of crystal grains, and a sharp drop in strength. Therefore, its maximum operating temperature is only about 1000°C. I...