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Polishing compound and method for polishing substrate

A polishing agent and substrate technology, applied in polishing compositions containing abrasives, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of reduced polishing speed, inability to visually detect the degree of sedimentation, and unstable dispersion. , to achieve the effect of easy process management

Inactive Publication Date: 2003-11-19
HITACHI CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Another problem is that the pH of the polishing agent changes over time during the polishing process or during storage, and the pH change will cause the polishing speed to decrease.
[0010] In addition, sometimes the abrasive particles dispersed in the polishing agent either settle or agglomerate, making the dispersion unstable
When evaluating the dispersibility of such a polishing agent, it is difficult to make a numerical evaluation of the dispersion stability because the particle size of the dispersed particles is small and the degree of sedimentation cannot be detected visually.

Method used

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  • Polishing compound and method for polishing substrate
  • Polishing compound and method for polishing substrate
  • Polishing compound and method for polishing substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0111] (Preparation of polishing compound)

[0112] 430 g Ce(NH 4 ) 2 (NO 3 ) 6 It was dissolved in 7300 g of pure water, and 240 g of ammonia water (25% aqueous solution) was mixed and stirred in this solution to obtain a suspension containing 160 g of cerium hydroxide (yellow-white). The obtained cerium hydroxide suspension was subjected to centrifugation (4000 rpm, 5 minutes) for solid-liquid separation, and fresh pure water was added after the liquid was removed. Centrifugation was then carried out under the above conditions, and this operation was repeated four times before washing. The specific surface area of ​​the obtained particles was measured by the BET method and was 200 m2 / g. 160 g of the particles and 15840 g of pure water were mixed, subjected to ultrasonic dispersion treatment, and then filtered through a 1 micron membrane filter to obtain a polishing agent with a solid state of 1% by weight. The particle size of the polishing agent was measured by photon...

Embodiment 2

[0116] (Preparation of polishing compound)

[0117] 43 g Ce(NH 4 ) 2 (NO 3 ) 6 It was dissolved in 7300 g of pure water, and 24 g of ammonia water (25% aqueous solution) was mixed and stirred in this solution to obtain a suspension containing 16 g of cerium hydroxide (yellow-white). The obtained cerium hydroxide suspension was subjected to centrifugation (4000 rpm, 5 minutes) for solid-liquid separation, and fresh pure water was added after the liquid was removed. Further ultrasonic treatment was made into a dispersion liquid. The obtained particles had a density of 4.7 g / cm 3 and a specific surface area of ​​180 m 2 / g. The particle concentration in the dispersion was adjusted to 1.0% by weight, and the pH was adjusted to 6.0 to obtain a polishing agent. The stock solution of the polishing agent was used for the measurement, and the average particle diameter of the secondary particles was measured by the photon correlation method, which was 100 nanometers.

[0118] (Po...

Embodiment 3

[0121] (Preparation of polishing compound)

[0122] 430 g Ce(NH 4 ) 2 (NO 3 ) 6 It was dissolved in 5000 g of pure water, and 240 g of ammonia water (25% aqueous solution) was mixed with this solution and stirred to obtain a suspension containing 160 g of cerium hydroxide (yellow-white). Thereafter, it was treated in the same manner as in Example 2 to prepare a dispersion liquid. The obtained particles had a density of 4.2 g / cm 3 and a specific surface area of ​​240 m 2 / g. The particle concentration in the dispersion was adjusted to 1.0% by weight, and the pH was adjusted to 7.3 to obtain a polishing agent. The average particle diameter of the secondary particles of this polishing agent stock solution was measured by photon correlation method, and it was 230 nanometers.

[0123] (Polishing of insulating film layer)

[0124] Using the polishing agent prepared above, the silicon oxide insulating film was polished, dried and washed in the same manner as in Example 2. As a...

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Abstract

A polishing slurry and a polishing method which are suitably used in a CMP technique for flattening a surface of a substrate in a production process of a semiconductor device. The polishing slurry comprises particles and a medium in which at least a part of the particles are dispersed, wherein the particles are made of at least one of (1) a cerium compound selected from cerium oxide, cerium halide and cerium sulfide and having a density of 3 to 6 g / cm<3> and an average particle diameter of secondary particles of 1 to 300 nm and (2) a tetravalent metal hydroxide. A polishing method using the polishing slurry takes advantage of a chemical action of particles in the polishing slurry and minimizes a mechanical action of the particles, thereby achieving a decrease in scratches caused by the particles and an increase in polishing rate at the same time.

Description

technical field [0001] The present invention relates to a polishing agent suitable for use in the field of semiconductor element manufacture, and a substrate polishing method for polishing a substrate using the polishing agent. Background technique [0002] In the current ULSI semiconductor device manufacturing process, research and development of high-density and miniaturization processing technologies are under way. One of them, CMP (Chemical Mechanical Engineering) technology, is becoming an important part of the semiconductor element manufacturing process for planarization of interlayer insulating films, formation of recesses and trenches (Siyaro-Trench) element separation, plugs and buried metal Necessary technology for wiring formation. [0003] In the manufacturing process of semiconductor elements, silicon oxide (SiO 2 ), cerium oxide series (CeO 2 ) particles are used as abrasives in chemical mechanical polishing agents to planarize inorganic insulating films suc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/00C01F17/235C09G1/02C09K3/14H01L21/304H01L21/3105
CPCC09G1/02C09K3/1454H01L21/31053C09K3/1463C09K3/1436C01P2004/62C01P2006/12C01G25/00C01P2004/64C01P2006/10C01F17/235
Inventor 町井洋一小山直之西山雅也吉田诚人
Owner HITACHI CHEM CO LTD
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