Nano phosphide semconductor material hydrothermal synthesis preparing method
A technology of hydrothermal synthesis and phosphide, applied in the direction of phosphide, etc., to achieve the effect of simple preparation process, uniform particle size distribution and obvious quantum size effect
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Embodiment 1
[0027] Embodiment 1. Preparation of nano gallium phosphide
[0028] In an autoclave lined with polytetrafluoroethylene, add a KOH solution with a concentration of 20% by mass and 1 g of powdered Ga 2 o 3 , then add white phosphorus in excess of 2 times by stoichiometric ratio, then add 2g elemental I 2 , sealed the autoclave, and kept the temperature at 150° C. for 12 hours; the resulting product was washed twice with distilled water, placed in a vacuum oven, and dried at 80° C. for 4 hours to obtain 0.98 grams of gray powder (theoretical yield was 1.074 grams). Similarly, the same results were obtained by reacting at 120° C., 160° C., 180° C. and 200° C. for 20 hours, 10 hours, 8 hours and 6 hours respectively.
[0029] The product prepared in this example was analyzed and characterized by TEM and XRD. Figure 1 is The TEM photograph of present embodiment product, Figure 3 Curve 1 is the XRD test pattern of the product of this example, which proves that the product is gal...
Embodiment 2
[0031] Embodiment 2. Preparation of nano-indium phosphide
[0032] In an autoclave lined with polytetrafluoroethylene, add a 30% NaOH solution and 1 g of powdered In 2 o 3 , then add 30% excess white phosphorus according to the stoichiometric ratio, then add 2g elemental I 2 , sealed the autoclave, and kept the temperature at 150° C. for 12 hours; the resulting product was washed twice with distilled water, placed in a vacuum oven, and dried at 80° C. for 4 hours to obtain 0.96 grams of gray-black powder (theoretical yield was 1.05 grams). Under other conditions being the same, the reaction was changed to 120° C., 160° C., 180° C. and 200° C. for 20 hours, 10 hours, 8 hours and 6 hours respectively, and the same results could be obtained.
[0033] The product was characterized by TEM and XRD. Figure 2 is The TEM photograph of present embodiment product, Figure 3 Curve 2 is the XRD pattern of the product of this example, which proves that the product is indium phosphide, ...
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