Forming improved stabiity emissive layer from donor element in OLED device

A technology of stability and emission layer, applied in electrical components, electric solid-state devices, semiconductor devices, etc., can solve problems such as lowering stability, and achieve the effect of lowering working voltage, improving stability, and improving working stability

Inactive Publication Date: 2004-10-27

EASTMAN KODAK CO

48 Cites 1 Cited by

AI-Extracted Technical Summary

Problems solved by technology

Although this is a useful fabrication technique, EL devices containing emissive layers prepared by this method have r...

Method used

[0154] The device without the doped low work function metal organic layer (Example 2) had significantly shorter half-life and higher voltage than the device with the doped low work function metal organ...

Abstract

A method of forming an organic light-emitting device with improved stability including forming an anode over a substrate, providing a cathode spaced from the anode, and providing a donor element including light-emitting material and positioning such donor element in a material-transferring relationship with the substrate. The method further includes illuminating the donor element with radiation to cause the transfer of light-emitting material to deposit the light-emitting material to form an emissive layer over the anode, and forming an organic layer including an organic compound doped with a low work function metal or metal compound capable of acting as a donor dopant between the emissive layer and the cathode to lower the electron-injecting barrier from the organic layer into the emissive layer thereby improving the stability of the organic light-emitting device.

Application Domain

Electroluminescent light sourcesSolid-state devices +4

Technology Topic

Material transferFluence +7

Image

Examples

Experimental program(2)

Example Embodiment

[0134] Example 1 (Example of the present invention)

[0135] An OLED device meeting the requirements of the present invention and doped with an organic layer of a low work function metal was fabricated by the following method:

[0136] 1. Indium tin oxide (ITO) was vacuum deposited on a clean glass substrate to form a 34 nm thick transparent electrode.

[0137] 2. The above prepared ITO surface was treated with a plasma oxygen etch, followed by plasma deposition of a 1.0 nm layer of fluorocarbon polymer (CFx) as described in US-A-6,208,075.

[0138] 3. At about 10 -6 The substrate prepared above was further processed by vacuum deposition under torso vacuum to deposit 170 nm of 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPB) from a heated boat source. ) hole transport layer.

[0139] 4. The substrates prepared above were removed from the vacuum and exposed to air for about 5 minutes before being placed in a nitrogen oven.

[0140] 5. Prepare a donor substrate by vacuum coating 40 nm of chromium on a 75 micron polysulfone sheet.

[0141] 6. The donor substrate prepared above was further vacuum coated with 20 nm of 2-(1,1-dimethylethyl)-9 doped with 1.25% 2,5,8,11-tetra-tert-butylperylene (TBP) , 10-bis(2-naphthyl)anthracene (TBADN), followed by recoating with 0.8 nm NPB to obtain the donor element.

[0142] 7. Remove the donor element prepared above from the vacuum and expose the donor element to air for about 5 minutes before placing in the nitrogen oven.

[0143] 8. Place the above-mentioned donor element in a substance conversion relationship with the substrate of step 3 above, using a spacer to maintain the distance between the donor element and the substrate at a 75 micron gap.

[0144] 9. Use 755mJ/cm 2 A multi-band laser of energy irradiates the donor element to form a light emitting layer on the hole transport layer or substrate.

[0145] 10. Expose the above substrate to air for about 10 minutes before returning to vacuum.

[0146] 11. Vacuum deposition of a 35 nm electron transport layer of tris(8-quinolinolato)aluminum(III)(Alq) containing 1.2 vol % lithium (Alq:Li) on a substrate, the coating station comprising two for Alq and a heated boat source of lithium.

[0147] 12. A 220 nm cathode layer was deposited on the receptor element, the coating station comprising two separate tantalum evaporating dishes containing silver and magnesium, respectively. The cathode layer was magnesium and silver in a 10:1 volume ratio.

[0148] 13. The OLED device was then transferred to an oven for encapsulation.

Example Embodiment

[0149] Example 2 (comparative example)

[0150] OLED devices were fabricated using the method described in Example 1, except for step 11 (depositing the electron transport layer) as follows:

[0151] 11. Vacuum deposition of a 35 nm electron transport layer of tris(8-quinolinolato)aluminum(III) (ALQ) on a substrate, the coating station including a heating boat source.

[0152] result

[0153] Example

[0154] The device without the doped low work function metal organic layer (Example 2) had significantly shorter half-life and higher voltage than the device with the doped low work function metal organic layer (Example 1). Adding a lithium dopant to the electron transport layer increases the half-life by more than 2 times (Example 2 is more than Example 1), thus improving the stability of the device.

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Classification and recommendation of technical efficacy words

improve stability
Improve job stability

Agent delivering system comprised of microparticle and biodegradable gel with an improved releasing profile and methods of use thereof

InactiveUS6287588B1increase stabilityimprove stability

Owner:BTG INT LTD

Forming improved stabiity emissive layer from donor element in OLED device

A technology of stability and emission layer, applied in electrical components, electric solid-state devices, semiconductor devices, etc., can solve problems such as lowering stability, and achieve the effect of lowering working voltage, improving stability, and improving working stability

AI-Extracted Technical Summary

Problems solved by technology

Method used

Abstract

Image

Examples

Example Embodiment

Example Embodiment

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Description & Claims & Application Information

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