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Constituents of photoresistive agent of chemistry increased amplitude

A chemical amplification, photoresist technology, applied in the field of photoresist composition, can solve the problem of limiting the development space of VEMA polymer, achieve improved uniformity and precise resolution, not easy to pour, good hydrophilicity Effect

Inactive Publication Date: 2005-11-16
EVERLIGHT CHEMICAL INDUSTRIAL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the development space of VEMA polymers is limited.

Method used

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  • Constituents of photoresistive agent of chemistry increased amplitude
  • Constituents of photoresistive agent of chemistry increased amplitude
  • Constituents of photoresistive agent of chemistry increased amplitude

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0048] Regarding the preparation of the compound of formula (III), the following formula method can be used for synthesis, but not limited to the following synthesis:

[0049]

[0050] Take appropriate alcohols and pass through acetylene in the KOH / DMSO system, and keep stirring for one hour under sufficient pressure and temperature. After the solution is cooled, add water to dilute, extract, dry and concentrate to obtain light yellow naphthenic substituent vinyl ether compounds.

[0051] The aforementioned compound of formula (III) can be carried out copolymerization reaction with maleic anhydride, and the high molecular polymer prepared is the structure type of alternating copolymer (altemating copolymer), such as formula (IV)

[0052] R 1 =C n h 2n+1 (n=0~4), CF 3 Q=Alicyclic group

[0053] where R 1 for H or C 1 -C 4 Alkyl or trifluoromethyl (CF 3 ); Q is C 4 -C 12 Cycloalkane substituents.

[0054] The aforesaid high molecular polymer containing t...

preparation example 1

[0086] Synthesis of polymer formula (I-1a)

[0087] Add 30 ml of tetrahydrofuran (THF), 2.84 g of tert-butyl methacrylate, 3.92 g of maleic anhydride, and 5.04 g of cyclohexyl vinyl ether into the reactor, and then add Starter 2,2'-azobisisobutyl (AIBN) 4.6 grams, and heat up to about 50 ° C, after the reaction is complete, add 50 ml of tetrahydrofuran, and then pour the reaction product into a container containing 1 liter of isopropanol In the container, a white solid is precipitated, filtered and dried to obtain 9.43 grams of a high molecular polymer white powder of formula (I-1a), with a yield of 80%, measured by GPC, with a weight average molecular weight of 13,100, and a glass transition temperature Tg = 146°C.

preparation example 2～27

[0089] Synthesis of polymer formula (I-2a) to formula (I-9a), formula (I-1b) to formula (I-9b), and formula (I-1c) to formula (I-9c)

[0090] Repeat the steps of Preparation Example 1, and use different monomers or compositions to carry out polymerization to obtain polymers with different structures such as formula (I-2a) to formula (I-9a), formula (I-1b) to formula (I-9b), and formula (I-1c) to formula (I-9c), all are white powder. The synthesis results are shown in the table below.

[0091]The following are the techniques for the convenience of setting forth the invention. In the preparation example, the synthesis of the high molecular polymer is specifically cited as formula (I-1) to formula (I-9), and formula (II-1) to formula (II-8) as the main high Molecular platform (polymer platform) for illustration. See the above-mentioned formula (I-1) to formula (I-9), and formula (II-1) to formula (II-8) shown in the polymer platform item column in the following table:

[0092]...

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Abstract

A composition of chemical increased photoresistor is a high polymer of listed molecular formula in which R refers to H, alkyl of C1- C4 and ( CF3); R2 refers to H, alkyl of C1- C4 and ( CF3); R3 refers to acid sensing group of C4 - C12 branch or ring alkane; Q refers to ring alkyl of C4- C12 and X + Y + Z = 1. The prepared photoresistor can be used in microimaging process and it is especially good for microimaging process using light source with 193 nm wavelength.

Description

technical field [0001] The present invention relates to a photoresist composition, in particular to a chemically amplified photoresist composition containing a novel polymer. Background technique [0002] With the rapid increase of the integration level of semiconductor integrated circuits, the line width required by lithography technology is also getting smaller and smaller. Theoretically, in order to make the pattern resolution obtained by the lithography process better, a short-wavelength light source or an optical system with a larger numerical aperture can be used. Therefore, in order to meet the design rule of integrated circuits and facilitate the mass production of 1G byte DRAM, it is an inevitable trend to advance the line width of the optical lithography process to below 0.13 microns. However, the current KrF (248nm) excimer laser ( Excimer laser) is not suitable for the process of components below 0.13 microns, so the process below 0.13 microns will be carried ou...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004
Inventor 陈启盛蔡茜茜简镔廖信明
Owner EVERLIGHT CHEMICAL INDUSTRIAL CORPORATION