Method for preparing zinc oxide monodimension nano stick crystal film

Abstract

The present invention discloses the electric field aided process of preparing one dimensional nanometer ZnO crystal rod film. The process includes the following steps: dissolving Zn(NO3)2.6H2O and NaOH in water and stirring homogeneously; constant potential depositing in a three-electrode chemical deposition system with conducting glass of coated ZnO sol as anode, platinum sheet as counter electrode and saturated Ag/AgCl electrode as reference electrode, inside water bath at 30-90 deg.c and with external voltage of 500-1300 mV; and taking out the lining, washing, stoving in an oven to obtain the one dimensional nanometer ZnO crystal rod film. Applying and regulating the external electric field can control the growth form of ZnO and raise the growth speed effectively. The present invention may be applied in making LED, light detector, photosensitive diode, gas-sensitive diode, solar cell, etc.

Description

Technical field [0001] The invention relates to a method for preparing a ZnO film, in particular to an electric field assisted method for preparing a one-dimensional ZnO nanorod crystal film. Background technique [0002] Zinc oxide (ZnO) is an important wide-bandgap semiconductor functional material, with a band gap width of 3.3 eV at room temperature and an exciton binding energy as high as 60 meV. It has strong free exciton transition luminescence in the ultraviolet band and is rich in raw material resources. , Low price, non-toxic, suitable for the epitaxial growth of thin films, and has a wide range of application prospects in the field of information and optoelectronics. It is another research hotspot in the world after GaN in recent years. Due to the unique optical, electrical and acoustic properties of one-dimensional ZnO array nanomaterials, it has broad application prospects in light-emitting diodes, photodetectors, photodiodes, gas sensors...

AI Technical Summary

Problems solved by technology

[0004] The current main problem of this method is: due to the equilibrium process of dissolution-recrystallization during the reaction, the growth of ZnO rods will stagnate after reaching a certain length, which is quite unfavorable in application; at the same time, the growth shape of nanorods is relatively large. To a certain extent, it is affected by the surface state of the substrate, and the surface state of the substrate is greatly affected by the objective environment (such as the humidity of the air, etc.), which is difficult to control, so it is difficult to obtain an array of nanorods growing upright.

Therefore, the growth stagnation of nanorods in the late stage of the reaction and the difficulty in controlling the growth morphology of nanorods, that is, the difficulty in obtaining vertically grown nanorod arrays, are the main shortcomings of the prior art.