Method for making GaN-based LED with back hole structure

Abstract

Disclosed a manufacturing method of gallium nitride light-emitting diode in the back hole structure comprises: N type gallium nitride layer which sequentially extends on the insulating substrate of blue stone, multiple quantum trap luminous active region and a P type gallium nitride layer; processing photo-etching on the N type gallium nitride layer to preparing the P type ohm contact electrode and N type ohm contact electrode; the scribing divides the tube core of epitaxial slice into single tube core; forming a silicon dioxide insulating dividing layer on the two surfaces of silicon slice while preparing the metal electrode on the right face and light etching the back-hole pattern on the back surface; forming the back holes; utilizing the thick paste to light etch and electric plate the protruding point pattern on the right face of silicon slice; preparing a layer of alloy with lower fusible point on the back of silicon to form the tube base; connecting the back of tube base and the tube housing via heat sink; welding the tube core and the right surface of tube base via the metal protruding point, educing the N electrode of light-emitting diode from the metal electrode made on the right surface of silicon slice and educing the P electrode of light-emitting diode from the heat sink back surface of tube housing.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a method for manufacturing a GaN-based light-emitting diode with a back hole structure. Background technique [0002] With the breakthrough of the third-generation semiconductor material gallium nitride and the advent of blue, green, and white light-emitting diodes, following the microelectronics revolution triggered by semiconductor technology, a new industrial revolution-the lighting revolution, whose symbol is the semiconductor Lamps will gradually replace incandescent and fluorescent lamps. Semiconductor lamps use light-emitting diodes (LEDs) as new light sources. Under the same brightness, the power consumption is only 1 / 10 of that of ordinary incandescent lamps, but the life span can be extended by 100 times. Because semiconductor lighting (also known as solid-state lighting) has the advantages of energy saving, long life, maintenance-free, and environmental protectio...

AI Technical Summary

Problems solved by technology

Although this method solves the problem of heat dissipation to a certain extent, its thermal resistance is still very large, forming a bottleneck that hinders the realization of high-power light-emitting diodes used in general lighting in the future.

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