Supersonic spraying method for preparing vanadium pentoxide thin film

A vanadium pentoxide and thin-film ultrasonic technology, which can be applied to spray devices, liquid chemical plating, liquid spray devices, etc., can solve problems such as complex processes, and achieve simple preparation process operations, easy control of process parameters, and abundant raw material sources. Effect

Inactive Publication Date: 2006-05-24
HUNAN NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The latter method is more complicated, and it is easy to introduce other chemical substances into the film

Method used

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  • Supersonic spraying method for preparing vanadium pentoxide thin film
  • Supersonic spraying method for preparing vanadium pentoxide thin film
  • Supersonic spraying method for preparing vanadium pentoxide thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] (1) Select glass as the substrate, ultrasonically clean with acetone, methanol, and deionized water successively, dry, and set aside; (2) Get excessive ammonium metavanadate powder, be dissolved in 100 milliliters of concentration and be the ammoniacal liquor of 25wt%, Stir fully, let it stand for 24 hours, filter, and configure it into a saturated ammonia solution of ammonium metavanadate at 25°C; (3) heat the substrate to 350°C, adjust the distance from the nozzle of the ultrasonic atomizer to the surface of the substrate to be 4 cm, and the mist The conversion rate is 1ml / min, the ultrasonic frequency is 1.3MHz, and the gas flow rate is 0.05m 3 / hour, the deposition time is controlled to 6 minutes, that is, V 2 o 5 film. figure 1 Shown is X-ray diffraction, indicating that the V prepared by this method 2 o 5 The film has an orthorhombic crystal structure, figure 2 The SEM surface topography is shown.

Embodiment 2

[0016] Option to plate SnO 2 The glass of thin film is made substrate, and cleaning method is the same as embodiment 1; Get excessive ammonium metavanadate powder, be dissolved in 100 milliliters of concentrations and be the ammoniacal liquor of 20wt%, fully stir, leave standstill 24 hours, filter, be configured into 25 ℃ partial Ammonium vanadate saturated ammonia solution; the substrate temperature is controlled at 450°C, the distance from the ultrasonic atomizer nozzle to the substrate surface is adjusted to 5 cm, the atomization rate is 4 ml / min, the ultrasonic frequency is 1.5 MHz, and the gas flow rate is 0.2 meters 3 / hour, and the deposition time is controlled to be 10 minutes. V 2 o 5 The film has an orthorhombic crystal structure, image 3 The SEM surface topography is shown.

Embodiment 3

[0018] Select a silicon chip as the substrate, and the cleaning method is the same as in Example 1; take 0.5 grams of ammonium metavanadate powder, dissolve it in 100 milliliters of ammonia water with a concentration of 10 wt%, stir and dissolve it fully, leave it to stand for 20 hours, and filter; Control at 550°C, adjust the distance from the ultrasonic atomizer nozzle to the substrate surface to 2 cm, the atomization rate to 8 ml / min, the ultrasonic frequency to 1.6 MHz, and the gas flow rate to 0.5 m 3 / hour, and the deposition time is controlled to be 10 seconds. V produced in this example 2 o 5 The film has an orthorhombic crystal structure, Figure 4 Shown is the surface topography of the scanning electron microscope. The surface has a spherical structure of pine nuts. The surface is rich in layered wrinkle structure and has a large specific surface area. It is very suitable for the catalyst industry and as an electrode material for high-capacity lithium batteries.

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Abstract

The invention discloses a method to manufacture vanadium pentexide ultrasonic spraying that includes the following steps: ultrasonic, drying the acetone, methanol, and deionized water; dissolving ammonium metavanadate ammonia into 1wt%-25wt% ammonia solution, to make ammonium metavanadate water solution, stewing and filtering; using ultrasonic nebulizer to make the ammonium metavanadate into spraying particle, sparying on the 150-650 degree centigrade hot underlay, depositing for 10s-30min, the condensation rate is 1ml / min-20ml / min, gas velocity flow 0.05 cubic meter per hour-2 cubic meter per min, the ultrasonic wave frequency is 1.3-2.5 MHz. The invention is low cost, wide range selective underlay, easy to operate.

Description

technical field [0001] The invention relates to a method for preparing a vanadium pentoxide thin film, in particular to a method for preparing a vanadium pentoxide thin film by an ultrasonic spraying method. Background technique [0002] Vanadium pentoxide thin films are widely used in electrochromic devices, anti-counterfeiting materials, optical switches and high-capacity lithium battery cathode materials and other fields. At present, the preparation methods of vanadium pentoxide thin films mainly include: magnetron sputtering, thermal evaporation, vacuum deposition, pulsed laser deposition and sol-gel method, etc. The first few preparation methods require high vacuum, large-scale equipment, and high production costs. The latter method is more complicated and it is easy to introduce other chemical substances into the film. Contents of the invention [0003] The object of the present invention is to provide ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/12B05B17/06C23C18/04
Inventor 羊亿黄岳文
Owner HUNAN NORMAL UNIVERSITY
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