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Method for producing germanium-silicon thin-membrane materials on insulator

A technology of silicon-on-insulator and thin-film materials, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as insufficient high-speed performance, low power consumption of germanium-silicon devices, and no obvious improvement in radiation resistance and high temperature resistance. The effect of low cost and simple process route

Inactive Publication Date: 2006-05-31
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, compared with bulk silicon devices, silicon germanium devices have no obvious improvement in low power consumption, radiation resistance, high temperature resistance, etc.
Silicon-on-insulator (SOI) technology is an ideal platform for the development of new integrated circuits such as low power consumption, radiation resistance, high temperature resistance, and high integration. However, traditional silicon-on-insulator circuits and devices are not separated from bulk silicon materials in essence. Physical performance limitations, there is a lack of high-speed performance

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  • Method for producing germanium-silicon thin-membrane materials on insulator
  • Method for producing germanium-silicon thin-membrane materials on insulator

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[0022] Please refer to FIG. 1 and FIG. 2a-2d at the same time. The technical features of the present invention will be further described below in conjunction with specific growth processes.

[0023] The present invention cuts the φ100-150mm SOI material prepared by the oxygen injection isolation method (SIMOX) into a φ38mm wafer with a laser cutting machine as a substrate, and uses the silicon wafer cleaning method commonly used in the integrated circuit process to strictly clean the SOI substrate surface. Chemical cleaning and thinning treatment, so that the thickness of the top silicon film of the SOI substrate to be used is 15-30nm. The structure of the SOI substrate material is shown in Figure 2a.

[0024] Then enter the sampling chamber 10 , pass through the valve 1 and the valve plates 2 and 4 , with the help of the guide rail 3 , pass through the analysis chamber 9 and put it on the substrate holder 5 of the growth chamber 8 . The vacuum in the growth chamber 8 at room...

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Abstract

A process for preparing the GeSi alloy film on an insulator includes such steps as using the molecular beam epitaxial equipment to grow the epitaxial GeSi alloy film on Si substrate on the insulator, high-temp annealing in the quartz tube type annealing furnace full of oxidizing atmosphere, and removing the oxidized layer from the surface of material by wet-type chemical corrosion method or chemico-mechanical polishing method. The resultant material can be used as the substrate for growing the epitaxial strain silicon material on insulator (sSOI).

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for preparing a silicon germanium film material on an insulator. Background technique [0002] Silicon germanium devices have achieved great success in the field of high-speed device applications such as mobile communications and microprocessor chips, showing a trend of competing with gallium arsenide devices. However, compared with bulk silicon devices, silicon germanium devices have no obvious improvement in performance such as low power consumption, radiation resistance, and high temperature resistance. Silicon-on-insulator (SOI) technology is an ideal platform for the development of new integrated circuits such as low power consumption, radiation resistance, high temperature resistance, and high integration. However, traditional silicon-on-insulator circuits and devices are not separated from bulk silicon materials in essence. Due to the physical performance ...

Claims

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Application Information

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IPC IPC(8): H01L21/20H01L21/84
Inventor 刘超高兴国李建平曾一平
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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