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Rare earth polishing liquor for organic alkaline corrosive medium

A corrosive medium and rare earth polishing technology, which is applied in the field of polishing liquid, can solve problems such as chip reliability reduction, pH instability, and partial punch-through effect of devices

Active Publication Date: 2006-07-26
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When alkaline substances are added to the system, in the alkaline polishing solution, the alkali metal ions in the strong alkali sodium hydroxide or potassium hydroxide will enter the substrate or dielectric layer during the polishing process, which will easily cause the local punch-through effect of the device , Leakage current increase and other effects, so that the reliability of the chip operation is reduced, causing device failure
Inorganic base NH 3 ·H 2 The disadvantage of O as a pH modulator in the polishing solution is that it is easy to volatilize and pollute the ultra-clean room, the pH is unstable, and the buffering effect is also less

Method used

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  • Rare earth polishing liquor for organic alkaline corrosive medium
  • Rare earth polishing liquor for organic alkaline corrosive medium
  • Rare earth polishing liquor for organic alkaline corrosive medium

Examples

Experimental program
Comparison scheme
Effect test

example 1-4

[0036] Example 1-4: Dissolve solid ceria powder in distilled water at normal temperature and pressure to form a solution of 0.5% to 5% (weight percent), and add 0.05% and 0.10% by weight to this solution respectively. , 1.0% organic base triethanolamine to adjust the pH value of the solution, and the mixed solution was stirred evenly to obtain the polishing solution. The rare earth polishing solution of this group was subjected to the same polishing test as the comparative example, and the test results are shown in Table 1.

[0037] Component content and test results

example 5-8

[0038] Example 5-8: At normal temperature and pressure, according to the steps of Example 1, first prepare a solution containing 2% cerium dioxide powder and 0.10% organic base triethanolamine, and then add 0%, 0.25%, 0.5% by weight , 1.0% oxidant potassium ferricyanide, stir the mixture evenly to get the polishing solution of this group. Then the polishing test was carried out as before, and the test results are listed in Table 2.

[0039] Component content and test results

example 9-12

[0040] Example 9-12: At normal temperature and pressure, the steps of Example 2 are used to prepare a solution of 2% cerium oxide powder, 0.10% triethanolamine, and 0.25% potassium ferricyanide, and the weight percentage Add 5%, 10%, and 15% pro-oxidant hydrogen peroxide into the mixed solution, and stir the mixed solution evenly to obtain the polishing solution of this group. The polishing test is the same as before, and the representative results are listed in Table 1.

[0041] Component content and test results

[0042] The prepared polishing liquid of each example compares with the comparative example polishing liquid that formula keeps secret, and finds that the polishing roughness when only having basic composition nano-abrasive and organic base in the polishing liquid example 1-4 of the present invention is 0.733-0.757nm, slightly inferior The polishing roughness of the comparative example is 0.727nm. However, in the polishing process of monocrystalline silico...

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PUM

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Abstract

The invention provides a rare earth polishing liquid of organic base corrosive medium, which comprises (by weight percent) cerium dioxide 0.5-5%, triethanolamine 0.05-1.0% and balancing H2O. The polishing liquid can also contain 0.25-1.0% of potassium ferricyanide as the oxidizing agent, or 5-15wt% of hydrogen peroxide.

Description

1. Technical field [0001] The invention relates to a polishing liquid, in particular to a polishing liquid used for chemical mechanical polishing of the surface of a single crystal silicon wafer. 2. Background technology [0002] Chemical mechanical polishing (CMP for short) is the most important global planarization technology at present, and it is also the only technology for global planarization of the surface of the interconnection lines in the chip. The formulation of high-quality and high-efficiency polishing fluid is the focus and key of this technology, which requires fast polishing rate, good polishing uniformity and convenient cleaning after polishing. Foreign countries have paid attention to the research and development of this technology since the early 1980s. At present, there are molding products of polishing liquid, but its composition formula has always been a commercial secret, and it has not been disclosed and belongs to confidential technology. At present...

Claims

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Application Information

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IPC IPC(8): C09K3/14H01L21/304
Inventor 聂祚仁梅燕韩业斌邹景霞王艳丽
Owner BEIJING UNIV OF TECH
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