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Method for preparing silicon carbide wafer

A technology of silicon carbide and wafers, which is applied in the field of preparation of silicon carbide wafers, can solve the problems of few manufacturers, failure to realize industrialized production of silicon carbide wafers, and few, etc., and achieve low cost, shorten synthesis time, and save energy Effect

Inactive Publication Date: 2006-09-13
戴长虹 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the many shortcomings of the conventional heating synthesis method, silicon carbide wafers have not only failed to achieve industrial production in China, but also rarely studied in the laboratory.
Although the industrial production of silicon carbide wafers has been realized abroad, there are very few manufacturers

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Using white carbon black and carbon black as raw materials, the ratio is SiO 2 :C=1.5:1, without adding any catalyst. Accurately weigh carbon black and white carbon black, place them in a ball mill tank, use ethanol as the medium, and grind and mix for 8 hours. After the uniformly mixed raw materials are dried, they are put into a double heating furnace. First, the external heating system is energized to increase temperature, the heating rate is 5°C / min, and the temperature rises to 1000°C; then the internal heating system is energized to increase the temperature, the heating rate is 3°C / min, and the temperature rises to 1850°C and then the temperature is constant; after 5 hours of constant temperature, the inside and outside The heating system is powered off at the same time to cool down, and it is naturally cooled to room temperature. After the reaction material is discharged from the furnace, the unreacted carbon black is removed by a flotation method to obtain silicon c...

Embodiment 2

[0014] White carbon black and activated carbon are used as raw materials, boric acid is used as a promoter, and the raw material ratio is SiO 2 :C=1.25:1, boric acid is 15% of the silicon content. Others are the same as in Example 1, the external heating temperature is 1200°C, the internal heating temperature is 2000°C, and the constant temperature time is 3h. The yield of silicon carbide wafers is 18%, the diameter of the wafers is 20-50 μm, and the thickness is 3-10 μm.

Embodiment 3

[0016] Using silica gel and carbon black as raw materials, the ratio is SiO 2 :C=1:1, adding 12% of cobalt salt as a catalyst. Others are the same as in Example 1, the external heating temperature is 1100°C, the internal heating temperature is 1900°C, and the constant temperature time is 7 hours. The yield of silicon carbide wafers is 24%, the diameter of the wafers is 20-30 μm, and the thickness is 2-8 μm.

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Abstract

The invention relates to a manufacturing method for silicon carbide wafer that uses double heating technology to heating the raw material to the reacting temperature. The raw material is the heat receiver of the external heating system and the heating element of the inner heating system. It decreases the manufacture cost of the high temperature furnace, improves reliability, and prolongs useful life of the high. The method has the advantages of low manufacturing temperature, short compounding time, low wafer manufacturing cost, high quality, etc.

Description

Technical field [0001] The invention relates to a method for preparing silicon carbide wafers, in particular to a method for preparing silicon carbide wafers by dual heating technology. Background technique [0002] The silicon carbide wafer is a fine flake single crystal with a diameter of 3-300μm and a thickness of 0.5-15μm. Compared with whiskers, wafers have the advantages of lower price, high purity, good thermal stability and fewer defects, so wafers are considered to be the most attractive alternative to whiskers. Compared with whisker toughening, wafer toughening has the following advantages: wafers have good dispersibility and fluidity, and are easier to be evenly dispersed in the matrix. The composite material can have a high amount of addition (10-70%), And the effect of compounding with the matrix is ​​better than that of spherical particles. The size of the wafer is large, and the effect of the reaction between the surface and the substrate is not large, and the crac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B29/64
Inventor 戴长虹张宝宝孟永强
Owner 戴长虹