Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for direct extraction of indium from fluosilicic acid slurry

A fluorosilicic acid and extraction technology, applied in the field of hydrometallurgy, can solve the problem of indium being unable to be recovered, and achieve the effects of high comprehensive utilization value of resources, less pollution and lower cost

Inactive Publication Date: 2006-11-22
云南锡业集团有限责任公司
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the method of extracting indium from the weak acid system has not been practically applied before, there was a situation that indium in the weak acid system could not be recovered.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Follow the steps below:

[0016] Extraction: with organic extractant P 204 with 200 # P 204 25% of the extracted organic phase, directly extract indium from the indium-containing fluorosilicic acid solution, the extraction conditions are: the ratio of the organic phase to the water phase is 1:2.5; the mixing time is 4 minutes, the temperature is 38 ° C, and the settling time is 9 minutes, four-stage countercurrent extraction, the extraction rate of indium was 93.16%. The raffinate (fluosilicic acid solution) is returned to the original system for continued use.

[0017] Stripping: the extracted indium-rich organic phase is stripped with an HCl solution with a concentration of 7mol / L as the stripping solution. The stripping conditions are: the ratio of the organic phase to the stripped phase (hydrochloric acid) is 2:1; , The mixing time is 8 minutes, and the settling time is 12 minutes. Three-stage countercurrent stripping, the stripping rate of indium is 97....

Embodiment 2

[0021] Follow the steps below:

[0022] Extraction: with organic extractant P 204 Formulated with 200# gasoline containing P 204 30% of the extracted organic phase, directly extract indium from the indium-containing fluosilicic acid solution, the extraction conditions are: the ratio of the organic phase to the aqueous phase is 1:4; the mixing time is 5 minutes, the temperature is 35 ° C, and the settling time is 10 minutes. With four-stage countercurrent extraction, the extraction rate of indium is 94.23%. The raffinate (fluosilicic acid solution) is returned to the original system for continued use.

[0023] Stripping: the extracted indium-rich organic phase is stripped with an HCl solution with a concentration of 6mol / L. The stripping conditions are: the ratio of the organic phase to the stripped phase (hydrochloric acid) is 2:0.9, at room temperature, The mixing time was 8 minutes and the settling time was 10 minutes. Three-stage countercurrent stripping, the st...

Embodiment 3

[0027] Follow the steps below:

[0028] Extraction: with organic extractant P 204 Formulated with 200# gasoline containing P 204 28% of the extracted organic phase, directly extract indium from the indium-containing fluorosilicic acid solution, the extraction conditions are: the ratio of the organic phase to the aqueous phase is 1:5; the mixing time is 5 minutes, the temperature is 40 ° C, and the settling time is 10 minutes, four-stage countercurrent extraction, the extraction rate of indium was 91.32%. The raffinate (fluosilicic acid solution) is returned to the original system for continued use.

[0029] Stripping: the extracted indium-rich organic phase is stripped with an HCl solution with a concentration of 8mol / L as the stripping solution. The stripping conditions are: the ratio of the organic phase to the stripping phase (hydrochloric acid) is 2:0.8, at room temperature, The mixing time was 10 minutes, and the settling time was 15 minutes. Three-stage counte...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an indium extraction method from fluosilicic acid ore solution, which comprises the following steps: matching P204 and diluent into organic extraction liquid; extracting indium in the fluosilicic acid solution with tin, lead, iron and indium; adopting alcaine as back extraction liquid with indium to proceed back extraction; neutralizing to strip impurity; replacing to obtain sponge indium; casting to produce metal indium. The invention is easy to operate with little erosion and pollution, which can recycle metal indium effectively.

Description

technical field [0001] The invention belongs to the hydrometallurgical technology of nonferrous metal metallurgical technology, and specifically relates to a method for extracting indium from a fluorosilicic acid solution containing tin, lead, iron, indium and other metals. Background technique [0002] The abundance of indium in the earth's crust is 0.1×10 -6 , similar to silver. While indium is not a particularly rare element, its enrichment is so low that it cannot be mined as a single indium ore. Therefore, the products are almost extracted from the by-products of smelting other metals. Such as recovery from the processing of sphalerite, galena, kesterite, cassiterite and complex polymetallic copper ores. [0003] Due to the chemical properties of indium, it is widely distributed in the products of various processes in metallurgical factories. When it coexists with non-volatile metals (such as tin and copper), indium tends to be enriched in smoke; with volatile metals...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C22B3/06C22B3/26C22B58/00
CPCY02P10/20
Inventor 余曙明宋兴诚
Owner 云南锡业集团有限责任公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com