A processing method for MEMS micro generator based on inorganic electret

Abstract

The invention relates to a method for processing MEMS micro generator based on inorganic electret. Wherein, it comprises (1), light etching the surface of inorganic substrate, splashing metal electrode, removing it to obtain lower metal electrode; (2), depositing inorganic electret film on the surface of substrate, via etching and corrosion to form electret pattern; (3), etching the surface of silicon substrate, corroding into shallow groove, pouring boron into silicon surface; (4), combining the silicon substrate with inorganic substrate, while the surface with shallow groove of silicon substrate is opposite to the surface with electret pattern of inorganic substrate; (5), etching the upper silicon substrate to form upper electrode plate, while the etching part is relative to the position of electret pattern; (6), pouring charge into inorganic electret film, to obtain said MEMS micro generator. The invention support batch production with wide application.

Description

A method of processing MEMS micro-generators based on inorganic electrets technical field The invention relates to a processing method for an electret micro-generator, in particular to a method for processing an inorganic electret-based MEMS micro-generator. Background technique Micro-Electro-Mechanical Systems (hereinafter referred to as MEMS) is an emerging multidisciplinary high-tech field, which has shown great potential in promoting the development of national economy and productivity, and consolidating national security. The application of MEMS technology has made it possible to miniaturize various systems. At the same time, the stable, efficient and miniaturized energy supply corresponding to MEMS devices has also become a technical challenge. However, the traditional energy supply method has been difficult to meet the requirements of low cost, practicality and mass production of MEMS technology, especially for some implanted or distributed MEMS devices, the replace...

AI Technical Summary

Problems solved by technology

Although chemical vapor deposition is a commonly used thin film preparation method in semiconductor technology, the atmosphere and process conditions are different from the equipment commonly used in semiconductor technology, and the applicable polymer materials are limited. high internal stresses in the film

Spin coating is a common method for preparing soluble organic media materials, but due to the thermal curing process, there may be swelling problems, which can cross-link the polymer or convert it into an insoluble material; in addition, the purity of the film and the crystal plate Contamination is also an important disadvantage of the spin-coating method

Another common method is to directly stick the polymer film on the device structure processed by the bulk silicon process. The disadvantage of this method is that the flatness and uniformity are poor, and MEMS processing can no longer be performed on it. The automation of the product, Industrial production has created difficulties

From the perspective of process compatibility, polymer materials are usually highly corrosion-resistant and difficult to form patterns

However, the high temperature resistance is poor, and the softening temperature is generally around 100°C, which cannot withstand other higher temperature processing processes, which hinders further processing and pattern formation.

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