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Ring-shaped magnetic multi-layer film having metallic core and method for making same and use

A multi-layer film, metal core technology, applied in the application of magnetic film to substrate, multi-layer film of spin exchange coupling, magnetic layer, etc.

Inactive Publication Date: 2011-05-04
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the geometric structure of memory cells (such as bit layers and other pinning layers) used in the prior art adopts non-closed structures, such as rectangles, ellipses, etc., this structure will lead to high density and small size memory cells. Larger demagnetization field and shape anisotropy, this defect will undoubtedly increase the reversal field and power consumption of the free layer, and also bring many adverse effects on the uniformity and consistency of the magnetoelectric properties of the memory cell, And it brings a lot of structural complexity to the design and preparation of the memory unit. For example, in order to reduce the demagnetization field, a sandwich composite bit layer and a bottom pinning layer are generally used.

Method used

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  • Ring-shaped magnetic multi-layer film having metallic core and method for making same and use
  • Ring-shaped magnetic multi-layer film having metallic core and method for making same and use
  • Ring-shaped magnetic multi-layer film having metallic core and method for making same and use

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] Example 1. Preparation of non-pinning ring-shaped magnetic multilayer film containing metal core by micromachining method

[0067] Using high-vacuum magnetron sputtering equipment in the 1mm thick SiO cleaned by conventional methods 2 On the / Si substrate, the lower buffer conductive layer Ru with a thickness of 5nm, the hard magnetic layer (HFM) Co with a thickness of 3nm, the intermediate layer (I1) Cu with a thickness of 1nm, and the soft magnetic layer (SFM) with a thickness of 1nm Co and a cap layer Ru with a thickness of 4 nm. The growth conditions of the above-mentioned magnetic multilayer film: prepared vacuum: 5×10 -7 Pa; high-purity argon gas pressure for sputtering: 0.07 Pa; sputtering power: 120 watts; sample holder rotation rate: 20rmp; growth temperature: room temperature; Speed; when depositing hard magnetic layer and soft magnetic layer, an induced magnetic field of 50Oe should be added. The deposited magnetic multilayer film adopts the micro-processi...

Embodiment 2

[0068] Example 2. Using insulator micron, submicron or nanoparticle mask method to prepare non-pinning annular metal core-containing magnetic multilayer film

[0069] Using high-vacuum magnetron sputtering equipment in the 0.3mm thick SiO cleaned by conventional methods 2 On the Si substrate, a lower buffer conductive layer Ta with a thickness of 50nm is sequentially deposited, and a layer of SiO with a diameter of 100nm is dispersed on the lower buffer conductive layer. 2 Insulator micron, submicron or nano particles, and then use high vacuum magnetron sputtering equipment to sequentially grow a hard magnetic layer (HFM) Co with a thickness of 20nm 75 Fe 25 , an intermediate layer (I1) MgO with a thickness of 10 nm, a soft magnetic layer (SFM) Co with a thickness of 10 nm 75 Fe 25 and a capping layer Ta with a thickness of 10 nm. The growth conditions of the above-mentioned magnetic multilayer film: prepared vacuum: 5×10 -7 Pa; high-purity argon gas pressure for sputteri...

Embodiment 3

[0070] Example 3. Preparation of a pinned ring-shaped magnetic multilayer film containing a metal core using a micromachining method

[0071] Using high-vacuum magnetron sputtering equipment in the 0.8mm thick SiO cleaned by conventional methods 2 On the Si substrate, the lower buffer conductive layer Cr with a thickness of 25 nm, the antiferromagnetic pinning layer (AFM) IrMn with a thickness of 10 nm, and the pinned magnetic layer (FM1) Co with a thickness of 3 nm were sequentially deposited. 90 Fe 10 Then deposit 1nm of Al, and the insulating layer formed by plasma oxidation for 50 seconds is used as the intermediate layer (I2); on the intermediate layer, a free soft magnetic layer (FM2) Co with a thickness of 1nm is sequentially deposited. 90 Fe 10 and a capping layer of Cu with a thickness of 2 nm. The growth conditions of the above-mentioned magnetic multilayer film: prepared vacuum: 5×10 -7 Pa; high-purity argon gas pressure for sputtering: 0.07 Pa; sputtering power...

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Abstract

This invention relates to a circular metal-core magnetic multi-layer membrane, comprising each layer of a conventional magnetic multi-layer membrane, which characterized with: the cross section of the said magnetic multi-layer membrane takes on the closed circle shape, the circle's inner diameter being 10-100000nm, outer diameter being 20-200000nm; it also includes a metal core locating in the geometric center of the circular multi-layer membrane, the metal core's diameter being 5-50000nm. In accordance with the classification of the forming materials, the circular metal-core magnetic multi-layer membrane of the invention includes the circular metal-core magnetic multi-layer membrane without pinning and the circular metal-core magnetic multi-layer membrane with pinning, and it can be prepared through micro-processing method or insulator micron, submicron or nano-particles masking method. The circular metal-core magnetic multi-layer membrane of the invention has no fading magnetic field, weak shape anisotropy, and it can be widely used in various devices with the core of magnetic multi-layer membrane, such as magnetic random access memory, computer magnetic heads, magnetic-sensing sensors, etc.

Description

technical field [0001] The invention relates to a ring-shaped magnetic multilayer film containing a metal core, its preparation method, and its application in devices. Background technique [0002] Since Baibich et al first observed the giant magnetoresistance (Giant Magneto Resistance, GMR) effect in the magnetic multilayer film system in the late 1980s, the research on the magnetic multilayer film system has been a topic of general concern to researchers. Because the GMR effect has a high magnetoresistance ratio, it can be widely used in magnetoresistance sensors, magnetic recording and reading heads, and other fields. Devices made of GMR not only have excellent characteristics such as high sensitivity, small size, and low power consumption, but can also bring many new features such as radiation resistance and non-volatile information storage. In particular, the application of the GMR effect to magnetic recording and reading heads has brought a profound revolution to the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/15G11C11/16H01F10/32H01F10/12H01F41/14H01L43/08H01L43/12G11B5/39B32B1/08B32B33/00H10N50/01H10N50/10
Inventor 马明韩秀峰姜丽仙韩宇男覃启航魏红祥
Owner INST OF PHYSICS - CHINESE ACAD OF SCI