Exposure apparatus, exposure method using the same, and method of manufacture of circuit device

a technology of exposure apparatus and exposure method, which is applied in the direction of microlithography exposure apparatus, printers, instruments, etc., can solve the problems of reducing laser output, reducing laser output, and difficult chromatism of projection optical system upon illumination ligh
US20010043321A1Inactive Publication Date: 2001-11-22NIKON CORP
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
NIKON CORP
Publication Date
2001-11-22
Estimated Expiration
Not applicable · inactive patent

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Abstract

A reflective member is fixedly or movably provided near the pupil plane of a projection optical system with which a projection exposure apparatus is equipped. A collimated measuring beam with an exposure wavelength is incident from the object plane side or image plane side of the projection optical system, and the intensity of the beam reflected by the reflective member is detected photoelectrically to measure a value corresponding to the attenuation factor (transmissivity or reflectivity) of the projection optical system or the variation with time of the attenuation factor (transmissivity or reflectivity) of the projection optical system. In accordance with the measurement results, the exposing conditions when a photosensitive substrate is exposed are corrected to avoid the deterioration of the exposure control precision due to the variation of the attenuation factor (transmissivity variation or reflectivity variation) which is caused in the projection optical system and illumination optical system of a projection exposure apparatus which uses ultraviolet illumination light.
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Description

[0001] The present invention relates to an exposure apparatus for use in a lithography process in a production line for manufacturing semiconductor devices, liquid crystal display devices and an exposure method using such exposure apparatus. The present invention also relates to a method for manufacturing circuit devices for use in forming electronic circuit devices on a semiconductor substrate (wafer), glass substrate, and so on.BACKGROUND TECHNOLOGY

[0002] Recently, at plants for manufacturing semiconductor devices such as super LSIs and so on, developments for mass-producing D-RAMs (memory chips), processor chips and the like, having a degree of integration and a fineness of a class of 256 Mbits on a large scale have been carried out extensively with great effort. As developments advance, exposure apparatuses for use in a next-generation lithography process (representatives being processes for coating a resist, exposing, developing resist, etc.) are also required to have a higher ...

Claims

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