Vertical-type semiconductor device

a semiconductor device and vertical-type technology, applied in the direction of semiconductor devices, electrical equipment, transistors, etc., can solve the problems of difficult control of mos transistors by gates, leakage current properties and threshold voltages in vertical-type pillar transistors formed in each of the semiconductor patterns, and difficult to ensure electrical properties of vertical-type pillar transistors. , to achieve the effect of high performan
US20090302377A1Active Publication Date: 2009-12-10SAMSUNG ELECTRONICS CO LTD
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
SAMSUNG ELECTRONICS CO LTD
Publication Date
2009-12-10

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Abstract

In a vertical-type semiconductor device, a method of manufacturing the same and a method of operating the same, the vertical-type semiconductor device includes a single-crystalline semiconductor pattern having a pillar shape provided on a substrate, a gate surrounding sidewalls of the single-crystalline semiconductor pattern and having an upper surface lower than an upper surface of the single-crystalline semiconductor pattern, a mask pattern formed on the upper surface of the gate, the mask pattern having an upper surface coplanar with the upper surface of the single-crystalline semiconductor pattern, a first impurity region in the substrate under the single-crystalline semiconductor pattern, and a second impurity region under the upper surface of the single-crystalline semiconductor pattern. The vertical-type pillar transistor formed in the single-crystalline semiconductor pattern may provide excellent electrical properties. The mask pattern is not provided on the upper surface of the single-crystalline semiconductor pattern in the second impurity region, to thereby reduce failures of processes.
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Description

RELATED APPLICATION

[0001] This application claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2008-0052368, filed on Jun. 4, 2008 in the Korean Intellectual Property Office (KIPO), the contents of which are herein incorporated by reference in their entirety.BACKGROUND

[0002] 1. Field

[0003] Example embodiments relate to a vertical-type semiconductor device, a method of manufacturing the vertical-type semiconductor device and a method of operating the vertical-type semiconductor device. More particularly, example embodiments relate to a semiconductor device having a vertical-type pillar transistor suitable for a cell array structure, a method of manufacturing the semiconductor device and a method of operating the semiconductor device.

[0004] 2. Description of the Related Art

[0005] Generally, as semiconductor devices become highly integrated, dimensions of active regions are reduced, and channel lengths of MOS transistors formed in the active regions are reduced. As the...

Claims

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