32results about How to "Reduce processing failure" patented technology

In a vertical-type semiconductor device, a method of manufacturing the same and a method of operating the same, the vertical-type semiconductor device includes a single-crystalline semiconductor pattern having a pillar shape provided on a substrate, a gate surrounding sidewalls of the single-crystalline semiconductor pattern and having an upper surface lower than an upper surface of the single-crystalline semiconductor pattern, a mask pattern formed on the upper surface of the gate, the mask pattern having an upper surface coplanar with the upper surface of the single-crystalline semiconductor pattern, a first impurity region in the substrate under the single-crystalline semiconductor pattern, and a second impurity region under the upper surface of the single-crystalline semiconductor pattern. The vertical-type pillar transistor formed in the single-crystalline semiconductor pattern may provide excellent electrical properties. The mask pattern is not provided on the upper surface of the single-crystalline semiconductor pattern in the second impurity region, to thereby reduce failures of processes.

An emergency trunk release handle for an automobile displays the graphics explaining the use and function of the handle by cutting out the material from the handle. Forming the emergency release handle from a phosphorescent plastic material that can be formed by a molding process, such as injection molding, the cut-out graphics show as darkened areas, when viewed in the dark confines of an automobile trunk, to provide a high degree of visibility for the graphics. The graphics are also visible when seen against the dark carpet in the interior of an opened trunk cavity. The formation of the graphics is accomplished by coring the mold in the configuration of the desired graphics and by forming the plastic material in the mold around the cores. The resultant handle structure is thus formed in a cost effective manner that reduces the process failure potential during the manufacturing of the handle.

In a semiconductor device and a method of manufacturing the same, a first insulation layer is removed from a cell area of a substrate and a first active pattern is formed on the first area by a laser-induced epitaxial growth (LEG) process. Residuals of the first insulation layer are passively formed into a first device isolation pattern on the first area. The first insulation layer is removed from the second area of the substrate and a semiconductor layer is formed on the second area of the substrate by a SEG process. The semiconductor layer on the second area is patterned into a second active pattern including a recessed portion and a second insulation pattern in the recessed portion is formed into a second device isolation pattern on the second area. Accordingly, grain defects in the LEG process and lattice defects in the SEG process are mitigated or eliminated.

The invention discloses a method for machining spatial holes by using a large ellipsoid on a numerical control boring-milling machine. The method comprises the following steps of: determining the range and the clamping datum of a machined hole by applying a software analysis workpiece; compiling a numerical control machining program of the spatial hole; checking the numerical control machining program by applying simulation software; clamping and correcting according to a numerical control requirement and machining the spatial hole with an allowance; detecting the spatial position precision of the machined hole, adjusting the numerical control machining program according to a detection result and then machining the spatial hole to a required precision; and repeatedly clamping and machining a spatial hole in another range until holes on the workpiece are all machined. The invention has the advantages that multiple groups of spatial holes on the large ellipsoid can be machined by using a numerical control boring-milling machine, thereby meeting the requirement on the position precision; the maximum utilization ratio of a process is realized without being limited by the system of the numerical control boring-milling machine, and the compiling of the machining program can be finished only by updating part models and mathematical parameters; and the process is safe and reliable and has high efficiency.

In a vertical-type semiconductor device, a method of manufacturing the same and a method of operating the same, the vertical-type semiconductor device includes a single-crystalline semiconductor pattern having a pillar shape provided on a substrate, a gate surrounding sidewalls of the single-crystalline semiconductor pattern and having an upper surface lower than an upper surface of the single-crystalline semiconductor pattern, a mask pattern formed on the upper surface of the gate, the mask pattern having an upper surface coplanar with the upper surface of the single-crystalline semiconductor pattern, a first impurity region in the substrate under the single-crystalline semiconductor pattern, and a second impurity region under the upper surface of the single-crystalline semiconductor pattern. The vertical-type pillar transistor formed in the single-crystalline semiconductor pattern may provide excellent electrical properties. The mask pattern is not provided on the upper surface of the single-crystalline semiconductor pattern in the second impurity region, to thereby reduce failures of processes.

In a method of filling a liquid crystal display panel with liquid crystal and a liquid crystal filling system using the method, a seal line and spacers are formed on a color filter substrate. A first volume defined by the seal line and a second volumes defined by the spacers are obtained. An amount of liquid crystal to be supplied into a region enclosed by the seal line is precisely calculated based on the first and second volumes. Shortage of the liquid crystal supplied into the LCD panel and overflow of the liquid crystal can be avoided. Accordingly, the steps for supplying the liquid crystal into the LCD panel may be reduced, and simultaneously peripheral regions of the LCD panel be prevented from being contaminated by the liquid crystal while the liquid crystal is filled into the LCD panel.

An emergency trunk release handle for an automobile displays the graphics explaining the use and function of the handle by cutting out the material from the handle. Forming the emergency release handle from a phosphorescent plastic material that can be formed by a molding process, such as injection molding, the cut-out graphics show as darkened areas, when viewed in the dark confines of an automobile trunk, to provide a high degree of visibility for the graphics. The graphics are also visible when seen against the dark carpet in the interior of an opened trunk cavity. The formation of the graphics is accomplished by coring the mold in the configuration of the desired graphics and by forming the plastic material in the mold around the cores. The resultant handle structure is thus formed in a cost effective manner that reduces the process failure potential during the manufacturing of the handle.

In a method of manufacturing a semiconductor device, a substrate is loaded to a process chamber having, unit process sections in which unit processes are performed, respectively. The unit processes are performed on the substrate independently from one another at the unit process sections under a respective process pressure. The substrate sequentially undergoes the unit processes at the respective unit process section of the process chamber. Cleaning processes are individually performed to the unit process sections, respectively, when the substrate is transferred from each of the unit process sections and no substrate is positioned at the unit process sections. Accordingly, the process defects of the process units may be sufficiently prevented and the operation period of the manufacturing apparatus is sufficiently elongated.

In a method of filling a liquid crystal display panel with liquid crystal and a liquid crystal filling system using the method, a seal line and spacers are formed on a color filter substrate. A first volume defined by the seal line and a second volumes defined by the spacers are obtained. An amount of liquid crystal to be supplied into a region enclosed by the seal line is precisely calculated based on the first and second volumes. Shortage of the liquid crystal supplied into the LCD panel and overflow of the liquid crystal can be avoided. Accordingly, the steps for supplying the liquid crystal into the LCD panel may be reduced, and simultaneously peripheral regions of the LCD panel be prevented from being contaminated by the liquid crystal while the liquid crystal is filled into the LCD panel.

In a method and apparatus for polishing a Cu metal layer and a method for forming Cu metal wiring, Cu oxide created by a surface oxidation of a Cu metal layer is removed from the wafer. The Cu metal layer, in which Cu oxide is removed, is polished. By polishing the Cu metal layer using the above method, process failures, such as scratches, caused by the presence of remnants of Cu oxide during subsequent polishing can be prevented.

In a vertical-type semiconductor device, a method of manufacturing the same and a method of operating the same, the vertical-type semiconductor device includes a single-crystalline semiconductor pattern having a pillar shape provided on a substrate, a gate surrounding sidewalls of the single-crystalline semiconductor pattern and having an upper surface lower than an upper surface of the single-crystalline semiconductor pattern, a mask pattern formed on the upper surface of the gate, the mask pattern having an upper surface coplanar with the upper surface of the single-crystalline semiconductor pattern, a first impurity region in the substrate under the single-crystalline semiconductor pattern, and a second impurity region under the upper surface of the single-crystalline semiconductor pattern. The vertical-type pillar transistor formed in the single-crystalline semiconductor pattern may provide excellent electrical properties. The mask pattern is not provided on the upper surface of the single-crystalline semiconductor pattern in the second impurity region, to thereby reduce failures of processes.

A semiconductor memory device includes horizontal patterns disposed on a peripheral circuit structure and spaced apart from each other in a first direction. Memory structures are disposed on the horizontal patterns. The memory structures include source structures and electrode structures. A division structure is disposed between adjacent horizontal patterns in the first direction and is configured to separate the source structures of adjacent memory structures from each other. An etch stop pattern is disposed between the horizontal patterns at a level lower than a level of the source structures. The etch stop pattern is connected to a lower portion of the division structure.

A closed chemical introduction system used to deliver active ingredients in liquid chemical to a chemical vapor deposition system includes a robust, moisture-free cartridge containing a defined dose of liquid chemical. The cartridge is placed on a mounting slot specially configured to receive the cartridge. Upon initiating the system, a first linear mechanical actuator securely holds the cartridge in the slot, while an extraction lance attached to a second linear mechanical actuator punctures the cartridge from the bottom, extracts the liquid chemical and delivers it to a vaporization chamber. The vaporization chamber evaporates the liquid chemical and delivers the vapors containing the active ingredients to the chemical vapor deposition system. The chemical vapor deposition system may include a treatment chamber, a conveyor, a compressed clean air system to provide separate treatment compartments within the chamber, a moisture system, a chemical vapor system, and a neutralization system to neutralize harmful byproducts.

A method of manufacturing a semiconductor device, the method including providing a substrate, the substrate including single crystalline silicon and having the first region and a second region; growing a pillar from a top surface of the substrate in the first region; forming a vertical channel transistor including a first gate structure such that first gate structure surrounds a central portion of the pillar; and forming a second transistor on the second region of the substrate such that the second transistor includes a second gate structure.

A thin film transistor array panel is provided according to one or more embodiments. In an embodiment, the thin film transistor array panel includes: a base substrate that has a display area and a peripheral area; a plurality of thin film transistors that are formed in the display area; a plurality of signal input pads that are formed in the peripheral area and that are formed long in a first direction; and a plurality of signal lines that are connected to the thin film transistors and the signal input pads, wherein at least a part of each of the plurality of signal input pads is arranged in a line along the first direction.

In a method and apparatus for polishing a Cu metal layer and a method for forming Cu metal wiring, Cu oxide created by a surface oxidation of a Cu metal layer is removed from the wafer. The Cu metal layer, in which Cu oxide is removed, is polished. By polishing the Cu metal layer using the above method, process failures, such as scratches, caused by the presence of remnants of Cu oxide during subsequent polishing can be prevented.

A closed chemical introduction system used to deliver active ingredients in liquid chemical to a chemical vapor deposition system includes a robust, moisture-free cartridge containing a defined dose of liquid chemical. The cartridge is placed on a mounting slot specially configured to receive the cartridge. Upon initiating the system, a first linear mechanical actuator securely holds the cartridge in the slot, while an extraction lance attached to a second linear mechanical actuator punctures the cartridge from the bottom, extracts the liquid chemical and delivers it to a vaporization chamber. The vaporization chamber evaporates the liquid chemical and delivers the vapors containing the active ingredients to the chemical vapor deposition system. The chemical vapor deposition system may include a treatment chamber, a conveyor, a compressed clean air system to provide separate treatment compartments within the chamber, a moisture system, a chemical vapor system, and a neutralization system to neutralize harmful byproducts.

The invention relates to the technical field of friction welding, in particular to a friction welding machine capable of rolling and leveling a workpiece. The friction welding machine comprises a mounting frame mechanism, wherein the mounting frame mechanism comprises a base, a first mounting frame is fixed to the top end of the base, a second mounting frame is fixed to the position, located at one side of the first mounting frame, of the top end of the base, and a third mounting frame is fixed to the position, located at one side of the second mounting frame, of the top end of the base; and adriving motor is installed at the top end of the third mounting frame, the output end of the driving motor is connected with a second clamping mechanism, and an eccentric mechanism is connected to the position, located on the outer wall of the second clamping mechanism, of the top end of the second mounting frame. According to the friction welding machine, through the arrangement of a connectingmechanism and a grinding mechanism, a grinding head can be rapidly mounted or dismounted through the connecting mechanism, the process is convenient, and after welding is completed through the grinding mechanism, a weld joint can be rapidly ground, the purpose of rolling leveling after welding is completed is achieved, the machining difficulty needed by the workpiece is reduced, and therefore theproduction cost is reduced.

The present disclosure relates to manufacturing techniques and respective semiconductor devices in which the capping material of gate electrode structures may be removed together with portions of the capping material of resistors on the basis of a highly controllable directional etch process, wherein raised drain and source regions may be protected on the basis of a fill material.

A method for improving a misalignment of a printed circuit board and a liquid crystal display device with the printed circuit board are disclosed. A printed circuit board having a substrate and PCB lands formed at a portion of the substrate in the horizontal direction is provided and a tape carrier package having TCP leads corresponding to the PCB lands is also provided. The intervals among the PCB lands are amended by the thermal expansion amount of the substrate. After the printed circuit board and the tape carrier package are aligned, the printed circuit board and the tape carrier package are connected to each other by the thermo-compression bonding process. The misalignment due to the thermo-compression bonding process can be improved, decreasing the processing failures and increasing the productivity.

The present invention discloses a piping design for a high density plasma process chamber, wherein an extra pipe is added to between a process chamber and a mass flow controller, and the extra pipe together with a pump is used to drain out the gas, which cannot be monitored by the mass flow controller and survives in a gas injection pipe, lest the remaining gas pollute the deposited film or react with the process gas to induce an explosion in the succeeding deposition process.

The invention is suitable for the technical field of invisible tooth appliance processing, and provides an invisible tooth appliance solid model recognition processing technology. The technology comprises the following steps: sequentially scanning model contours to generate three-dimensional images, and carrying out identifiable positioning on positioning reference points marked on a model; matching the three-dimensional images generated by scanning with a preset model database, determining a database model to perform datum point matching positioning, and obtaining a paired database model; carrying out cutting contour line setting through the paired database models, and transmitting set contour line data to an automatic mechanical arm; and carrying out trajectory cutting of the mechanicalarm according to set contour line data and coordinate datum points. According to the method, the production efficiency of a traditional production process is improved, and machining failures caused bythree-dimensional coordinate errors or identification recognition errors in identification type information scanning and positioning are reduced.

An operational control method is provided for a machine tool that includes a plurality of tool holders with a cutting-tool. The machine tool relatively moves the tool holders with respect to a workpiece to process the workpiece. The operational control method includes determining whether an abnormality has occurred in the cutting-tool during a processing or not, determining whether a simultaneous processing in which at least two or more of the tool holders perform the processings to an identical workpiece is being performed or not and whether the cutting-tool having the detected abnormality is the cutting-tool that is performing the simultaneous processing or not when the abnormality is detected, and causing the tool holder with the cutting-tool having the detected abnormality to take an abnormality avoidance operation and another of the tool holders to take a response operation based on a determination result at the determining of the simultaneous processing.

The utility model relates to the technical field of wood processing, in particular to a simple shaping device for an arc-shaped component, which comprises a lower die, a support, an assembly plate and a pressurizing component, the support is fixedly connected with the side surface of the lower die, a feed opening is arranged on the side surface of the support, the assembly plate is fixedly connected with the upper surface of the support, and an upper die is arranged on the side surface of the support. The upper mold is matched with the lower mold, the pressurizing assembly is arranged on the upper surface of the assembling plate and comprises a first threaded column, a threaded hole is formed in the upper surface of the assembling plate, the first threaded column is in threaded connection with the interior of the threaded hole, and the inner wall, located in the threaded hole, of the assembling plate is in threaded connection with a second threaded column. According to the shaping device, the pressurizing assembly is arranged, so that the pressure borne by the upper mold is located on the two sides of the upper mold, the problems that the pressure borne by the upper mold is located in the center, the pressure on the two sides is low, and unqualified plate machining is likely to be caused are solved, and the shaping effect of the shaping device is further improved.

The invention discloses a method for machining spatial holes by using a large ellipsoid on a numerical control boring-milling machine. The method comprises the following steps of: determining the range and the clamping datum of a machined hole by applying a software analysis workpiece; compiling a numerical control machining program of the spatial hole; checking the numerical control machining program by applying simulation software; clamping and correcting according to a numerical control requirement and machining the spatial hole with an allowance; detecting the spatial position precision of the machined hole, adjusting the numerical control machining program according to a detection result and then machining the spatial hole to a required precision; and repeatedly clamping and machining a spatial hole in another range until holes on the workpiece are all machined. The invention has the advantages that multiple groups of spatial holes on the large ellipsoid can be machined by using a numerical control boring-milling machine, thereby meeting the requirement on the position precision; the maximum utilization ratio of a process is realized without being limited by the system of thenumerical control boring-milling machine, and the compiling of the machining program can be finished only by updating part models and mathematical parameters; and the process is safe and reliable andhas high efficiency.

The present disclosure relates to manufacturing techniques and respective semiconductor devices in which the capping material of gate electrode structures may be removed together with portions of the capping material of resistors on the basis of a highly controllable directional etch process, wherein raised drain and source regions may be protected on the basis of a fill material.

The utility model provides a fixing tool convenient for an electric hand drill to punch a hole in a cover plate, a workbench is fixed on a tool base, and a workpiece cover plate is placed on the workbench; the stand column is fixed to the tool base, the stand column is sleeved with the spring, the stand column is sleeved with the sleeve in a sliding and rotatable mode, and the sleeve is erected on the spring. The sleeve is fixedly sleeved with the first clamp, the electric hand drill with a downward drill bit is fixedly sleeved with the second clamp, and the first clamp and the second clamp are fixedly connected. And the electric hand drill is positioned above the workpiece cover plate. According to the utility model, the drill bit of the electric hand drill does not deviate in the processing process, and the processing cost is saved.