FIB Process for Selective and Clean Etching of Copper
Patent Information
- Authority / Receiving Office
- US · United States
- Current Assignee / Owner
- TIZA LAB
- Publication Date
- 2011-03-03
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation-in-part (CIP) of U.S. application Ser. No. 12 / 547,368, filed Aug. 25, 2009.BACKGROUND OF THE INVENTION
[0002] This invention relates generally to focused ion beam etching of copper and copper materials, and more particularly to the chemically-assisted etching of copper over dielectric materials.
[0003] Copper (Cu) is the primary material used in integrated circuits (ICs) to create electrically conductive interconnects, and the etching of copper in ICs using focused ion beam (FIB) techniques is important in the field of circuit editing (CE) for failure verification and debugging of the ICs. Circuit editing of ICs with a focused-ion-beam (FIB) system requires that copper planes and traces be milled (cut) uniformly and cleanly so as to electrically isolate circuit elements across the separation created.
[0004] Achieving clean uniform FIB etching of copper for CE is difficult. In spite of significant past efforts ...