Copper alloy wire and manufacturing method thereof

Abstract

A copper alloy wire and a manufacturing method thereof are provided. The copper alloy wire includes: by weight percentage of components, 0.3 to 0.45 of argent, 0.01 to 0.02 of titanium, and a remaining part that is formed by copper and unavoidable impurities. The method for manufacturing the copper alloy wire is performing two-phase vacuum melting: first performing vacuum electric arc melting into a copper-titanium mother alloy, and then performing vacuum induction melting with remaining components into a copper alloy wire material by means of continuous casting; then drawing the copper alloy wire material into a copper alloy fine wire by a non-slip wire drawing device in a material even-flow wire drawing manner, and finally performing thermal treatment on the copper alloy fine wire by using argon as a protection gas, so as to complete a process of the copper alloy wire.

Description

BACKGROUNDTechnical Field[0001]The present disclosure relates to a copper wire and a manufacturing method thereof, and in particular, to a copper alloy wire and a manufacturing method thereof.Related Art[0002]In recent years, because the price of gold rises, gold wires that are conventionally used as semiconductor encapsulation wires have begun to be replaced with other metal wires, and developing wires for semiconductor encapsulation wires by means of material components or innovative structures has become a main development direction of the field.[0003]Therefore, copper metal, which has advantages in both conductivity and costs, is also used as a main alternative material to develop wires. However, although the copper metal has good conductivity and ductility as well as low price, in actual application, the attribute that the copper metal is easily oxidized affects the conduction function and greatly shortens life of copper wires. Therefore, improving the problem of copper wire ox...

AI Technical Summary

Benefits of technology

The present disclosure addresses the problem of copper alloy wires easily oxidizing when used in semiconductor encapsulation. By adding argent and titanium and improving the manufacturing method, the copper alloy wires have better resistance to oxidation and improved weldability. The copper alloy wire is fully annealed using argon as a protection gas at a high temperature, resulting in improved mechanical properties and better function optimization overall.

Problems solved by technology

However, although the copper metal has good conductivity and ductility as well as low price, in actual application, the attribute that the copper metal is easily oxidized affects the conduction function and greatly shortens life of copper wires.

Next, in a period in which most copper oxides on the surface oxide layer are nonsaturated copper oxides, an organic layer that does not make the oxide layer reduced is formed on the surface of the wire by means of a diamond drawing die, so as to obtain redox equilibrium of the copper oxide layer, thereby preventing generation of spot-shaped copper oxides on the surface; however, when the copper wire of the patent document is actually welded with an aluminum pad, weldability may be poor owing to ratios of components.

However, in actual application, because a surface coating of the bonding wire of the foregoing patent document (TW 1512121) includes at least one of Pd, Au, Pt, or Ag as a main component, the bonding wire of the foregoing patent document (TW 1512121) has high manufacturing costs and a ballability that is poorer than that of a bonding wire without a surface coating.

The main problem to be resolved by the present disclosure lies in limitation of the attribute that copper alloy wires are easily oxidized in application of semiconductor encapsulation.

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