Unlock instant, AI-driven research and patent intelligence for your innovation.

Low Halide Lanthanum Precursors For Vapor Deposition

a technology of lanthanum precursors and lanthanum vapor, which is applied in the direction of sublimation, group 3/13 element organic compounds, separation processes, etc., can solve the problems of reducing the yield and reliability of cmos based integrated circuits, limiting the performance of ultrathin sio2 gate dielectrics, and putting extreme constraints on the level of contamination allowed on the surface of silicon wafers

Inactive Publication Date: 2020-05-28
VERSUM MATERIALS US LLC
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a low halide composition of lanthanide amidinate compounds with high purity. The invention also provides a method for purifying crude lanthanide amidinate materials to obtain the high purity composition. The purified material has low halide impurities, resulting in a negative effect on the dielectric constant. The invention also provides a delivery system for the high purity composition. The invention addresses the problem of halide impurities in lanthanide amidinate compounds and provides a solution to remove them.

Problems solved by technology

This is because increasing the speed and complexity of semiconductor integrated circuits requires advanced processes that put extreme constraints on the level of contamination allowed on the surfaces of silicon wafers.
Metallic and halide contaminations on wafer surface are known to be a serious limiting factor to yield and reliability of CMOS based integrated circuits.
Such contamination degrades the performance of the ultrathin SiO2 gate dielectrics that form the heart of the individual transistors.
Halides impurities may migrate in the device and cause corrosion.
Halide impurities present in lanthanum precursors may also cause corrosion of stainless steel containers used for delivery of lanthanum containing precursors to the deposition tool and transfer of iron and other stainless steel metal impurities to the lanthanum-containing film causing device failure.
Most common preparation of such lanthanum includes lanthanum halides as starting materials resulting in halide contamination.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low Halide Lanthanum Precursors For Vapor Deposition
  • Low Halide Lanthanum Precursors For Vapor Deposition
  • Low Halide Lanthanum Precursors For Vapor Deposition

Examples

Experimental program
Comparison scheme
Effect test

example 1

Vacuum Sublimation with Raw Lanthanum Formamidinate La(FAMD)3 Having R1 Hydrogen, R2=R3=Iso-Propyl Using Purification System 100

[0077]The purification system 100 shown in FIG. 1 was used.

[0078]600 gram of raw lanthanum formamidinate La(FAMD)3 material was purchased from Strem Chemicals Inc., 7 Muliken Way, Newburyport, Mass. and placed into the sublimer 101. The halides and trace metals in the raw material were measured by Ion chromatography (IC) and were listed in Table I.

[0079]The system was evacuated to <0.5 torr abs pressure.

[0080]The sublimer was heated to 70° C. The condenser was heated to 70° C. for the first 5 hours. After 5 hours the sublime was heated to 160° C. and the condenser was run at room temperature (RT 20 to 25° C.) where the amidinate compound was condensed. The cooler was maintained at room temperature all the time

TABLE IRawPurifiedLa(FAMD)3 Assay99.7 wt. %99.9 wt. %Chloride 5.7 ppm 1.8 ppmBromide 583 ppm19.8 ppmLi [ No Gas ]0.010.01Na [ No Gas ]0.050.04Mg [ No ...

example 2

Vacuum Sublimation of Raw Lanthanum Formamidinate La(FAMD)3 Having R1=Hydrogen, R2=R3=Iso-Propyl Using Purification System 100A

[0086]The purification system 100A shown in FIG. 2 was used.

[0087]193 grams of raw La(FAMD)3 material was purchased from Strem Chemicals Inc., 7 Muliken Way, Newburyport, Mass. and placed into sublimer. The halides and trace metals in the raw material were measured by Ion chromatography (IC) and were listed in Table 2.

TABLE IIRawProductLa(FAMD)3 Assay99.72%99.8%Chloride 5.7 ppm0.9 ppmBromide563.8 ppm1.0 ppmLi [ No Gas]0.010.01Na [ No Gas]2.190.04Mg [ No Gas]0.05Al [ No Gas]0.090.03K [ H2 ]0.080.04Ca [ H2 ]0.14Ti [ No Gas]Cr [ H2 ]0.090.02Mn [ No Gas]0.010.01Fe [ H2]0.40.07Co [ No Gas]Ni [ No Gas]Cu [ No Gas]0.050.02Zn [ No Gas]0.06

[0088]A glass coarse fritted disc with porosity 40-60 micron was purchased from Chemglass Life Science LLC, 3800 N Mill Rd, Vineland, N.J. 08360 and used as the mediated filter 103.

[0089]The system was evacuated to <0.5 torr abs pr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Temperatureaaaaaaaaaa
Temperatureaaaaaaaaaa
Temperatureaaaaaaaaaa
Login to View More

Abstract

Lanthanide compounds for vapor deposition having ≤50.0 ppm, ≤30.0 ppm, or ≤10.0 ppm of all halide impurity combined is provided. The purification systems and methods are also provided.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This patent application is a non-provisional of U.S. provisional patent application Ser. No. 62 / 772,450, filed on Nov. 28, 2018, which is incorporated herein by reference in its entirety.BACKGROUND OF THE INVENTION[0002]The invention relates generally to a composition comprising lanthanide such as lanthanum precursors containing 10.0 ppm or less and preferably <5.0 ppm of halide impurities such as fluorine, chlorine, bromine or iodine. The invention also relates to the method for deposition of lanthanum-containing films, such as lanthanum oxide, metal oxide doped with lanthanum oxide, lanthanum nitride and metal nitride doped with lanthanum nitride. Lanthanum-containing films are used in electronic industrial applications.[0003]Thin films of rare earth oxides are of interest because of their potential use as dielectrics in microelectronics applications. In particular, lanthanum oxide (La2O3) is attractive for a number of reasons includ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C07F5/00
CPCB01D7/00C07F5/00C07C257/12C23C14/12C23C14/24C23C16/45553H01L21/02192C07B63/00C23C16/40C23C16/18C07F5/003C23C16/34
Inventor OSTERWALDER, NEILIVANOV, SERGEI V.
Owner VERSUM MATERIALS US LLC