Cu-W thin film coating integrated composite heat sink

Abstract

The Cu-W film coating integrated composite heat sink comprises an oxygen-free copper matrix 1 with deposed 8 mum-15 mum Cu-W film 2 that composes by 8.1-17.5wt% Cu and W. This invention matches semiconductor chip on thermal expansion, can avoid damage to the chip, and satisfies the request of high-power semiconductor laser to improve the laser lifetime greatly.

Description

technical field [0001] The present invention relates to heat sink materials for semiconductor device packaging. Background technique [0002] At present, semiconductor lasers are more and more widely used in the military field, among which airborne and missile-borne semiconductor lasers are mainly used for radar, ranging, fuze, guidance and tracking, aiming and warning, interception, etc. The increase in the power of high-power semiconductor lasers and the ultra-miniaturization of semiconductor devices have made their power consumption density higher and higher, and the problem of heat dissipation has become more and more prominent. This puts forward higher requirements on the performance and reliability of the heat sink material used for packaging. In high-power semiconductor lasers, the heat sink used to carry the semiconductor GaAs die and take charge of heat dissipation is a key component. Each heat sink must carry a power of more than 60W, the pulse width is 100-400μs,...

AI Technical Summary

Problems solved by technology

Traditional Cu and Al materials have good thermal conductivity, but their high thermal expansion coefficient will generate excessive thermal stress, which reduces the reliability and life of high-power semiconductor lasers. Pure W and Mo materials have small thermal expansion coefficients, but thermal conductivity The performance is poor and cannot meet the heat dissipation requirements; the tungsten (molybdenum) copper composite material developed and used in recent years has both the high thermal conductivity of copper and the low expansion coefficient of tungsten (molybdenum), and has realized the compatibility with semiconductor silicon, gallium arsenide and ceramic alumina , good matching sealing of beryllium oxide, is currently one of the most widely used heat sink materials in large-scale integrated circuits and power devices, but its thermal conductivity is only about half of that of oxygen-free copper, such as the thermal conductivity of W85Cu15 alloy It is 160~190W / m·K (398W / m·K for oxygen-free copper). It is completely possible for them to be used in general power devices, but it is difficult to solve the higher integration and faster operating speed of military high-power devices. more serious thermal problems caused by

Images