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Domaines in a metal oxide matrix

A technology of regional structure and oxide, applied in the preparation of titanium oxide/hydroxide, aluminum oxide/hydroxide, silicon oxide, etc., can solve problems such as roughness of the substrate

Inactive Publication Date: 2008-02-13
EVONIK DEGUSSA GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this respect, although the domain structures have nanoscale dimensions, the matrix on the other hand is often rather rough, with the result that composite particles with nanoscale dimensions can only be obtained by further grinding.

Method used

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  • Domaines in a metal oxide matrix
  • Domaines in a metal oxide matrix
  • Domaines in a metal oxide matrix

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0077] Example 1: Indium-tin oxide in a silica matrix

[0078] SiCl 4 Vaporize at about 200°C at a rate of 0.51 kg / h, and then combine with 3.8Nm 3 / hour of hydrogen, 16.4Nm 3 / hour of air and 1Nm 3 / hour of nitrogen is fed into the reactor together.

[0079] In addition, an aqueous solution of indium(III) chloride and tin(IV) chloride was passed through a two-component nozzle to obtain an aerosol composed of domain structure precursors, and a carrier gas (3Nm 3 / hour of nitrogen) into the reactor. The aqueous solution contains 10.98wt.% InCl 3 and 0.66wt.% SnCl 4 .

[0080] The homogeneously mixed gas-aerosol mixture flows into the reactor and burns at an adiabatic combustion temperature of about 1200°C with a residence time of about 50msec.

[0081] The residence time is calculated based on the volume factor of the mixture flowing through the equipment and the operating volume flow rate of the process gas at the adiabatic combustion temperature.

[0082] After the f...

Embodiment 2

[0084] Embodiment 2~4 is carried out by the method similar to embodiment 1. In Example 2 the same precursor as in Example 1 was used, but in other proportions. In Example 3 ferric chloride and zinc chloride in solution were used as domain precursors and silicon tetrachloride in vapor form was used as matrix precursor. In Example 4 the three domain precursors, ie the chlorides of iron, zinc and nickel, were used in solution, and titanium tetrachloride as matrix precursor was used in vapor form. In Example 5, zinc nitrate and palladium nitrate were used as the domain structure matrix, while aluminum nitrate was used as the matrix matrix in the form of an aqueous solution, and was changed into an aerosol by ultrasonic atomization, and introduced into the reactor through the carrier gas. Example 6 was carried out in a manner similar to that of Example 5. In Example 6, cerium(III) nitrate and palladium nitrate were used as domain precursors, and zirconyl nitrate was used as a mat...

Embodiment 3

[0094] The TEM photograph of the powder of Example 3 shows an amorphous silica matrix embedded with iron-zinc oxide crystals with a crystallite size of 5-30 nm (Fig. 4). Energy Dispersive X-ray Analysis (EDX)

[0095] The EDX spectrum of the powder of Example 1 shows that the black crystals contain only indium and tin atoms.

[0096] FIG. 5A is the EDX spectrum of the domain structure in Example 1. FIG. The atomic mass ratio of indium / tin varies from 94.6:5.4 to the corresponding oxide mass ratio of indium oxide / tin oxide of 94.3:5.7. This is in good agreement with the overall value of 94.0:6.0 obtained by X-ray fluorescence analysis of indium oxide / tin oxide.

[0097] FIG. 5B is the EDX spectrum of another domain structure in Example 1. FIG. The atomic mass ratio of indium / tin is 99.5:0.5, indicating that the structural composition of this region is almost entirely indium oxide.

[0098] Figure 6 is the EDX spectrum of the powder in Example 3.

[0099] X-ray diffraction ...

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Abstract

Composite powder with a matrix domain structure, in which the matrix is a metal oxide and is present in the form of three-dimensional aggregates that have at least in one dimension a diameter of not more than 250 nm, the domains consist of metal oxides and / or noble metals in the matrix of an individual metal oxide, wherein the domains consist of at least two metal oxides or at least two noble metals or a mixture of at least one metal oxide and at least one noble metal, and are nanoscale, and in which the composite powder has a volume-specific surface of 60 to 1200 m<2> / cm<3>. The composite powder is produced by mixing the precursors of the oxides of the matrix and of the domains, corresponding to the subsequently desired ratio, with a gas mixture containing a combustible gas and oxygen and are reacted in a reactor consisting of a combustion zone and a reaction zone, and the hot gases and the solid products are cooled and then separated from the gases. It may be used as material for magnetic, electronic or optical applications.

Description

technical field [0001] The invention relates to a composite powder with a matrix-domain structure and its preparation method and application. Background technique [0002] The problem in the preparation of nanoscale materials is that the very small clusters of atoms that are initially formed in the reaction, on the order of 1 to 100 nanometers, have a tendency to aggregate to form larger units. The energy derived from the high surface / volume ratio is thus reduced. Those special, size-dependent electronic, optical, magnetic and chemical properties possessed by these atomic clusters are thus reduced or completely eliminated. [0003] These atomic clusters can be stabilized by a polymeric organic matrix. In it, clusters of atoms are surrounded by a matrix which prevents them from aggregating. Clusters of atoms surrounded in this way are also known as domain structures. [0004] Such a method is disclosed, for example, in US Pat. No. 4,474,866. Polymeric matrices such as sy...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J32/00C01B33/113C01G1/02C01B13/24C01B13/34C01B33/18C01F7/30C01G19/00C01G23/07C01G25/02
CPCC01P2006/12C01P2002/72C01G19/00C01G1/02C01P2004/64B82Y30/00C01P2002/85Y10T428/2982Y10T428/12146Y10T428/298
Inventor 海科·格特弗里德斯蒂潘·卡图希奇米夏埃多·克雷默马库斯·普里多厄尔维利巴尔德·沃姆巴赫尔吉多·齐默尔曼
Owner EVONIK DEGUSSA GMBH