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Asymmetric ridge gallium nitride base semiconductor laser and manufacturing method thereof

A ridge waveguide, GaN-based technology, applied in semiconductor lasers, optical waveguide semiconductor structures, lasers, etc., can solve problems such as hindering the application of GaN-based lasers and low laser output power

Inactive Publication Date: 2009-02-04
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the limitation of injection current density, this structure will cause the output power of the laser to be significantly low, which hinders the application of GaN-based lasers in many fields that require high-power laser output.

Method used

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  • Asymmetric ridge gallium nitride base semiconductor laser and manufacturing method thereof
  • Asymmetric ridge gallium nitride base semiconductor laser and manufacturing method thereof
  • Asymmetric ridge gallium nitride base semiconductor laser and manufacturing method thereof

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Embodiment

[0058] Please refer to Figure 1 to Figure 4 As shown, the device fabrication process of the novel ridge-shaped GaN-based laser proposed by the present invention is as follows: the sapphire material is used as the substrate 10, and the device structure is grown by MOCVD, MBE or other equipment for growing GaN materials. The structure includes an N-type GaN ohmic contact layer 11, an N-type AlGaN lower confinement layer 12, an N-type GaN lower waveguide layer 13, an InGaN / GaN active layer 14, an AlGaN electron blocking layer 15, a P-type GaN upper waveguide layer 16, and a P-type GaN upper waveguide layer 16. Type AlGaN upper confinement layer 17 and P-type GaN cladding layer 18. The asymmetric ridge-shaped step structure is carved in two steps by dry etching. The length direction of the ridge is along the [11-20] direction of GaN. The first step is to carve a wide and small ridge. In the second step, the laser ridge mask is aligned with one side of the ridge formed by etching...

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Abstract

A method for preparing asymmetric semiconductor laser with ridge GaN base includes growing ohm contact layer, bottom limit layer, bottom waveguide layer, active layer, electronic blocking layer, top waveguide layer, top limit layer, covering layer in sequence on substrate; forming said top limit layer to be step form by etching and then preparing insulation layer and ohm electrode.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, in particular to an asymmetric ridge waveguide GaN-based semiconductor laser and a manufacturing method thereof. Background technique [0002] As a third-generation semiconductor, gallium nitride (GaN) and its series of materials (including aluminum nitride, aluminum gallium nitride, indium gallium nitride, and indium nitride) are characterized by their large band gap and wide spectral range (covering from ultraviolet to Infrared full band), high temperature resistance and corrosion resistance, it has great application value in the field of optoelectronics and microelectronics. GaN-based lasers are very important GaN-based optoelectronic devices. Because the light waves emitted by them are in the blue-violet light band, GaN-based lasers are used in high-density optical information storage, projection display, laser printing, underwater communication, sensing of biochemical reagents and It ha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/22H01S5/343H01S5/323H01S5/00
Inventor 李德尧张书明杨辉梁俊吾
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI