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Nitride semiconductor device

A technology of nitride semiconductors and components, which is applied in the manufacture of semiconductor devices, semiconductor lasers, semiconductor/solid-state devices, etc., and can solve problems such as the reduction of Vf of LED components

Inactive Publication Date: 2009-08-19
NICHIA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] If the threshold voltage of laser components can be lowered, once this technology is applied to LED components, the Vf of LED components can be expected to decrease

Method used

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Embodiment 1

[0267] Embodiment 1 of the present invention is such as figure 2 A finished example of the nitride semiconductor device (LD device) shown was fabricated by the following steps.

[0268] First, a substrate 10 composed of sapphire (C surface) was placed in a reaction container, and after the container was sufficiently replaced with hydrogen, the substrate temperature was raised to 1050° C. while flowing hydrogen to clean the substrate.

[0269] Next, the temperature is lowered to 510°C, using hydrogen for the transport gas and ammonia (NH 3 ) and TMG (trimethylgallium), grown on the substrate 10 for about The first buffer layer 11 is composed of thick GaN.

[0270] After the growth of the buffer layer 11, only TMG was stopped, and the temperature was raised to 1050°C. When it reaches 1050°C, TMG and ammonia are also used for the source gas to generate a film thickness of 5 μm with a carrier concentration of 1×10 18 / cm 3 The second buffer layer 112 is composed of undoped ...

Embodiment 2

[0294] In Example 1, for the n-side contact layer 12, the growth Film thickness of doping 2×10 19 / cm 3 Si n-type Al 0.05 Ga 0.95 N forms the first layer, followed by the growth of The second layer is formed of thick non-doped GaN, and the superlattice structure with a total film thickness of 1.2 μm is formed by repeated operations. Other structures are laser components with the same structure as in Example 1, showing that the threshold current density is 2.7kA / cm 2 , the threshold voltage is 4.2V, and the life span is more than 60 hours.

Embodiment 3

[0296] In the superlattice constituting the n-side contact layer 12 in Example 2, the second layer is doped with 1×10 18 / cm 3 In other respects, a laser device with the same structure as in Example 2 is made, so that a laser device with substantially the same characteristics as in Example 2 is obtained.

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Abstract

A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

Description

[0001] This application is a divisional application of the invention patent application with the application number "98803128.0" (PCT / JP98 / 00025) and the invention title "Nitride Semiconductor Components" submitted by the applicant on January 8, 1998. technical field [0002] The present invention relates to the use of nitride semiconductors (In X al Y Ga 1-X-Y N, 0≤X, 0≤Y, X+Y≤1) components, the nitride semiconductor is used for light-emitting components such as LED (light-emitting diode), LD (laser diode) or super light-emitting diode (SLD), solar energy Light-receiving components such as batteries and photosensors, or electronic components such as transistors and power components. Background technique [0003] Nitride semiconductors, as materials for high-brightness blue LEDs and pure green LEDs, have only recently been put into practical use in full-color LED displays and traffic signals. LEDs used in these various components have a double heterostructure which is a s...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L31/0304H01S5/32H01S5/323H01L21/20H01L33/04H01L33/32
CPCH01L21/02579H01S5/32341H01L21/02502H01L21/0262H01L21/02458H01L21/0254H01L21/0237H01L33/04H01S2301/173H01L33/32H01L21/0242H01L21/02636H01S5/3216B82Y20/00
Inventor 长滨慎一妹尾雅之中村修二
Owner NICHIA CORP