Method for preparing stephanoporate silicon/DPP photoelectricity composite material
A composite material and porous silicon technology, applied in photovoltaic power generation, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of low photovoltaic performance, achieve the effect of improving charge separation efficiency, simple process, and low equipment requirements
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[0026] Preparation of DPP Saturated Solution Containing Trifluoroacetic Acid
[0027] (1) Add 0.98g (2.5mmol) PTDA, 1.37ml (10mmol) aniline, 0.5g anhydrous zinc acetate to 10ml quinoline, mix well and place in N 2 Under protection, react at 185°C for 8 hours, cool and filter to obtain the initial product;
[0028] (2) The initial product is first boiled and washed with 5% NaOH solution until the washing liquid has no obvious green color, then washed with deionized water until neutral, finally washed three times with absolute ethanol, and dried to obtain a reddish-brown solid;
[0029] (3) The reddish-brown solid was sublimated in vacuum and solidified to obtain a dark red needle-like crystal product, which was pure DPP, and the yield was 78.2%.
[0030] (4) Dissolve excess DPP in N,N-dimethylformamide (DMF) to form a suspension, and then add 0.5ml of 0.1mol / L trifluoroacetic acid dropwise to obtain saturated DPP containing trifluoroacetic acid. solution, its solvent is N, N-...
Embodiment 1
[0033] 1. Wash and degrease the boron-doped p-type (111) monocrystalline silicon wafer, and perform ultrasonic treatment in acetone, ethanol and deionized water for 10 minutes, and dry;
[0034] 2. Treat the dried single crystal silicon wafer with 10% hydrofluoric acid to remove SiO on the surface 2 , sputtering a layer of gold film with a thickness of 50nm on the back of the processed single crystal silicon wafer;
[0035] 3. Under the condition of energization, the monocrystalline silicon chip covered with gold film is used as the anode, and the platinum sheet is used as the cathode, and placed in a mixed solution of hydrofluoric acid and ethanol (the mass percentage of HF is 20%) for electrochemical Corrosion for 10 minutes, where the current density is 5mA / cm 2 ;
[0036] 4. Under the condition of energization, the corroded single crystal silicon wafer is used as the cathode, and the platinum wafer is used as the anode, placed in a DPP saturated solution containing trifl...
Embodiment 2
[0038] 1. Wash and degrease the boron-doped p-type (111) monocrystalline silicon wafer, and perform ultrasonic treatment in acetone, ethanol and deionized water for 10 minutes, and dry;
[0039] 2. Treat the dried single crystal silicon wafer with 10% hydrofluoric acid to remove SiO on the surface 2 , sputtering a layer of gold film with a thickness of 50nm on the back of the processed single crystal silicon wafer;
[0040] 3. Under the condition of energization, the monocrystalline silicon chip covered with gold film is used as the anode, and the platinum sheet is used as the cathode, and placed in a mixed solution of hydrofluoric acid and ethanol (the mass percentage of HF is 20%) for electrochemical Corrosion for 60 minutes, where the current density is 5mA / cm 2 ;
[0041] 4. Under the condition of energization, the corroded single crystal silicon wafer is used as the cathode, and the platinum wafer is used as the anode, placed in a DPP saturated solution containing trifl...
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