Height tropism zinc oxide nano column array ultrasonic auxiliary water solution preparation method

A nano-pillar array, ultrasonic-assisted technology, applied in nanostructure manufacturing, chemical instruments and methods, zinc oxide/zinc hydroxide, etc., can solve the problems of restricted application, reduced growth rate, large average diameter, etc., to ensure high orientation. performance, simple equipment, and energy saving

Inactive Publication Date: 2007-08-01
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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Problems solved by technology

However, compared with the physical evaporation method and chemical vapor deposition method, the growth orientation of the ZnO nanopillars prepared by the aqueous solution method does not have a high degree of uniformity, the diameter distribution is wider and its average diameter is larger (H.C.Zeng, J.Am.Chem. Soc., 2003, 125(15): 4430)
At the same time, the method of adjusting the average diameter of the ZnO na...

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  • Height tropism zinc oxide nano column array ultrasonic auxiliary water solution preparation method

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Embodiment 1

[0020] The specific steps of the method provided by the present invention are:

[0021] 1) Preparation of ZnO sol precursor: Dissolve 0.36-3.6g of ethanolamine in 50ml of ethylene glycol methyl ether solvent, add 1.09-10.9g of zinc acetate, stir in a water bath at 60°C for 0.5h, and then prepare a 0.1-1M sol precursor body.

[0022] 2) Preparation of ZnO seed layer: after immersing the clean glass substrate in the ZnO sol prepared in step (1) for 1 min, deposit a composite gel layer on the surface of the glass substrate at a pulling speed of 2-6 cm / min , and then heat treatment at 300° C. for 10 minutes, then slowly raise the temperature to 550° C. at 2° C. / min, and keep it warm for 0.5-1 hour to form a transparent ZnO seed layer.

[0023] 3) Preparation of ZnO nanocolumn array growth solution: add 0.37-1.48g of zinc nitrate and 0.175-0.7g of hexamethylenetetramine to 50ml of deionized water to prepare a 0.025-0.1M growth solution, stir well and wait for use.

[0024] 4) Ul...

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Abstract

The invention relates to a ultrasound water solution preparation method of high oriented zinc oxide nanometer column array, the concrete steps are following: zinic is the raw material, ethylene glycol monomethyl ether is dissolvent, organic amine salt is chelant to produce stable ZnO peptizate van; dipping method or rotating coating method is used to deposit the ZnO peptizate van to glass chip evenly, it is then heat treated to form transparent ZnO seed crystal layer to evoked the growth of following ZnO nanometer column array; ZnO nanometer column growth liquid can be produced by zinic, water and hexamethylene tetramine; the basal piece covered with ZnO seed crystal layer is inserted into the ZnO nanometer column growth liquid, and then pretreated by ultrasound at room temperature, and warmed up to 95DEG C and heat preservation for 6 hours. After the reaction, the basal piece is washed with deionized water, and dried naturally; the regular one-dimensional ZnO nanometer column array is gained. The diameter of the ZnO nanometer column array is decreased under 100nm, and the perpendicularity of growth is guaranteed.

Description

technical field [0001] The invention relates to a method for preparing a zinc oxide (ZnO) highly oriented nanocolumn array, more specifically, to an ultrasonic-assisted aqueous solution preparation method for a highly oriented zinc oxide nanocolumn array. The invention belongs to the technical field of low-dimensional nanomaterial thin films. Background technique [0002] ZnO is a typical direct bandgap wide bandgap semiconductor material with a bandgap width of 3.37eV at room temperature and has luminescent properties from blue to ultraviolet. Its exciton binding energy at room temperature is as high as 60meV, and higher optical gain can be obtained by making light-emitting devices, which makes zinc oxide have great potential application value in greatly improving the optical storage density. Therefore, in recent years, the research on the preparation and growth mechanism of high-quality ZnO thin films and low-dimensional nanostructures, especially ZnO nanowires and nanoco...

Claims

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Application Information

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IPC IPC(8): H01L21/368C30B29/16C30B29/62C01G9/02B82B3/00
Inventor 李效民邱健军于伟东高相东
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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