Organosilicon electronic encapsulation material

A potting material and silicone technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of poor mechanical properties of cured products, unsuitable for electronic potting, etc., to achieve effective packaging, prolong service life, and make The effect of simple craftsmanship and flow

Inactive Publication Date: 2007-08-15
东莞市贝特利新材料有限公司
View PDF1 Cites 34 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Compositions formulated with vinyl-terminated polymethylphenylsiloxane, polymethylhydrogenphenylsiloxane, platinum catalyst and inhibitor have been reported [CN1009938B], but similar compositions are used for electronic filling The seal has not been reported yet; and the above invention patent still has the following disadvantages for electronic potting: 1. The inhibitor used is modified by organosilicon and has a high boiling point, which is very beneficial to storage and operation time, but The obtained product needs to be cured at a very high temperature (above 400°C), which is not suitable for electronic potting at all; 2. There is no reinforcing material in the composition, and the obtained cured product has poor mechanical properties and is not suitable for electronic potting. seal up

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organosilicon electronic encapsulation material
  • Organosilicon electronic encapsulation material
  • Organosilicon electronic encapsulation material

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0033] Get a clean 500ml three-necked bottle, add octamethylcyclotetrasiloxane 100g therein, octaphenylcyclotetrasiloxane 50g, and the structural formula is (CH 2 =CH)(CH 3 ) 2 SiOSi (CH 3 ) 2 (CH=CH 2 ) end-capping agent 2g, potassium siloxanate catalyst 0.1g, after stirring and reacting at 160~180°C for 8 hours, add (Me 3 SiO) 2 OHP=O to neutralize until it is neutral, then remove low boilers under vacuum; cool to room temperature, and filter to obtain colorless and transparent vinyl-terminated polymethylphenylsiloxane with a viscosity of 1100mpa· S (25°C).

[0034] Take 100g of the above-mentioned vinyl-terminated polymethylphenylsiloxane, and then take 10g of polymethylhydrophenylsiloxane with a viscosity of 100mpa S (25°C), and a viscosity of 800mpa S (25°C). 20g silicone resin, 0.2g platinum catalyst coordinated by methylvinylsiloxane, 0.15g methylpentynol, stir evenly, remove foam, pour into a mold of 2mm×13mm×13mm, and bake at 150°C Bake for 1 hour to form into...

example 2

[0036] Get a clean 500ml three-necked bottle, add octamethylcyclotetrasiloxane 100g therein, octaphenylcyclotetrasiloxane 100g, and the structural formula is (CH 2 =CH)(CH 3 ) 2 SiOSi (CH 3 ) 2 OSi(CH 3 ) 2 (CH=CH 2 ) end-capping agent 2g, potassium siloxanate catalyst 0.1g, after stirring and reacting at 160~180°C for 8 hours, add (Me 3 SiO)(OH) 2 P=O neutralization until neutrality, remove the low boilers under vacuum; cool to room temperature, filter to obtain colorless and transparent vinyl-terminated polymethylbenzene with a viscosity of 1300mpa·S (25°C) base siloxane.

[0037] Take 100g of the above-mentioned vinyl-terminated polymethylphenylsiloxane, then take 15g of polymethylhydrophenylsiloxane with a viscosity of 100mpa S (25°C), and vinyl with a viscosity of 600mpa S (25°C). 30g of methyl silicone resin, 0.3g of tetrahydrofuran-coordinated platinum catalyst, 0.15g of methyl pentynol, stir evenly, defoam, pour into a mold of 2mmx13mmx13mm, bake at 150°C for ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
viscosityaaaaaaaaaa
transmittivityaaaaaaaaaa
refractive indexaaaaaaaaaa
Login to view more

Abstract

The invention discloses a organic silicon embedding material in embedding technical domain of electronic product, which is characterized by the following: It is composed by 100 wt ethenyl dead-end polymethyl phenyl group phenyl group oxosilane, 10-30 wt ethenyl metyl group silicon resin, 5-20 wt poly metyl group hydrogen phenyl group, 0.1-2 wt accelerant and 0.05-2 wt blocking agent, which is based on ethenyl dead-end polymethyl phenyl group phenyl group oxosilane. The light transmittance ratio of this material can reach 99% and refractive index can reach 1.49-1.53, which is fit for packaging of LED electronic product.

Description

Technical field: [0001] The invention relates to the technical field of potting and sealing of electronic products, in particular to an organic silicon electronic potting material. Background technique: [0002] Since the development of electronic potting, great progress has been made. At present, the more general electronic potting materials are mainly composed of epoxy resin or polyurethane resin, curing agent, accelerator, toughening agent, filler, thixotropic agent, etc., but The development of packaging technology using epoxy resin as a raw material faces many difficulties, such as heat resistance, moisture resistance, and internal stress. For example, poor heat resistance is an extremely unfavorable factor for LED packaging. It is easy to damage the components and shorten the service life. Similarly, the moisture resistance is low, and moisture enters the interior of the components, which is easy to cause short circuits and burn out the components. In addition, becaus...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/10C08L83/05H01L23/29
Inventor 苏俊柳汤胜山李家忠
Owner 东莞市贝特利新材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products