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Near-infrared high-transmission rate non-crystal transparent conductive oxide film and its making method

An oxide thin film, transparent conductive technology, which is applied in the manufacture of oxide conductors, non-metallic conductors, cables/conductors, etc., can solve the problems of reduced electrical conductivity and achieve low resistivity, uniform film, and good process stability.

Inactive Publication Date: 2008-01-09
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] One of the effective ways to improve the transparency of transparent conductive films is to reduce the carrier concentration of the film, but it usually leads to a decrease in conductivity.

Method used

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  • Near-infrared high-transmission rate non-crystal transparent conductive oxide film and its making method
  • Near-infrared high-transmission rate non-crystal transparent conductive oxide film and its making method

Examples

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Embodiment 1

[0021] Example 1, preparation of molybdenum-doped indium oxide target: In metal with a purity of 99.99% is melted into a target, and 2 wt% of molybdenum wire with the same purity of 99.99% is uniformly and symmetrically embedded. The target diameter is 51mm and the thickness is 3.0mm . The substrate is a common glass slide, which has been washed by pure water, alcohol and acetone ultrasonic waves for 15 minutes each.

[0022] Substrate temperature: room temperature. The distance between the target and the substrate was fixed at 50mm. Before film deposition, the reaction chamber was evacuated to less than 2×10 -3 Pa, then the O through the variable air pilot valve 2 And Ar gas into the reaction chamber. The working pressure in the reaction chamber is 2.5×10 -1 Pa, sputtering current is 100mA, sputtering voltage is 350V, control O 2 The partial pressure of the reaction gas is 3.8×10 -2 Pa. Thin films were prepared on ordinary glass slides. The sputtering time is 10 minu...

Embodiment 2

[0023] Example 2, preparation of tungsten-doped indium oxide target: In metal with a purity of 99.99% is melted into a target, and 2 wt% of tungsten wire with the same purity of 99.99% is evenly and symmetrically embedded, and the target diameter is 51mm and the thickness is 3.0mm . The substrate is a common glass slide, which has been washed by pure water, alcohol and acetone ultrasonic waves for 15 minutes each.

[0024] Substrate temperature: room temperature. The distance between the target and the substrate was fixed at 50mm. Before film deposition, the reaction chamber was evacuated to less than 2×10 -3 Pa, then the O through the variable air pilot valve 2 And Ar gas into the reaction chamber. The working pressure in the reaction chamber is 3.0×10 -1 Pa, sputtering current is 150mA, sputtering voltage is 385V, control O 2 The partial pressure of the reaction gas is 3.5×10 -2 Pa. Thin films were prepared on ordinary glass slides. The sputtering time is 8 minutes,...

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Abstract

The invention is concerned with the near infrared high transmissivity non-crystal transparent electrode guiding oxide thing film and the making method. It belongs to the transparent electricity guiding film technique. The electricity guiding film mixes with the oxidant indium In2O3:M(M=Mo, W). The invention uses the normal glass as the basal board , the studded target made of the indium metal mixing into molybdenum or tungstenic, and applies the responsive direct current magnetron sputtering technique under the condition of the basal board temperature equals room temperature, and also, under the appropriate state for the sputtering pressure, the oxygen partial pressure, the sputtering current, and the sputtering voltage to achieve the non-crystal structure In2O3:M film. The film is with low resistivity, higher carrier mobility, higher transmissivity in visible light, and especially higher transmissivity in near infrared and so on characteristic of photo-electricity. It can be use widely in the flexibility solar battery field and the near infrared sensor field and so on.

Description

technical field [0001] The invention belongs to the technical field of transparent conductive films, and in particular relates to an amorphous transparent conductive oxide film and a preparation method thereof. Background technique [0002] In the past few decades, transparent conductive oxide (TCO) thin films have been widely used in optoelectronic fields such as flat panel display devices and solar cells due to their unique properties of transparency in the visible light range and good electrical conductivity. more people's attention. At present, people are working on improving and optimizing the performance of TCO thin films through various methods including process technology, doping different elements, multi-layer film structure and multi-component, so as to adapt and develop new application fields. The most representative TCO material is In 2 o 3 : Sn(ITO), which generally has a high carrier concentration (10 21 cm -3 order of magnitude), low resistivity (10 -4 Ω...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/0224H01L31/18H01L33/00H01L21/203C23C14/35C23C14/54C23C14/06H01B1/08H01B13/00H01L33/58
CPCY02P70/50
Inventor 张群李桂锋李喜峰
Owner FUDAN UNIV
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