A growth method of silicon germanium material

Abstract

The invention discloses a production method of silicon and germanium materials. The equipment used in the invention is a device for growing SiGe material with SiH4 as the gas source RPCVD, and replacing silicon hydride with SiH2Cl2 as the gas source so as to grow silicon and germanium extended material with the pressure-reduction chemical gas-phase sedimentation method. Gases used in the growth include H2, N2, SiH2Cl2, GeH4, PH3, and B2H6, growth temperature 700-900 DEG C, and working pressure 60-100Torr. Since the exhausted gas generated in the production process of the invention does not contain silicon hydride, the gas can be treated in water with the hydrolytic method directly. Therefore, structure of the exhausted gas processor of production equipment can be extremely simple, and cost of exhaust gas treatment can be low relatively.

Description

Technical field [0001] The invention relates to a method for manufacturing an electronic device, in particular to a method for manufacturing silicon germanium materials. Background technique [0002] SiGe / Si heterojunction film material is a new energy band engineering technology and a new generation of silicon-based materials. The forbidden band width and lattice constant can be adjusted easily by changing the Ge (germanium) composition. The heat dissipation performance of SiGe (silicon, germanium) material is better than that of GaAs (gallium arsenide), the microwave performance is similar to that of GaAs, and the process is compatible with mature silicon component manufacturing processes. Therefore, SiGe materials have very broad application prospects in the production of microelectronics and optoelectronic devices. [0003] The main methods for growing silicon germanium heterojunction materials include MBE (Molecular Beam Epitaxy), SEG (Selective Epitaxy), UHV / CVD (UHV / CVD) U...

AI Technical Summary

Problems solved by technology

[0011] Silane gas is very dangerous, it is easy to spontaneous combustion and explosion

Since it is impossible for silane to completely react and be consumed in the furnace, a lot of waste gas containing silane will be produced during the production process, and these waste gases containing silane may explode at any time; and because the waste gas also contains harmful substances such as HCl, these waste gases very difficult to handle

At present, RPCVD using silane as the growth gas mostly adopts combustion-type waste gas treatment methods. The waste gas processor has a complex structure and high consumption.

Therefore, using silane as a growth gas is dangerous and costly

[0012] In addition, H 2 The purity of the carrier gas needs to be greater than 99.999999%, so that the H 2 Increased difficulty and cost of manufacture

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