A growth method of silicon germanium material

A growth method and technology of silicon germanium, applied in the field of manufacturing silicon germanium materials, can solve the problems of increased difficulty and cost, high consumption, dangerous cost, etc., and achieve the effects of low surface roughness, high production efficiency, and fast growth rate

Inactive Publication Date: 2008-01-16
HEBEI POSHING ELECTRONICS TECH
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Problems solved by technology

[0011] Silane gas is very dangerous, it is easy to spontaneous combustion and explosion
Since it is impossible for silane to completely react and be consumed in the furnace, a lot of waste gas containing silane will be produced during the production process, and these waste gases containing silane may explode at any time; and because the waste gas also contains harmful substances such as HCl, these waste gases very difficult to handle
At present, RPCVD using silane as the growth gas mostly adopts combustion-type waste gas treatment methods. The waste gas processor has a complex structure and high consumption.
Therefore, using silane as a growth gas is dangerous and costly
[0012] In addition, H 2 The purity of the carrier gas needs to be greater than 99.999999%, so that the H 2 Increased difficulty and cost of manufacture

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  • A growth method of silicon germanium material

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Embodiment Construction

[0025] The following is a further detailed description of the present invention by comparing the prior art methods:

[0026] Our test substrate is a heavily As-doped silicon substrate with a size of 150mm. 0.85 Ge 0.15 The epitaxial layer grows in the crystal direction of the substrate; SiH is used as the gas source 4 And DCS as growth gas. The equipment used is a RPCVD deposition system, the length of the heating zone of the equipment is 200mm, and the system leakage rate is less than 10mTorr / min.

[0027] Use SiH 4 The growth process for gas source is the existing process: its working atmosphere includes H 2 , N 2 , SiH 4 , GeH 4 , PH 3 , B 2 H 6 , Where H 2 The purity is greater than 99.999999%; H 2 The flow rate is 50L / min; the growth temperature is 520℃, and the pressure is 50 Torr.

[0028] The process parameters of using DCS as a gas source are: the atmosphere used for growth includes H 2 , N 2 , SiH 2 Cl 2 , GeH 4 , PH 3 , B 2 H 6 ; H 2 The flow rate is 40L / min; where H 2...

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Abstract

The invention discloses a production method of silicon and germanium materials. The equipment used in the invention is a device for growing SiGe material with SiH4 as the gas source RPCVD, and replacing silicon hydride with SiH2Cl2 as the gas source so as to grow silicon and germanium extended material with the pressure-reduction chemical gas-phase sedimentation method. Gases used in the growth include H2, N2, SiH2Cl2, GeH4, PH3, and B2H6, growth temperature 700-900 DEG C, and working pressure 60-100Torr. Since the exhausted gas generated in the production process of the invention does not contain silicon hydride, the gas can be treated in water with the hydrolytic method directly. Therefore, structure of the exhausted gas processor of production equipment can be extremely simple, and cost of exhaust gas treatment can be low relatively.

Description

Technical field [0001] The invention relates to a method for manufacturing an electronic device, in particular to a method for manufacturing silicon germanium materials. Background technique [0002] SiGe / Si heterojunction film material is a new energy band engineering technology and a new generation of silicon-based materials. The forbidden band width and lattice constant can be adjusted easily by changing the Ge (germanium) composition. The heat dissipation performance of SiGe (silicon, germanium) material is better than that of GaAs (gallium arsenide), the microwave performance is similar to that of GaAs, and the process is compatible with mature silicon component manufacturing processes. Therefore, SiGe materials have very broad application prospects in the production of microelectronics and optoelectronic devices. [0003] The main methods for growing silicon germanium heterojunction materials include MBE (Molecular Beam Epitaxy), SEG (Selective Epitaxy), UHV / CVD (UHV / CVD) U...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205C30B25/02
Inventor 赵丽霞袁肇耿陈秉克
Owner HEBEI POSHING ELECTRONICS TECH
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