Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for forming grounding via hole between gallium nitride device and circuit

A gallium nitride device, gallium nitride technology, applied in circuits, electrical solid state devices, semiconductor devices, etc., can solve problems such as inability to etch, achieve the effects of eliminating parasitic inductance, simple operation, and easy implementation

Inactive Publication Date: 2010-09-29
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] High-density plasma etching of GaN materials has also been widely studied. Since the plasma of fluorine-based gases reacts with GaN to generate low-volatility substances, it cannot be etched effectively, while the plasma of chlorine-based gases and nitrogen The substances generated by the reaction of gallium nitride have good volatility, thus forming the etching of GaN materials, so the etching of gallium nitride materials can only use chlorine-based gases as reactive gases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming grounding via hole between gallium nitride device and circuit
  • Method for forming grounding via hole between gallium nitride device and circuit
  • Method for forming grounding via hole between gallium nitride device and circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] figure 1 Shown in the present invention is the aluminum gallium nitride / gallium nitride heterojunction material on the SiC substrate used to etch through holes and the devices or circuits on it (for simplicity, only one electrode is drawn) A cross-sectional view, which includes a SiC substrate 11 having a surface 12 and a surface 13, a gallium nitride buffer layer 14 on the surface 13 of the SiC substrate, and an aluminum gallium nitride barrier layer 15 and a barrier layer 15 formed thereon 上Formed electrode 16. The substrate 11 is generally 300-500 μm, the thickness of the gallium nitride buffer layer 14 is generally 1 to 3 μm, and the thickness of the aluminum gallium nitride barrier layer 15 is 15-30 nm.

[0050] figure 1 The surface of the epitaxial layer and the electrode 16 are coated with polymer 19, such as Figure 3a As shown in the figure, the role of polymer 19 is on the one hand to protect the devices or circuits below it from being damaged in the subsequent pr...

Embodiment 2

[0063] reference Figure 3a-3b First, the surface of the substrate 11 is coated with a polymer 19 to protect the devices or circuits on it, and then it is mounted upside down on the platen 21 and filled with an adhesive 20, and then the substrate 11 is thinned to Between 50 and 100 μm, the specific implementation of this process is the same as in Example 1, and will not be detailed here.

[0064] After the substrate 11 is thinned, a metal photoetching mark is made thereon, and the role of the photoetching mark is to facilitate photolithography alignment in subsequent processes. The preferred photolithography mark formation process in this embodiment includes coating photoresist on the surface 12 of the substrate 11, exposing and developing the photoresist on the mask with ultraviolet light. The marking pattern is transferred to the photoresist, and then the Ti / Au is evaporated by electron beam and peeled off to form a photolithography mark on the surface 12 of the substrate 11.

...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a process for forming gallium nitride device and ground through-hole in circuit, which comprises the following steps including (a) coating polymeric substance on the surface of epitaxy material of heterojunction of gallium aluminum nitride / gallium nitride, (b) installing the surface coated polymeric substance on a pressing disc, (c) ball milling, polishing and catching thesurface 12 of an underlay, (d) coating a thickness of mask layer on the surface of the underlay, a trompil with precalculated position is arranged in the mask layer 23, (e) etching the underlay to obtain the through hole by employing jigger coupling plasmas of fluoride group gas, (f) reserving the mask layer, etching to form ground through-hole of the electrode by the jigger coupling plasmas of fluoride group gas and (g) removing the mask layer, metalizing the surface of the through-hole and underlay and finally realizing the ground connection of the electrode. The invention saves using ground lead, eradicates the unwilled stray inductance capable lead in micro frequency, further, the operation is simple, which is easy to realize in technique.

Description

Technical field [0001] The present invention relates to a method for forming grounding through holes in semiconductor devices and circuits, and in particular to a method for forming gallium nitride devices and grounding through holes in circuits on a silicon carbide substrate. Background technique [0002] At present, the use of semiconductor solid-state devices in microwave systems can effectively reduce system volume and improve reliability. With the development of science and technology, various microwave application systems urgently need electronic devices suitable for high temperature, high frequency, high power, and radiation resistance. Electronic devices based on traditional semiconductors such as Si and GaAs have output power density, high temperature resistance and radiation resistance. All aspects are greatly restricted, so it is necessary to find new semiconductor materials to replace Si and GaAs. Gallium nitride (GaN) is a new wide band gap semiconductor material, w...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/60
CPCH01L2924/0002H01L21/76898H01L2924/00
Inventor 任春江陈堂胜焦刚陈辰
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com