Method for forming grounding via hole between gallium nitride device and circuit

A gallium nitride device, gallium nitride technology, applied in circuits, electrical solid state devices, semiconductor devices, etc., can solve problems such as inability to etch, achieve the effects of eliminating parasitic inductance, simple operation, and easy implementation
CN101226891BInactive Publication Date: 2010-09-29NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
Publication Date
2010-09-29
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a process for forming gallium nitride device and ground through-hole in circuit, which comprises the following steps including (a) coating polymeric substance on the surface of epitaxy material of heterojunction of gallium aluminum nitride / gallium nitride, (b) installing the surface coated polymeric substance on a pressing disc, (c) ball milling, polishing and catching thesurface 12 of an underlay, (d) coating a thickness of mask layer on the surface of the underlay, a trompil with precalculated position is arranged in the mask layer 23, (e) etching the underlay to obtain the through hole by employing jigger coupling plasmas of fluoride group gas, (f) reserving the mask layer, etching to form ground through-hole of the electrode by the jigger coupling plasmas of fluoride group gas and (g) removing the mask layer, metalizing the surface of the through-hole and underlay and finally realizing the ground connection of the electrode. The invention saves using ground lead, eradicates the unwilled stray inductance capable lead in micro frequency, further, the operation is simple, which is easy to realize in technique.
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Description

Technical field

[0001] The present invention relates to a method for forming grounding through holes in semiconductor devices and circuits, and in particular to a method for forming gallium nitride devices and grounding through holes in circuits on a silicon carbide substrate. Background technique

[0002] At present, the use of semiconductor solid-state devices in microwave systems can effectively reduce system volume and improve reliability. With the development of science and technology, various microwave application systems urgently need electronic devices suitable for high temperature, high frequency, high power, and radiation resistance. Electronic devices based on traditional semiconductors such as Si and GaAs have output power density, high temperature resistance and radiation resistance. All aspects are greatly restricted, so it is necessary to find new semiconductor materials to replace Si and GaAs. Gallium nitride (GaN) is a new wide band gap semiconductor material, w...

Claims

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