Check patentability & draft patents in minutes with Patsnap Eureka AI!

Method for locating growth quantum point with silicon dioxide as mask

A technology of silicon dioxide and quantum dots, applied in the field of semiconductors, can solve the problem of poor positioning and growth of quantum dots and other problems

Inactive Publication Date: 2008-12-03
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these methods do not work well for positioning and growing quantum dots, but the positioning and growth of quantum dots on the substrate is still a complicated process, and it is necessary to provide an effective method to realize the selective positioning of quantum dots.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for locating growth quantum point with silicon dioxide as mask
  • Method for locating growth quantum point with silicon dioxide as mask

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below with reference to the accompanying drawings.

[0020] see figure 1 and figure 2 As shown, the present invention uses silicon dioxide as a mask to position and grow quantum dots, including:

[0021] (1) Firstly, a silicon dioxide layer 20 of about 50 nm is vapor-deposited on the semi-insulating planar GaAs substrate 10 by plasma-enhanced chemical vapor deposition (PECVD). The purpose of vapor-depositing the silicon dioxide layer 20 is to provide a mask for positioning and growing quantum dots, and the purpose of vapor-depositing the silicon dioxide layer 20 by PECVD technology is to obtain a flat mask.

[0022] (2) Coat the photoresist layer 30 on the GaAs substrate 10 deposited with the silicon dioxide layer 20 , and engrave circular holes with a diameter of about 90 nm and a center-to-center distance of abou...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for positioning and growing quantum dots by taking silicon dioxide as a shadow mask and is characterized in that, the method comprises the following preparation steps: step 1: a substrate is selected, and a silicon dioxide layer is evaporated on the substrate; step 2: a layer of photoresist is coated on the silicon dioxide layer, and a needed pattern structure is formed on the photoresist by electron beam lithography; step 3: a sample is carried out the dry etching, and the needed pattern structure is transferred to the surface of the silicon dioxide layer; step 4: the sample is carried out the photoresist removal treatment and the cleaning treatment; step 5: the processed sample is arranged in a growth chamber for growing GaAs material; step 6: the sample after the growth adopts hydrofluoric acid solution for corrosion, thus removing the residual silicon dioxide layer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and is a growth technology for quantum dot materials, in particular to a method for positioning and growing quantum dots using silicon dioxide as a mask. Background technique [0002] In the field of semiconductor materials, quantum dots have many unique optical and electrical properties, such as sharper light absorption, light gain and light reflection spectrum, increased binding energy of excitons and impurities, quantum interference effect, quantum tunneling effect and Coulomb Blocking effect (Columbblaskade) and so on. These properties make quantum dots have great application potential in the field of optoelectronics and microelectronics, such as the development of quantum dot lasers with lower threshold, higher efficiency and better thermal stability, and higher speed microelectronic devices (HEMT, FET) and single-electron memory devices. In the preparation of quantum dot materials,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/20H01L21/203H01L33/00H01S5/30
Inventor 任芸芸徐波周惠英刘明李志刚王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com