Ferroelectric thin-membrane phase shifter and preparation thereof

A technology of ferroelectric thin film and manufacturing method, which is applied in the direction of circuits, electrical components, waveguide devices, etc., and can solve the problems of weak modulation electric field, weak modulation ability of ferroelectric capacitance, and inability to fully utilize the modulation ability of barium strontium titanate thin film

Inactive Publication Date: 2008-12-31
HENAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the structure itself has a large fringe capacitance, which cannot make full use of the modulation capability of the barium strontium titanate film. Usually, the interdigital spacing of

Method used

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  • Ferroelectric thin-membrane phase shifter and preparation thereof
  • Ferroelectric thin-membrane phase shifter and preparation thereof
  • Ferroelectric thin-membrane phase shifter and preparation thereof

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Embodiment Construction

[0025] refer to figure 1 , 2 , 3, 4, the manufacturing process of the phase shifter with the new interdigitated capacitor structure periodically loaded by the coplanar line is as follows: (1) deposit the conductive thin film material 2 on the substrate substrate 1; (2) after the photolithography mask, Argon ion etching or wet etching to form a coplanar line structure (transmission line 21 and ground plane 22) and a periodically loaded interdigitated capacitance structure 33; (3) depositing a micron-scale ferroelectric film in the interdigitated capacitance region 3. Form a phase shifter with a new interdigitated capacitor structure periodically loaded by coplanar lines, and the loading capacitor is a new interdigitated capacitor. That is, a new type of interdigitated capacitor is periodically loaded on the coplanar lines. Compared with the manufacturing process of the phase shifter with parallel plate structure capacitor periodically loaded coplanar line, the manufacturing p...

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Abstract

The invention relates to a ferro-electricity film phase shifter, pertaining to the field of microwave engineering technology, which comprises a coplanar line structure that comprises a transmission line constituted by a general conductive film and ground planes on both sides thereof. Aequilate slots are arranged between the ground planes and the transmission line, interdigited capacitor structures are arranged mutually and periodically on the transmission line and the ground planes on both sides thereof, the conductive film is directly fixed on to the substrate of an underlay, and ferro-electricity films are provided in the slots between the mutually interdigited transmission line and the ground planes. The intedigited capacitor structure of the invention places equal attention to advantages of simple manufacturing technology of a general intedigited capacitor and to that a parallel plate capacitor structure can highly concentrate impressed electric field into the ferro-electricity film, thus realizing the advantage of large phase shifting capacity under low voltage and having potential and broad practical prospect.

Description

technical field [0001] The invention relates to a novel ferroelectric thin film phase shifter, and also relates to a manufacturing method of the ferroelectric thin film phase shifter, which belongs to the technical field of microwave engineering. Background technique [0002] Phased array antennas are widely used in radar and communication systems. In a high-precision phased array antenna, the cost of making a phase shifter accounts for about 40% of the cost of the entire phased array antenna. So far, the most studied phase shifters are those based on ferrite materials or semiconductor devices. Phased array antennas based on ferrite materials are large in size and consume a lot of power, and the response of the beam to the control signal is relatively slow. Therefore, there are obvious deficiencies in the application fields requiring fast scanning. Although the phased array antenna designed and manufactured by semiconductor devices can meet the requirements of fast scanni...

Claims

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Application Information

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IPC IPC(8): H01P1/19H01P1/18
Inventor 孟庆端马建伟孙立功田葳周鲁英刘跃敏普杰信
Owner HENAN UNIV OF SCI & TECH
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