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Method for manufacturing silicon single crystal wafer

A manufacturing method and technology of single crystal silicon, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve problems such as low component characteristics

Inactive Publication Date: 2009-02-04
SHIN-ETSU HANDOTAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, even if a wafer whose radial direction is entirely composed of N regions is used as a material, the wafer after RTP processing may have low device characteristics.

Method used

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  • Method for manufacturing silicon single crystal wafer
  • Method for manufacturing silicon single crystal wafer
  • Method for manufacturing silicon single crystal wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0093] Embodiment 1, comparative example 1

[0094] Using the same single crystal pulling device as conventionally used, growth of silicon single crystal wafers was performed by continuously reducing the pulling speed from 0.7 mm / min to 0.5 mm / min while controlling the diameter to 210 mm.

[0095] In this case, the defect distribution of the cross-section of the ingot parallel to the pulling axis is as figure 1 shown.

[0096] Therefore, using the single crystal pulling device in the same hot zone, the pulling speed is 0.595mm / min ( figure 1 A-A position) mode, pulling the monocrystalline silicon ingot while controlling it, to prepare the wafer cut out in the radial direction. The defect distribution of this wafer is as follows figure 2 As shown in (a), the entire surface (the entire surface) is an Nv region (hereinafter referred to as an Nv wafer).

[0097] Again, with the pulling speed as 0.57mm / min ( figure 1 B-B position) mode, pulling the monocrystalline silicon ing...

Embodiment 2

[0117] Embodiment 2, comparative example 2

[0118] Next, use the single crystal pulling device in the same hot zone as the pulling device used in Example 1, with a pulling speed of 0.595 mm / min ( figure 1 The A-A position) method, while controlling and pulling the monocrystalline silicon ingot, to prepare the Nv wafer cut out in the radial direction, for the Nv wafer, in the NH 3 In a mixed environment with a flow rate of 0.5L / min and an Ar flow rate of 4L / min, the temperature was rapidly raised from room temperature at a heating rate of 50°C / s, kept at 1200°C for 10 seconds, and then rapidly cooled at a cooling rate of 50°C / s. After that, at N 2 Under ambient conditions, heat treatment was performed by changing the heat treatment temperature (700°C, 800°C, 900°C) and heat treatment time (10 minutes, 30 minutes, 60 minutes), and then the oxide film withstand voltage was measured for each wafer.

[0119] As a result, in Figure 7 , and Table 2 show the relationship between ...

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Abstract

The present invention provides a method for manufacturing a silicon single crystal wafer by which a silicon single crystal ingot is pulled based on a Czochralski method and a rapid thermal annealing is performed with respect to a wafer that is sliced out from the silicon single crystal ingot and has a whole area in a radial direction formed of N region, wherein a heat treatment at 800 to 1100 DEG C as a heat treatment temperature for two hours or below as a hear treatment time is carried out after the rapid thermal annealing while adjusting the heat treatment temperature and the heat treatment time so that at least diffusion distances of vacancies as point defects injected by the rapid thermal annealing become longer than diffusion distances of the vacancies by a heat treatment performed at 800 DEG C for 30 minutes, thereby annihilating a vacancy type defect.; As a result, there is provided the manufacturing method capable of inexpensively manufacturing a silicon wafer that can assure a DZ layer with a sufficient thickness in a wafer front surface layer region and can also assure a sufficient quantity of oxide precipitates functioning as gettering sites in a bulk region on an earlier stage of a heat treatment in a device process.

Description

technical field [0001] The present invention relates to a manufacturing method of a single crystal silicon wafer. From the surface of the wafer to a certain depth which becomes the active region (active region) of the component, a DZ layer without crystal defects is formed, and the inside of the wafer can be formed Oxygen precipitates at the gettering site (gettering site). Background technique [0002] The silicon single crystal wafer that becomes the material of semiconductor components can generally be grown by the Czochralski method (Czochralski Method, hereinafter also referred to as the CZ method), and then the obtained silicon single crystal is subjected to cutting, grinding, etc. made by steps. [0003] When a silicon single crystal grown by the CZ method is subjected to a thermal oxidation treatment (for example, 1100° C. for 2 hours), oxidation-induced stacking faults called OSFs that occur in rings are formed. In addition to OSF, there are also microscopic defec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/322C30B33/02C30B29/06
CPCC30B33/02C30B15/04C30B29/06C30B15/203H01L21/3225H01L21/20
Inventor 江原幸治
Owner SHIN-ETSU HANDOTAI CO LTD
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