Solid electrolyte silver germanium oxygen thin film and preparation method and use thereof

A solid electrolyte and thin film technology, applied in the field of microelectronic materials, can solve problems such as complex structure, writing and reading rely on mechanical movement, and difficult to further increase recording density

Inactive Publication Date: 2009-02-18
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional non-volatile memory is mainly magnetic memory, and its main disadvantage is that writing and reading must rely on mechanically moving parts such as magnetic heads, so the access speed is very low and the volume is large, and the recording density is difficult to further increase
In recent years, people have developed magnetic random access memory (M-RAM) relying on spintronic materials. It needs to introduce a magnetic field in the process of reading and writing, and its structure is complex. It has not yet been put into the market.

Method used

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  • Solid electrolyte silver germanium oxygen thin film and preparation method and use thereof
  • Solid electrolyte silver germanium oxygen thin film and preparation method and use thereof
  • Solid electrolyte silver germanium oxygen thin film and preparation method and use thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0047] The preparation method of the solid electrolyte film Ag-Ge-O, the preparation steps are as follows:

[0048] a) Ag-Ge-O ceramic target 4 is made of Ag 2 O, GeO 2 Powder mixed solid phase sintering preparation; Ag 2 O, GeO 2 The powders are uniformly mixed at a molar ratio of 1:1, ball milled for 12 hours, then sintered at 600°C, and cooled to make Ag-Ge-O ceramic target 4;

[0049] b) Fix the Ag-Ge-O ceramic target 4 in the pulsed laser deposition film forming system (e.g. figure 1 (Shown) on the target stage 5, the substrate 1 is fixed on the substrate stage 8, and they are all placed in the growth chamber 6 of the pulsed laser deposition film forming system;

[0050] c) Use a vacuum pump to vacuum the growth chamber 6 to 1.0×10 through the interface valve 7 of the mechanical pump and the molecular pump -3 Pa below;

[0051] d) Use KrF excimer laser 2, wavelength 248nm, pulse width 30ns, single pulse energy 300mJ, energy density 2.0J / cm 2 , Start the laser, make the laser...

Embodiment 2

[0054] The preparation method of the non-volatile phase change memory element using the solid electrolyte film Ag-Ge-O, the specific preparation steps are as follows:

[0055] 1) The non-reactive electrode film 10 is deposited on the silicon wafer substrate 9 by a DC magnetron sputtering method, the material of which is platinum, and the thickness of the non-reactive electrode film 10 is 1 micron;

[0056] 2) Depositing an insulating layer 11 on the non-reactive electrode film 10 by using a radio frequency magnetron sputtering method, the material of the insulating layer is silicon dioxide, and its thickness is 120 nanometers;

[0057] 3) Cover the substrate with a metal mask engraved with a hole of 0.2mm in diameter, and process a micro hole with a diameter of 300 nanometers in the insulating layer 11 by focused ion beam etching, exposing the lower non-reactive electrode film 10;

[0058] 4) Put the substrate covered with the mask into the pulsed laser deposition chamber, and use...

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Abstract

This invention discloses a solid electrolyte argentums germanium oxygen film of new memory material, whose formula is AgxGeyO1-x-y, Ag-Ge-O film for short. The non-volatile memory made from this film can be used for information storage and integral circuits of other sorts. The manufacturing method of solid electrolyte film Ag-Ge-O of this invention is to roast powders of Ag2O and GeO2 with proper proportion so as to prepare the ceramic target, and then use the deposition method of laser impulse to prepare the solid electrolyte film. The solid electrolyte Ag-Ge-O film following characteristics: the main body is the material of solid electrolyte film, which has ion conductibility, can be reversibly converted to the electronic conductibility under a certain condition and used for manufacturing the non-volatile memory with small size, high intensity and steady property.

Description

Technical field [0001] The invention belongs to the field of microelectronic materials, and specifically relates to a solid electrolyte silver germanium oxide (Ag-Ge-O for short) film used for preparing fast read-write high-density non-volatile phase change memory elements and a preparation method thereof. Background technique [0002] At present, the rapid development of information technology depends on fast and large-capacity non-volatile memory, which means that the original data can be completely saved when there is no power support, so it is widely used for data storage in electronic systems, such as computers and digital Equipment, industrial control equipment, etc. The traditional non-volatile memory is mainly a magnetic memory. Its main disadvantage is that writing and reading rely on mechanically moving parts such as magnetic heads. Therefore, the access speed is very low and the volume is large, and the recording density is difficult to further increase. In recent year...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G11C16/02G11C13/02C23C14/28C23C14/02
Inventor 国洪轩闫小兵高立刚殷江刘治国
Owner NANJING UNIV
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