Preparation of super-hydrophobic transparent silicon dioxide film

A silicon dioxide and super-hydrophobic technology, applied in electrolytic coating, electrophoretic coating, electrophoretic coating, etc., can solve the problem of insufficient contact angle, achieve low film forming temperature, controllable deposited film thickness, and low energy consumption

Inactive Publication Date: 2009-04-15
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

G Gu et al. (ApplPhys, 2006, A83: 131-132) used a dip-coating process to immerse a glass substrate in a silica colloidal solution with a particle size of about 50 nm to pre

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] (1) Mix 0.5g of silicon dioxide particles with a particle size of 50nm and 100ml of absolute ethanol for 2 hours, add concentrated ammonia water dropwise during the stirring process to adjust the pH value of the solution to 9, and prepare a concentration of 5g / l colloidal solution, after ultrasonic dispersion for 30 minutes, obtain silica colloidal electrophoresis liquid;

[0020] (2) Put two clean indium tin oxide (ITO) conductive glasses into the colloidal colloidal electrophoretic fluid in parallel, the conductive surfaces of the conductive glasses are parallel to each other at a distance of 0.5cm; keep the current intensity between the conductive glasses at 2mA , deposition time 20s. After the deposition is finished, rinse and dry the conductive glass on which the silicon dioxide film has been deposited, that is, the silicon dioxide film conductive substrate; the size of the two indium tin oxide (ITO) conductive glasses is 1 cm × 2 cm;

[0021] (3) After heat-treat...

Embodiment 2

[0025] (1) Mix 0.8g of silicon dioxide particles with a particle diameter of about 98nm and 100ml of absolute ethanol for 3 hours, add concentrated ammonia water dropwise during the stirring process to adjust the pH value of the solution to 10, and prepare a concentration of 8g / The colloidal solution of 1, after ultrasonic dispersion for 30 minutes, obtains silica colloidal electrophoresis liquid;

[0026] (2) Put two clean electrodes into the colloidal silica gel electrophoretic fluid in parallel, wherein the cathode is conductive glass, the anode is PET / ITO flexible conductive substrate, and the parallel relative distance between the conductive surfaces of the two electrodes is 1.5cm; keep The current intensity between the two electrodes was 10mA, and the deposition time was 30s. After the deposition is completed, rinse and dry the conductive glass on which the silicon dioxide film has been deposited, that is, the silicon dioxide film conductive substrate; the size of the c...

Embodiment 3

[0031] (1) Mix 1.0g of silica particles with a particle diameter of about 120nm and 100ml of isopropanol for 3 hours, add concentrated ammonia water dropwise during the stirring process to adjust the pH value of the solution to 9, and prepare a concentration of 10g / 1 colloidal solution, after ultrasonic dispersion for 45 minutes, obtain the silica colloidal electrophoresis liquid;

[0032](3) Two clean electrodes are put into the colloidal silica electrophoretic fluid in parallel, wherein the cathode is a graphite electrode, the anode is a conductive glass, and the parallel relative distance between the conductive surfaces of the two electrodes is 1.0cm; keep the distance between the two electrodes The current intensity is 15mA, and the deposition time is 15s. After the deposition is completed, rinse and dry the conductive glass on which the silicon dioxide film has been deposited, that is, the conductive substrate of the silicon dioxide film; the size of the cathode and the a...

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Abstract

The invention discloses a preparation method of a super-hydrophobic transparent silica thin film, the method mixes and stirs silica particles with alcohol solution, carries out the ultrasonic dispersion and regulates the pH value to obtain a silica colloid electrophoresis buffer; the silica colloid electrophoresis buffer is electrophoretically deposited on a clean conductive substrate, the drying is carried out after the leaching by anhydrous ethanol, thereby obtaining a silica thin film conductive substrate; the thermal treatment is carried out on the silica thin film conductive substrate at 120 to 400 DEG C for 30-60 minutes; the silica thin film conductive substrate after the thermal treatment is arranged in hydrophobic treatment liquid for immersion for 12 to 24 hours and then taken out, the drying is carried out after the leaching by the ethanol, and the super-hydrophobic transparent silica thin film is obtained. The prepared thin film material has excellent hydrophobic property and transmittance, the contact angle between water and the surface is 153 degrees to 162 degrees, and the transmittance under the wavelength of 500nm can reach 90.2 to 95.5 percent.

Description

technical field [0001] The invention relates to a method for preparing a superhydrophobic transparent silicon dioxide film, in particular to a method for preparing a superhydrophobic transparent silicon dioxide film by electrophoretic deposition, and belongs to the technical field of film materials and material surface modification. Background technique [0002] Superhydrophobic films or surfaces with a contact angle greater than 150° are of great application value in waterproof, anti-fog, self-cleaning, anti-oxidation, antibacterial, non-destructive liquid transmission, etc. Therefore, research on the hydrophobicity of various oxide film materials has attracted people Great interest. In addition to its hydrophobic properties, the hydrophobic silica film also has the characteristics of high hardness, wear resistance, good heat insulation, low dielectric constant, and good chemical stability. It is widely used in the fields of microelectronic devices, optical thin film device...

Claims

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Application Information

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IPC IPC(8): C09D1/00C09D5/44C09D5/00C25D13/02
Inventor 何新华叶常茂李茂
Owner SOUTH CHINA UNIV OF TECH
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